A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

A stacked multilayer structure according to an embodiment of the present invention comprises: a stacked layer part including a plurality of conducting layers and a plurality of insulating layers, said plurality of insulating layers being stacked alternately with each layer of said plurality of conducting layers, one of said plurality of insulating layers being a topmost layer among said plurality of conducting layers and said plurality of insulating layers; and a plurality of contacts, each contact of said plurality of contacts being formed from said topmost layer and each contact of said plurality of contacts being in contact with a respective conducting layer of said plurality of conducting layers, a side surface of each of said plurality of contacts being insulated from said plurality of conducting layers via an insulating film.

A semiconductor device includes: a substrate; a first wiring layer arranged above the substrate; a first insulating film covering the first wiring layer; a lower oxidation preventing film arranged on the first insulating film; at least one thin-film resistor arranged on the lower oxidation preventing film; an upper oxidation preventing film arranged on the at least one thin-film resistor; a second insulating film covering the lower oxidation preventing film, the at least one thin-film resistor, and the upper oxidation preventing film; a second wiring layer arranged on the second insulating film; and a third insulating film covering the second wiring layer. The first wiring layer overlaps an end portion of the at least one thin-film resistor when viewed in a normal direction of one surface of the substrate.

Embodiments of 3D memory device having channel structures with a native oxide layer and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack is formed on a substrate. The dielectric stack includes interleaved first dielectric layers and second dielectric layers on a substrate. An opening extending vertically through the dielectric stack is formed. A native oxide layer is formed along a sidewall of the opening. The native oxide layer includes native oxide of at least some of the first dielectric layers. A deposited oxide layer, a storage layer, a tunneling layer, and a semiconductor channel are subsequently formed in this order over the native oxide layer and along the sidewall of the opening. A memory stack includes interleaved conductor layers and the second dielectric layers is formed by replacing, with the conductor layers, the first dielectric layers in the dielectric stack.

Variable-resistance material memories include a buried salicide word line disposed below a diode. Variable-resistance material memories include a metal spacer spaced apart and next to the diode. Processes include the formation of one of the buried salicide word line and the metal spacer. Devices include the variable-resistance material memories and one of the buried salicided word line and the spacer word line.

Capacitor arrays and methods of operating a digital to analog converter are described. In an embodiment, a capacitor array includes a unit capacitor (Cu) structure characterized by a unit capacitance value, a plurality of different super-unit capacitor structures, and a plurality of different sub-unit capacitor structures, each different sub-unit capacitor structure having a different capacitance defined by a division of the unit capacitance value.

A memory array includes: a plurality of first wires; at least one second wire crossing the first wires; and a plurality of memory elements provided in correspondence with respective intersections of the first wires and the at least one second wire and each having a first electrode and a second electrode arranged spaced apart from each other, a third electrode connected to one of the at least one second wire, and an insulating layer that electrically insulates the first electrode and the second electrode and the third electrode from each other, the first wires, the at least one second wire, and the first wires, the at least one second wire, and the memory elements being formed on a substrate.

Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line.

A semiconductor memory device according to an embodiment includes a substrate; a plate-like first conductivity layer provided above the substrate and extending parallel to a substrate plane to bestride first and second regions; a plate-like second conductivity layer provided above the first conductivity layer to be separated from the first conductivity layer, an end portion of the first conductivity layer has a protruding staircase shape in the first region, the second conductivity layer extending parallel to the first conductivity layer to bestride the first and second regions; a first contact connected to the first conductivity layer at a side surface or a bottom surface of the first conductivity layer and extending from the first conductivity layer toward the substrate, the first contact being connected at a position where the end portion of the first conductivity layer in the first region protrudes, and a diameter size of a portion of the first contact connected at a side surface or a bottom surface of the first conductivity layer having a maximum diameter size; a second contact connected to the second conductivity layer at a side surface or a bottom surface of the second conductivity layer in the first region and extending from the second conductivity layer toward the substrate to penetrate the first conductivity layer, a diameter size of a portion of the second contact connected at a side surface or a bottom surface of the second conductivity layer having a maximum diameter size; a channel body penetrating the first and second conductivity layers in the second region; and a memory film including a charge accumulation portion provided between the first and second conductivity layers and the channel body in the second region.

A one-time programmable (OTP) memory device includes a memory array having multiple memory elements. The memory array includes a plurality of anti-fuse FinFETs and a plurality of access FinFETs. Each anti-fuse device has a first terminal for receiving a programming voltage and a second terminal. The anti-fuse FinFETs are located in a first region of an integrated circuit. At least one anti-fuse FinFET of the plurality of anti-fuse FinFETs and at least one access FinFET of the plurality of access FinFETs form a memory element of the plurality of memory elements of the memory array. Each access FinFET is configured to selectively couple one of a program inhibit voltage and a program enable voltage to the second terminal of a corresponding anti-fuse FinFET in a programming operation. The access FinFETs are located in a second region of the integrated circuit, different than the first region of the integrated circuit.