A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

There is provided an imaging element including: a photoelectric conversion unit formed by stacking a first electrode 21, a photoelectric conversion layer, and a second electrode, in which the photoelectric conversion unit further includes a charge storage electrode 24 that has an opposite region 24a opposite to the first electrode 21 via an insulating layer 82, and a transfer control electrode 25 that is opposite to the first electrode 21 and the charge storage electrode 24 via the insulating layer 82, and the photoelectric conversion layer is disposed above at least the charge storage electrode 24 via the insulating layer 82.

A solid-state imaging device includes an imaging element group in which imaging elements each having a photoelectric conversion portion 10 formed on or above a semiconductor substrate 70 and further having a wire grid polarizer 91 and an on-chip microlens 15 are arrayed in a two-dimensional matrix, and a first interlayer insulating layer 83 and a second interlayer insulating layer 84 provided on a light incident side of the photoelectric conversion portions 10. The wire grid polarizer 91 is provided between the first interlayer insulating layer 83 and the second interlayer insulating layer 84, and the on-chip microlens 15 is provided on the second interlayer insulating layer 84. The first interlayer insulating layer 83 and the second interlayer insulating layer 84 include an oxide material or a resin material, and the on-chip microlens includes SiN or SiON.

In a general aspect, integrated spatial phase wafer-level imaging is described. In some aspects, an integrated imaging system an integrated image sensor and an edge processor. The integrated image sensor may include: a polarizer pixel configured to filter electromagnetic (EM) radiation and to allow filtered EM radiation having a selected polarization state to pass therethrough; a radiation-sensing pixel configured to detect the filtered EM radiation and to generate a signal in response to detecting the filtered EM radiation; and readout circuitry configured to perform analog preprocessing on the signal generated by the radiation-sensing pixel. The edge processor may be configured to: generate first-order primitives and second-order primitives based on the analog preprocessed signal from the readout circuitry; and determine a plurality of features of an object located in a field-of-view of the radiation-sensing pixel based on the first-order primitives and the second-order primitives.

A photosensitive device is disclosed, including an integrated circuit structure, a first pad and a second pad exposed from a surface of the integrated circuit structure, a first material layer disposed on the surface of the integrated circuit structure and covering the first pad, and a second material layer disposed on the first material layer and covering the second pad. The first material layer and the second material layer form a heterojunction photodiode.

A solid-state image sensor is provided. The solid-state image sensor includes a semiconductor substrate having photoelectric conversion elements. The solid-state image sensor also includes an isolation structure disposed between the photoelectric conversion elements. The solid-state image sensor further includes a color filter layer disposed above the semiconductor substrate and having color filter segments that correspond to the photoelectric conversion elements. Moreover, the solid-state image sensor includes an organic film disposed above the color filter layer. The solid-state image sensor also includes an upper electrode and a lower electrode respectively disposed on the upper side and the lower side of the organic film. The solid-state image sensor further includes nano-structures disposed on the upper side or the lower side of the organic film.

An imaging device including: a semiconductor substrate including a pixel region and a peripheral region; an insulating layer that covers the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry configured to be electrically connected to the first electrodes; peripheral circuitry configured to be electrically connected to the detection circuitry, and including analog circuitry; and a third electrode electrically connected to the second electrode. The third electrode overlaps the analog circuitry in a plan view, and in all cross-sections perpendicular to a surface of the semiconductor substrate, parallel to the column direction or the row direction, intersecting at least one of the first electrodes, and intersecting the third electrode, no transistor of the digital circuitry is located directly below the third electrode.

An image sensor may include a substrate having a first surface and a second surface on opposite sides, a first transistor having a first gate disposed on the first surface, a photoelectric conversion layer which generates photocharges from light incident in a first direction, a second transistor having a transistor structure disposed between the first surface and the photoelectric conversion layer and spaced from the photoelectric conversion layer, and includes a semiconductor layer composed of a metal oxide semiconductor material. The semiconductor layer may have a third surface facing the first direction and a fourth surface opposite the third surface, with a second gate disposed on the semiconductor layer. The semiconductor layer may be connected to the first gate. A light blocking layer may be disposed between the third surface and the photoelectric conversion layer, and spaced from the photoelectric conversion layer.

An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The photoelectric conversion layer includes an organic material. The semiconductor layer includes a first layer and a second layer that are stacked in order from the first electrode and second electrode side between the first electrode and second electrode and the photoelectric conversion layer. The first layer has a larger value for C5s indicating a contribution ratio of a 5 s orbital to a conduction band minimum than a value of the second layer for C5s. The second layer has a larger value for Evo indicating oxygen deficiency generation energy or a larger value for E.sub.VN indicating nitrogen deficiency generation energy than a value of the first layer for Evo or E.sub.VN.