A method is provided that includes forming a cavity in a substrate. The cavity is formed to extend into the substrate from a first surface to a second surface. Sidewall spacers are formed on sidewalls of the substrate in the cavity. A semiconductor layer is formed on the second surface in the cavity of the substrate, and the semiconductor layer abuts the sidewall spacers in the cavity.

An image sensor includes a pixel having an internal capacitor. Each of a plurality of pixels of the image sensor includes a photodetection circuit and an analog-to-digital converter (ADC). The photodetection circuit generates a detection signal. The ADC converts the detection signal using a ramp signal. The photodetection circuit includes a photodiode, a floating diffusion node and an overflow transistor. The floating diffusion node accumulates photocharges generated by the photodiode and includes a parasitic capacitor. The overflow transistor electrically connects the floating diffusion node to a first internal capacitor of the ADC.

An image sensor is provided. The image sensor includes a substrate, a photodiode, and a storage node. The photodiode is disposed in the substrate and close to a first end of the substrate. The storage node is disposed in the substrate, adjacent to the photodiode, and close to the first end of the substrate. The image sensor further includes a first isolation structure, a first light shielding structure, an interlayer dielectric layer, and a lens structure. The first isolation structure is disposed in the substrate and over the storage node. The first light shielding structure is disposed in the first isolation structure. The interlayer dielectric layer is disposed over a second end of the substrate. The second end is opposite the first end. The lens structure is disposed over the interlayer dielectric layer.

An imaging device includes a plurality of photodiodes arranged in a photodiode array to generate charge in response to incident light. The plurality of photodiodes includes first and second photodiodes. A shared floating diffusion receives charge transferred from the first and second photodiodes. An analog to digital converter (ADC) performs a first ADC conversion to generate a reference readout in response to charge in the shared floating diffusion after a reset operation. The ADC is next performs a second ADC conversion to generate a first half of a phase detection autofocus (PDAF) readout in response to charge transferred from the first photodiode to the shared floating diffusion. The ADC then performs a third ADC conversion to generate a full image readout in response to charge transferred from the second photodiode combined with the charge transferred previously from the first photodiode in the shared floating diffusion.

Aspects of the technology described herein relate to improved semiconductor-based image sensor designs. In some embodiments, an integrated circuit may comprise a plurality of photodetection regions and one or more intermediate regions between the photodetection regions. In some embodiments, the intermediate regions may comprise bulk semiconductor material that facilitates a transfer of noise charge carriers from the intermediate regions to drain regions associated with each photodetection region. In some embodiments, a drain device may be configured with a gate controlling the flow of charge carriers from the intermediate regions and photodetection regions to drain regions. In some embodiments, an integrated circuit may comprise an array of pixels and a control circuit configured to control a transfer of charge carriers in the array of pixels.

Various technologies described herein pertain to a fused camera and lidar system for an autonomous vehicle. The fused camera and lidar system includes a fused receiver. The fused receiver includes optics configured to receive a received electromagnetic signal from an environment nearby the fused camera and lidar system. The fused receiver further includes a beam splitter configured to split the received electromagnetic signal into a first split electromagnetic signal (including wavelengths in a visible spectrum) and a second split electromagnetic signal (including wavelengths in an infrared spectrum). The fused receiver also includes a camera pipeline and a lidar pipeline. The camera pipeline can generate image data based on the first split electromagnetic signal, and the lidar pipeline can generate lidar data based on the second split electromagnetic signal.

Some embodiments of the present disclosure provide a semiconductor-based photon-counting sensor comprising a metal-insulator-semiconductor internal photoemission (e.g., thermionic-emission) detector formed on and/or in a first surface of a semiconductor substrate, and at least one jot formed on and/or in a second side of a semiconductor substrate. The at least one MIS photoemission detector and the at least one jot are configured such that a photocarrier generated in response to a photon incident on the MIS thermionic-emission detector is readout by the at least one jot.

A distance measuring device includes a light emission portion configured to emit light; a light receiving portion configured to receive measurement light that is emitted by the light emission portion and reflected by the measurement object, the light receiving portion comprising a plurality of pixels configured to output light reception signals that depend on the received measurement light; a plurality of determination portions configured to receive the light reception signals and to determine characteristic values from the received light reception signals, and an evaluation portion that is connected to the plurality of determination portions, the evaluation portion being configured to calculate a distance from the characteristic values determined by the determination portions. Each of the plurality of determination portions is configured to receive the light reception signals only from a plurality of non-adjacent pixels.

The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. The substrate has a plurality of protrusions disposed along a first side of the substrate over the image sensing element and a ridge disposed along the first side of the substrate. The ridge continuously extends around the plurality of protrusions.

An image sensor includes: a photoelectric conversion unit that photoelectrically converts light to generate an electric charge; a holding unit that holds the electric charge generated by the photoelectric conversion unit; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; a first transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit; and a second transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit via the holding unit.