The present invention relates to an embedded printed circuit board including: an insulation substrate including a cavity; a sensor device disposed on the cavity; an insulating layer disposed on the insulation substrate, having an opening part exposing the sensor device; and a pad part disposed on the lower surface of the opening part exposing the sensor device.

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.

A first photoelectric converter according to an embodiment of the present disclosure includes: a light absorbing layer having a light incidence surface and including a compound semiconductor material; a first electrode that is provided for each of pixels to be opposed to a surface of the light absorbing layer opposite to the light incidence surface; a first semiconductor layer of a first electrical conduction type; a second semiconductor layer of a second electrical conduction type; a diffusion region of the second electrical conduction type; a groove that separates the first semiconductor layer, the second semiconductor layer, and a portion of the light absorbing layer between the adjacent pixels; a first insulating film that is continuously provided on a side wall and a bottom surface of the groove; and a light shielding film that is continuously provided from a side wall of the first semiconductor layer to a side wall of the light absorbing layer with the first insulating film interposed in between. The first semiconductor layer is provided between the light absorbing layer and the first electrode. The second semiconductor layer is provided between the first semiconductor layer and the light absorbing layer. The diffusion region is provided between the adjacent pixels across the second semiconductor layer and the light absorbing layer.

An example image sensor structure includes an image layer. The image layer includes an array of light detectors disposed therein. A device stack is disposed over the image layer. An array of light guides is disposed in the device stack. Each light guide is associated with at least one light detector of the array of light detectors. A passivation stack is disposed over the device stack. The passivation stack includes a bottom surface in direct contact with a top surface of the light guides. An array of nanowells is disposed in a top layer of the passivation stack. Each nanowell is associated with a light guide of the array of light guides. A crosstalk blocking metal structure is disposed in the passivation stack. The crosstalk blocking metal structure reduces crosstalk within the passivation stack.

An image sensor is provided for obtaining an ultra-high resolution image. The image sensor includes a plurality of two-dimensionally arranged pixels, each of the plurality of pixels including a first meta-photodiode that selectively absorbs light of a red wavelength band, a second meta-photodiode that selectively absorbs light in a green wavelength band, and a third meta-photodiode that selectively absorbs light of a blue wavelength band. A width of each of the plurality of pixels of the image sensor may be less than a diffraction limit.

A front-side type image sensor may include a substrate successively including: a P− type doped semiconducting support substrate, an electrically insulating layer and a semiconducting active layer, and a matrix array of photodiodes in the active layer of the substrate. The substrate may include, between the support substrate and the electrically insulating layer, a P+ type doped semiconducting epitaxial layer.

An image sensor comprises an array of sensor elements, each responsive to incident photon flux, and a readout circuit coupled electronically to the array of sensor elements and configured to release an electronic signal varying in dependence on the incident photon flux. A thermal-barrier zone separates the array of sensor elements from the readout circuit, and a solid-state cooler is coupled thermally to the array of sensor elements.

A photodiode includes: a semiconductor layer; a first conductive layer on the semiconductor layer and including a transparent conductive oxide; and a second conductive layer arranged between the semiconductor layer and the first conductive layer, having a work function different from a work function of the first conductive layer, and forming a Schottky junction structure with the semiconductor layer. The work function of the second conductive layer is set to lower the Schottky-barrier height, so that light in a wide wavelength band may be sensed.

A detection device includes a photoelectric conversion portion in which a plurality of photodiodes are arranged in a planar shape, a light source configured to irradiate the photodiodes with light, and a heating electrode provided so as to face the photoelectric conversion portion, and configured to generate heat and conduct the heat to the photoelectric conversion portion.

A detector including a detector membrane comprising a semiconductor sensor and a readout circuit, the detector membrane having a thickness of 100 micrometers or less and a curved surface conformed to a curved focal plane of an optical system imaging electromagnetic radiation onto the curved surface; and a mount or substrate attached to a backside of the detector membrane. A maximum of the strain experienced by the detector membrane is reduced by distribution of the strain induced by formation of the curved surface across all of the curved surface of the detector membrane, thereby allowing a decreased radius of curvature (more severe curving) as compared to without the distribution.