Patent classifications
H01L27/14681
OPERATING METHOD OF PIXEL CIRCUIT AND IMAGE SYSTEM
A pixel circuit including a photodiode, a first storage capacitor and a second storage capacitor is provided. The first storage capacitor discharges to a first output voltage in a first exposure time and to a third output voltage in a third exposure time. The second storage capacitor discharges to a second output voltage in a second exposure time and to a fourth output voltage in a fourth exposure time. The first and second exposure times are included in a first frame period. The third and fourth exposure times are included in a second frame period. The second frame period is a next frame period of the first frame period. In the first frame period, the first exposure time is subsequent to the second exposure time. In the second frame period, the third exposure time is prior to the fourth exposure time.
Display device, display unit, and display system
Provided is a display device or a display system capable of displaying images along a curved surface, a display device or a display system capable of displaying images seamlessly in the form of a ring, or a display device or a display system that is suitable for increasing in size. The display device includes a display panel. The display panel includes a first part and a second part and is flexible. The first part can display images. The second part can transmit visible light. The display panel is curved so that the second part and the first part overlap with each other.
LATERAL/VERTICAL TRANSISTOR STRUCTURES AND PROCESS OF MAKING AND USING SAME
A microfluidic device can include a base an outer surface of which forms one or more enclosures for containing a fluidic medium. The base can include an array of individually controllable transistor structures each of which can comprise both a lateral transistor and a vertical transistor. The transistor structures can be light activated, and the lateral and vertical transistors can thus be photo transistors. Each transistor structure can be activated to create a temporary electrical connection from a region of the outer surface of the base (and thus fluidic medium in the enclosure) to a common electrical conductor. The temporary electrical connection can induce a localized electrokinetic force generally at the region, which can be sufficiently strong to move a nearby micro-object in the enclosure.
HIGH-SPEED LIGHT SENSING APPARATUS II
An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal.
Operating method of pixel circuit and image system
A pixel circuit including a photodiode, a first storage capacitor and a second storage capacitor is provided. The first storage capacitor discharges to a first output voltage in a first exposure time and to a third output voltage in a third exposure time. The second storage capacitor discharges to a second output voltage in a second exposure time and to a fourth output voltage in a fourth exposure time. The first and second exposure times are included in a first frame period. The third and fourth exposure times are included in a second frame period. The second frame period is a next frame period of the first frame period. In the first frame period, the first exposure time is subsequent to the second exposure time. In the second frame period, the third exposure time is prior to the fourth exposure time.
Systems and methods for digital imaging using computational pixel imagers with multiple in-pixel counters
A stereo imaging system includes an optical assembly and a computational pixel imager (CPI) having a plurality of pixels. Each pixel includes a light sensor and counters that convert a photocurrent from the light sensor to a digital signal. The optical assembly, which directs light from a light field to the CPI, includes an optical field combiner and first and second primary lens assemblies, which are configured to receive first and second portions of the light from the light field, respectively, and to direct the first and second portions of the light to the optical field combiner. The optical field combiner includes a modulator configured to modulate the first and second portions of the light and to direct modulated first and second portions of the light onto the CPI. The counters are configured to perform digital signal processing on the digital signal.
Systems and methods for digital imaging using computational pixel imagers with multiple in-pixel counters
A stereo imaging system includes an optical assembly and a computational pixel imager (CPI) having a plurality of pixels. Each pixel includes a light sensor and counters that convert a photocurrent from the light sensor to a digital signal. The optical assembly, which directs light from a light field to the CPI, includes an optical field combiner and first and second primary lens assemblies, which are configured to receive first and second portions of the light from the lightfield, respectively, and to direct the first and second portions of the light to the optical field combiner. The optical field combiner includes a modulator configured to modulate the first and second portions of the light and to direct modulated first and second portions of the light onto the CPI. The counters are configured to perform digital signal processing on the digital signal.
Event-based computational pixel imagers
A computational pixel imaging device that includes an array of pixel integrated circuits for event-based detection and imaging. Each pixel may include a digital counter that accumulates a digital number, which indicates whether a change is detected by the pixel. The counter may count in one direction for a portion of an exposure and count in an opposite direction for another portion of the exposure. The imaging device may be configured to collect and transmit key frames at a lower rate, and collect and transmit delta or event frames at a higher rate. The key frames may include a full image of a scene, captured by the pixel array. The delta frames may include sparse data, captured by pixels that have detected meaningful changes in received light intensity. High speed, low transmission bandwidth motion image video can be reconstructed using the key frames and the delta frames.
High-speed light sensing apparatus II
An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal.
High-speed light sensing apparatus II
An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal.