An image sensor includes an array of readout circuits in non-organic technology and photodiodes made of organic materials.

Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.

An electrical device includes a substrate with a compressive layer, a neutral stress buffer layer and a tensile stress compensation layer. The stress buffer layer and the stress compensation layer may each be formed with aluminum nitride using different processing parameters to provide a different intrinsic stress value for each layer. The aluminum nitride tensile layer is configured to counteract stresses from the compressive layer in the device to thereby control an amount of substrate bow in the device. This is useful for protecting fragile materials in the device, such as mercury cadmium telluride. The aluminum nitride stress compensation layer also can compensate for forces, such as due to CTE mismatches, to protect the fragile layer. The device may include temperature-sensitive materials, and the aluminum nitride stress compensation layer or stress buffer layer may be formed at a temperature below the thermal degradation temperature of the temperature-sensitive material.

An optical sensing apparatus is provided. The optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material, the absorption region configured to receive an optical signal and generate photo-carriers in response to receiving the optical signal; an amplification region formed in the substrate configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers carriers; a buried-dopant region formed in the substrate and separated from the absorption region, wherein the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region; and a buffer layer formed between the buried-dopant region and the absorption region, wherein the buffer layer is intrinsic and has a thickness not less than 150 nm.

An imaging system includes an imaging device having a holder configured to hold a cell culture plate with a plurality of wells. The imaging device also includes an imaging assembly having a plurality of imaging units, each of which is configured to image one well of the plurality of wells. The imaging system also includes a storage platform in communication with the imaging device configured to receive a plurality of images from the imaging device. The system further includes a computer in communication with the imaging device and the storage platform. The computer is configured to control the imaging device and to display at least one image of the plurality of images.

The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

A system includes a pixel including a diffusion layer in contact with an absorption layer. The diffusion layer and absorption layer are in contact with one another along an interface that is inside of a mesa. A trench is defined in the absorption layer surrounding the mesa. An overflow contact is seated in the trench.

Embodiments of the invention relates to a Solid-state optical receiver driver system, particularly for automotive applications, comprising at least one optical receiver channel, the optical receiver channel being connectable to a respective optical receiver, which is characterized in that the solid-state optical receiver driver system further comprises at least one test signal generation unit, for providing a test signal to the at least one optical receiver channel. The invention further relates to a method for testing a solid-state optical receiver driver system.

Methods, apparatus and systems are described that relate to uncooled long-wave infrared (LWIR) photodetectors capable of operating at room temperature and having a simple structure that can be manufactured at low cost. One example LWIR photodetector includes a layer of amorphous silicon (a-Si) disposed on a silicon substrate and a layer of amorphous germanium (a-Ge) disposed on the a-Si layer, wherein the a-Ge layer is operable to absorb infrared light and provide photoconductive gain, and the a-Si layer is operable to produce carrier multiplication via cycling excitation process.

A dam region that blocks an outflow of a resin from a chip mounting region suppresses an influence of incident light. A solid-state imaging element is provided with a pixel region in which a plurality of pixels is arranged, and a chip mounting region in which a chip is mounted. Furthermore, a dam region that blocks an outflow of a resin from the chip mounting region is arranged around the chip mounting region. Furthermore, the dam region has a saw-tooth shape toward an outer side at least partially. Furthermore, incident light is repeatedly reflected by the saw-tooth shape of the dam region to be absorbed and attenuated.