A LiDAR system includes a first optical lens, and one or more first optoelectronic packages spaced apart from the first optical lens along the optical axis of the first optical lens. Each respective first optoelectronic package includes a first plurality of optoelectronic components positioned on the respective first optoelectronic package such that a surface of each respective optoelectronic component lies substantially on the first surface of best focus. The LiDAR system further includes a second optical lens, and one or more second optoelectronic packages spaced apart from the second optical lens along the optical axis of the second optical lens. Each respective second optoelectronic package includes a second plurality of optoelectronic components positioned on the respective second optoelectronic package such that a surface of each respective optoelectronic component lies substantially on the second surface of best focus.

An image sensor may include a main photodiode formed in a substrate, a first inter-layer dielectric layer formed over a lower surface of the substrate, and phase difference detectors formed over the first inter-layer dielectric layer. The phase difference detectors include a left phase difference detector that is vertically overlapping and aligned with a left side region of the main photodiode, and a right phase difference detector that is vertically overlapping and aligned with a right side region of the main photodiode.

An apparatus with at least two electromagnetic radiation sensor cells that include graphene as an electromagnetic radiation absorbing material and electrical connections between the at least two sensor cells. The electrical connections are at least partially made of graphene.

An imaging apparatus with logarithmic characteristics includes: a photodiode that receives light; a well tap unit that fixes the potential of an N-type region of the photodiode; and a resetting unit that resets the photodiode, a P-type region of the photodiode outputting a voltage signal equivalent to a photocurrent subjected to logarithmic compression. The first potential to be supplied to the well tap unit is made lower than the second potential to be supplied to the resetting unit, so that the capacitance formed with the PN junction of the photodiode is charged when the resetting unit performs a reset operation. The present technology can be applied to unit pixels having logarithmic characteristics.

In various embodiments, an image sensor and related methods of operation of the image sensor are disclosed. In an embodiment, an image sensor includes at least one pixel. The at least one pixel including a transistor to couple an overflow capacitor to a floating diffusion node. Under a low light condition, photocharge is to be collected in a floating diffusion, but substantially not into an overflow node. Under a high light condition, photocharge is to overflow into the overflow node. Other sensors and related operations are disclosed.

Embodiments described herein may be related to apparatuses, processes, and techniques directed to a planar germanium photodetector that includes n-type and p-type amorphous silicon deposits on a germanium slab. During operation, a uniform electrical field is formed across the germanium bulk between the amorphous silicon deposits. Other embodiments may be described and/or claimed.

Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed.

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.

An infrared sensor includes a first semiconductor substrate, a second semiconductor substrate, a sealing frame, and a first connection. The first semiconductor substrate includes a first main surface and an infrared detection element. The second semiconductor substrate includes a second main surface and a signal processing circuit. The sealing frame surrounds an internal space with the first main surface, the infrared detection element, and the second main surface. The first connection electrically connects the infrared detection element and the signal processing circuit. The internal space is hermetically sealed by the first main surface, the infrared detection element, the second main surface, and the sealing frame. Each of the sealing frame and the first connection is sandwiched between the first main surface and the second main surface.

Short-wave infrared (SWIR) focal plane arrays (FPAs) comprising a Si layer through which light detectable by the FPA reaches photodiodes of the FPA, at least one germanium (Ge) layer including a plurality of distinct photosensitive areas including at least one photosensitive area in each of a plurality of photosensitive photosites, each of the distinct photosensitive areas comprising a plurality of proximate steep structures of Ge having height of at least 0.5 μm and a height-to-width ratio of at least 2, and methods for forming same.