A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): ##STR00001##
in which A represents any one of oxygen, sulfur or selenium, any one of R.sub.1 to R.sub.4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R.sub.1 to R.sub.4 each represent hydrogen, any one of R.sub.5 to R.sub.8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R.sub.5 to R.sub.8 each represent hydrogen.

The present technology relates to, in a photoelectric conversion element using a photoelectric conversion film, the photoelectric conversion element and a method of manufacturing the same, a solid state image sensor, an electronic device, and a solar cell, for enabling improvement of quantum efficiency. The photoelectric conversion element includes two electrodes constituting an anode and a cathode, and a photoelectric conversion layer arranged between the two electrodes, and at least one electrode side of the two electrodes is doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer. The present technology can be applied to, for example, a solid state image sensor, an electronic device, a solar cell and the like.

An imaging apparatus includes: a semiconductor substrate which includes a charge accumulation portion containing an impurity of a first conductivity type; a contact plug which is connected to the charge accumulation portion, contains an impurity of the first conductivity type, and is not silicide; a first insulating film which includes an upper wall located above the contact plug; and a second insulating film which includes a portion located above the upper wall. A material of the second insulating film is different from a material of the first insulating film, and the first insulating film is thinner than the second insulating film.

An imaging device including a semiconductor substrate; a photoelectric converter stacked on the semiconductor substrate, the photoelectric converter being configured to generate a signal through photoelectric conversion of incident light; a multilayer wiring structure located between the semiconductor substrate and the photoelectric converter; and circuitry located in the multilayer wiring structure and the semiconductor substrate, the circuitry being configured to detect the signal. The circuitry includes a first capacitance element and a second capacitance element; and a first transistor including a first source and a first drain in the semiconductor substrate and a first gate. The first capacitance element includes a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, the multilayer wiring structure includes an insulating layer adjacent to the first capacitance element, and a permittivity of the dielectric film is greater than a permittivity of the insulating layer.

An imaging device with low power consumption is provided. It includes a pixel capable of outputting difference data between two different frames, a circuit determining the significance of the difference data, a circuit controlling power supply, an A/D converter, and the like; obtains image data and then obtains difference data; and shuts off power supply to the A/D converter and the like in the case where it is determined that there is no difference, and continues or restarts the power supply to the A/D converter and the like when it is determined that there is a difference. Determining the significance of the difference data can be performed row by row in a pixel array or at nearly the same time in all the pixels included in the pixel array.

A highly functional imaging device is provided. A small imaging device is provided. An imaging device or the like capable of high-speed operation is provided. A highly reliable imaging device is provided. The imaging device includes a pixel array, and a light-blocking layer and a transparent conductive layer that are over the pixel array. The light-blocking layer includes a first region overlapping with a first pixel and a second region overlapping with a second pixel. The transparent conductive layer includes a region overlapping with the first region and a region overlapping with the second region. The transparent conductive layer has a light-transmitting property. The transparent conductive layer is electrically connected to the first region and the second region. First light enters the photoelectric conversion device included in the first pixel. Second light enters the photoelectric conversion device included in the second pixel. The imaging device has a function of sensing a focal point in image formation with use of a first electric signal generated by conversion of the first light and a second electric signal generated by conversion of the second light.

A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, separate photosensitive blocks covering the substrate, and color filters covering the substrate, the image sensor further including first and second electrodes on either side of each photosensitive block and delimiting a second photodiode in each photosensitive block. The first photodiodes are configured to absorb the electromagnetic waves of the visible spectrum and each photosensitive block is configured to absorb the electromagnetic waves of the visible spectrum of a first portion of the infrared spectrum.

The present disclosure relates to a solid-state imaging device and electronic equipment that enable improvement of image quality of a captured image. In the solid-state imaging device, two or more photoelectric conversion layers including a photoelectric converter and a charge detector are laminated. The solid-state imaging device is configured to include a state in which light having entered one pixel of a first photoelectric conversion layer closer to an optical lens is received by the photoelectric converter of a plurality of pixels of the second photoelectric conversion layer farther from the optical lens. The technology of the present disclosure can be applied to, for example, a solid-state imaging device that performs imaging.

A photoelectric conversion element includes a first electrode, a second electrode, a first layer, and a second layer. The first layer is provided between the first electrode and the second electrode. The second layer is provided between the first layer and the second electrode. The first layer contains selenium. The second layer contains In, Ga, Zn, and O. The second layer may contain an In—Ga—Zn oxide. The selenium may be crystalline selenium. The first layer functions as a photoelectric conversion layer. The second layer functions as a hole injection blocking layer. The In—Ga—Zn oxide may have a c-axis aligned crystal.

Various implementations disclosed herein include devices, systems, and methods implemented by an electronic device with an imaging sensor including a plurality of pixels (e.g., a matrix of pixels) that each are capable of detecting illumination intensity or contrast change using at least one shared photosensor. In some implementations, the imaging sensor is capable of operating in a first illumination intensity detecting mode (e.g., in a frame-based camera mode) or in a second contrast change detecting mode (e.g., in an event camera mode). In some implementations, the first illumination intensity detecting mode and the second contrast change detecting mode are mutually exclusive. In some implementations, pixels at an imaging sensor include two transfer transistors (e.g., gates) where a first transfer transistor allows intensity detection, and a second transfer transistor allows contrast change detection.