Structures for a photonics chip that include a fully-depleted silicon-on-insulator field-effect transistor and related methods. A first device region of a substrate includes a first device layer, a first portion of a second device layer, and a buried insulator layer separating the first device layer from the first portion of the second device layer. A second device region of the substrate includes a second portion of the second device layer. The first device layer, which has a thickness in a range of about 4 to about 20 nanometers, transitions in elevation to the second portion of the second device layer with a step height equal to a sum of the thicknesses of the first device layer and the buried insulator layer. A field-effect transistor includes a gate electrode on the top surface of the first device layer. An optical component includes the second portion of the second device layer.

In one example, an apparatus comprises: a first sensor layer, including an array of pixel cells configured to generate pixel data; and one or more semiconductor layers located beneath the first sensor layer with the one or more semiconductor layers being electrically connected to the first sensor layer via interconnects. The one or more semiconductor layers comprises on-chip compute circuits configured to receive the pixel data via the interconnects and process the pixel data, the on-chip compute circuits comprising: a machine learning (ML) model accelerator configured to implement a convolutional neural network (CNN) model to process the pixel data; a first memory to store coefficients of the CNN model and instruction codes; a second memory to store the pixel data of a frame; and a controller configured to execute the codes to control operations of the ML model accelerator, the first memory, and the second memory.

A first photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is disposed to be opposed to the first electrode; and a photoelectric conversion layer that is provided between the first electrode and the second electrode. The photoelectric conversion layer includes a fullerene C.sub.60 or a fullerene C.sub.70 as a first organic semiconductor material and a second organic semiconductor material having an ionization potential of 0 or more and 5.0 eV or less.

The present disclosure generally relates to a surface grating in a photodetector device. In an example, a semiconductor device structure includes a photodetector device. The photodetector device includes one or more photodiodes disposed in or over a semiconductor substrate, and includes a surface grating disposed at a respective surface of each photodiode of the one or more photodiodes. The surface grating has one or more periodicities. Each periodicity of the one or more periodicities has a period that is along a direction parallel to a first lateral direction across the semiconductor substrate and that is equal to or less than half of a dimension of at least one photodiode of the one or more photodiodes along a direction parallel to the first lateral direction. The one or more periodicities includes multiple different pitches.

A method for manufacturing an image sensing device includes forming a first photoelectric conversion region in a semiconductor substrate, forming a recess region to extend in a direction from a surface of the semiconductor substrate toward an inside of the semiconductor substrate, arranging a mask in a portion of the recess region, forming a second photoelectric conversion region through the recess region, and forming a recess gate in the recess region. A thickness of the second photoelectric conversion region is based on a depth of the recess gate that is measured from the surface of the semiconductor substrate to a bottom surface of the recess gate.

An image sensor includes a first chip structure, a second chip structure disposed on the first chip structure, and in which pixels which each include a photoelectric conversion element are defined, and a light-transmissive cover bonded to an edge region of the second chip structure by an adhesive layer and having a recess portion covering a region in which the pixels are accommodated, wherein the second chip structure includes a substrate having a first surface and a second surface opposite to each other, color filters disposed on the second surface of the substrate to correspond to the pixels, a cover insulating layer covering the color filters, and accommodated in the recess portion and disposed to be horizontally spaced apart from an outer boundary of the recess portion, and microlenses disposed on the cover insulating layer to correspond to the pixels, respectively. An upper surface of the cover insulating layer is at a higher vertical level than the second surface of the substrate, and has a step difference of 3 μm to 15 μm with respect to the upper surface of the substrate.

An image sensor includes a dual vertical gate. The dual vertical gate includes two vertical extension portions that are spaced apart from each other in a first direction and vertically extend in a second direction perpendicular to the first direction into a substrate, and a connection portion that connects the two vertical extension portions to each other. An element isolation layer is disposed adjacent to a side surface of the vertical extension portion in the first direction. The two vertical extension portions are separated by a separation area that extends in the second direction, and a top surface of the separation area is lower than a top surface of the element isolation layer.

An image sensing device may include a photoelectric conversion region structured to convert incident light into photocharge, a first transmission gate structured to transfer the photocharge generated by the photoelectric conversion region to a first floating diffusion region structured to store the photocharge, and a second transmission gate structured to transfer the photocharge transferred to the first floating diffusion region to a second floating diffusion region structured to store the photocharge for readout, wherein a first side surface of the second transmission gate abuts on a side surface of the first transmission gate, the first floating diffusion region abuts on a bottom surface of the second transmission gate and the side surface of the first transmission gate, and the second floating diffusion region abuts on a second side surface of the second transmission gate facing away from the first side surface of the second transmission gate.

An image pickup device having a pixel region in which pixels are arranged, and in which a multilayer wiring structure is disposed. Each pixel includes a photoelectric conversion unit, a charge accumulation unit, a floating diffusion, a light shielding portion covering the charge accumulation unit and opening above the photoelectric conversion unit, and a waveguide which overlaps at least partially a portion at which the light shielding portion opens in a plan view. The device includes an insulating film disposed below the optical waveguide. The insulating film has a refractive index higher than that of an interlayer insulating film. The insulating film is disposed closer to the photoelectric conversion unit than to the lowermost wiring layer among wiring layers of the multilayer wiring structure. The insulating film extends to a portion above the light shielding portion. The insulating film is wider than a lower portion of the optical waveguide.

The present technology relates to an electromagnetic wave processing device that enables reduction of color mixture. Provided are a photoelectric conversion element formed in a silicon substrate, a narrow band filter stacked on a light incident surface side of the photoelectric conversion element and configured to transmit an electromagnetic wave having a desired wavelength, and interlayer films respectively formed above and below the narrow band filter, and the photoelectric conversion element is formed at a depth from an interface of the silicon substrate, the depth where a transmission wavelength of the narrow band filter is most absorbed. The depth of the photoelectric conversion element from the silicon substrate becomes deeper as the transmission wavelength of the narrow band filter is longer. The present technology can be applied to an imaging element or a sensor using a plasmon filter or a Fabry-Perot interferometer.