The present invention discloses a dual image sensor. The dual image sensor according to one embodiment of the present invention includes first and second image sensor modules mounted on a printed circuit board, wherein the first image sensor module includes a first housing mounted on the printed circuit board; a first image sensor mounted on the printed circuit board and formed on a first surface of the first housing; and a first lens formed on a second surface of the first housing, and the second image sensor module includes a second housing mounted on the printed circuit board; a second image sensor mounted on the printed circuit board and formed on a first surface of the second housing; a second lens formed on a second surface of the second housing; and a quantum dot layer formed between the second image sensor and the second lens and absorbing ultraviolet light and emitting visible light converted from the absorbed ultraviolet light.

A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.

In an imaging device, each of first and second pixels in a same column includes a photoelectric converter, a first transistor, and a second transistor wherein a source (or a drain) of the first transistor is connected to the photoelectric converter, a gate of the second transistor is connected to the photoelectric converter, and a source (or a drain) of the second transistor is connected to the drain (or the source) of the first transistor. A first current source is configured to be electrically connected to the source (or the drain) of the second transistor of the first pixel, a second current source is configured to be electrically connected to the source (or the drain) of the second transistor of the second pixel, and a signal line is configured to be electrically connected to the drain (or the source) of the second transistor of the first pixel and to the drain (or the source) of the second transistor of the second pixel.

An imaging element including: a photoelectric conversion layer including a compound semiconductor material; a contact layer disposed to be stacked on the photoelectric conversion layer and including a diffusion region of first electrically-conductive type impurities in a selective region; a first insulating layer provided to be opposed to the photoelectric conversion layer with the contact layer interposed therebetween and having a first opening at a position facing the diffusion region; and a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.

An image sensor is provided. The image sensor includes a first photoelectric conversion element and a second photoelectric conversion element, which are formed in a semiconductor substrate; a red color filter formed on the first photoelectric conversion element; a cyan color filter formed on the second photoelectric conversion element; and an organic photoelectric conversion layer formed on the red color filter and the cyan color filter, the organic photoelectric conversion layer configured to absorb wavelengths in a green range.

An image sensor includes a first substrate. A first wiring structure is disposed on the first substrate and includes a first wiring layer. A second substrate is disposed on the first wiring structure and includes a first region and a second region that are spaced apart from each other. The first region includes a photoelectric conversion element disposed therein. A conductive pattern penetrates the second region of the second substrate and extends into the first wiring layer. The conductive pattern includes a step in the first wiring layer. A lowermost surface of the conductive pattern is disposed inside the first wiring layer.

An imaging device includes a unit pixel cell including: a semiconductor substrate including a first region exposed to a surface of the semiconductor substrate in a first area, and a second region directly adjacent to the first region and exposed to the surface in a second area; a photoelectric converter; a contact plug connected to the second region; a first transistor including the second region as one of a source and a drain, a first electrode covering a first portion of the first area, and a first insulation layer between the first electrode and the semiconductor substrate; a second electrode covering a second portion of the first area; and a second insulation layer between the second electrode and the semiconductor substrate. When seen in a direction perpendicular to the surface, a contact between the second region and the contact plug is located between the first electrode and the second electrode.

A more preferable pixel for detecting a focal point may be formed by using a photoelectric converting film. A solid-state image sensor includes a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes which interpose the same from above and below in which at least one of the first and second electrodes is a separated electrode separated for each pixel, and a second pixel including the photoelectric converting unit in which the separated electrode is formed to have a planar size smaller than that of the first pixel and a third electrode extending at least to a boundary of the pixel is formed in a region which is vacant due to a smaller planar size. The present disclosure is applicable to the solid-state image sensor and the like, for example.

A plasmonic field-enhanced photodetector is disclosed. The photodetector may generate photocurrent by absorbing surface plasmon polaritons (SPPs) generated by combining surface plasmons (SPs) with photons of a light wave.

A semiconductor photodetector has at least one unit pixel having a photoelectric conversion part, a charge storage part, and a detection circuit. The photoelectric conversion part includes a charge multiplication region in which incident light is converted into a charge, and the charge is multiplied by avalanche multiplication. The charge storage part is connected to the photoelectric conversion part and stores a signal charge from the photoelectric conversion part. The detection circuit is connected to the charge storage part, converts the signal charge stored in the charge storage part into a voltage, passes the voltage through an amplifier to amplify the voltage, and outputs the amplified voltage.