A method of manufacturing a window includes: providing an ink pattern to a printing pad; providing the printing pad and the ink pattern to a target substrate; and removing the printing pad from the target substrate, the ink pattern including: a first bezel line surrounding at least one hole; and a second bezel line surrounding the first bezel line, the printing pad including: a top surface; a bottom surface; and a side surface connecting the top surface and the bottom surface, the side surface including a first pattern portion, in which the first bezel line is formed, and a second pattern portion, in which the second bezel line is formed. The first pattern portion has an inclination angle equal to or greater than about 46 degrees and equal to or smaller than about 90 degrees based on the bottom surface of the printing pad.

A method for forming a semiconductor device is provided. The method includes forming a sensor pixel array in a substrate, forming several transparent pillars over the substrate, and forming a light shielding layer over the substrate to cover the transparent pillars. The sensor pixel array has several sensor pixels, and each of the transparent pillars is correspondingly disposed on one of the sensor pixels of the sensor pixel array. The light shielding layer is a multi-layer structure. The method further includes performing a planarization process to expose the top surface of the transparent pillars.

Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.

The present technology relates to a light receiving device, a method for manufacturing a light receiving device, and a distance measuring module, capable of improving sensitivity.

A light receiving device includes: a pixel array unit in which pixels each including a first tap that detects charges photoelectrically converted by a photoelectric conversion unit and a second tap that detects charges photoelectrically converted by the photoelectric conversion unit are two-dimensionally arranged in a matrix; an on-chip lens disposed for each pixel on a light incident surface side of a substrate; and a lens isolation portion that is formed in the same layer as the on-chip lens and isolates the on-chip lenses from each other. The present technology can be applied to, for example, a distance measuring system or the like that performs distance measurement by an indirect ToF method.

A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.

Provided is a method of fabricating an image sensor device. An exemplary includes forming a plurality of radiation-sensing regions in a substrate. The substrate has a front surface, a back surface, and a sidewall that extends from the front surface to the back surface. The exemplary method further includes forming an interconnect structure over the front surface of the substrate, removing a portion of the substrate to expose a metal interconnect layer of the interconnect structure, and forming a bonding pad on the interconnect structure in a manner so that the bonding pad is electrically coupled to the exposed metal interconnect layer and separated from the sidewall of the substrate.

An image sensor includes: a substrate including a plurality of pixel regions, a first surface and a second surface opposite to the first surface; and a deep device isolation pattern disposed between adjacent pixel regioas of the phirality of pixel regions and penetrating the substrate, wherein the deep deice isolation pattern includes: a semiconductor pattern extended from the second surface toward the first surface; and sidewall insulating patterns interposed between the semiconductor pattern and the substrate, wherein the semiconductor pattern includes sidewall portions and a filling portion, wherein the sidewall portions are provided adjacent to the sidewall insulating patterns, respectively, wherein the filling portion is provided between the sidewall portions, and wherein top surfaces of the sidewall portions are located at a height higher than a top surface of the filling portion,

A photoelectric conversion apparatus having a first substrate and a second substrate overlaid on each other and including electrically conductive portions is provided. The first substrate includes a photoelectric conversion element, a first portion configured to form part of a first surface, a second portion which is included in an electrically conductive pattern closest to the first portion, and a third portion which is included in an electrically conductive pattern second closest to the first portion. The second substrate includes a fourth portion configured to form part of a second surface, and a circuit. In a planar view with respect to the first surface, an area of the first portion is smaller than an area of the second portion and larger than an area of a portion of the third portion overlaying the second portion.

A detector including a detector membrane comprising a semiconductor sensor and a readout circuit, the detector membrane having a thickness of 100 micrometers or less and a curved surface conformed to a curved focal plane of an optical system imaging electromagnetic radiation onto the curved surface; and a mount or substrate attached to a backside of the detector membrane. A maximum of the strain experienced by the detector membrane is reduced by distribution of the strain induced by formation of the curved surface across all of the curved surface of the detector membrane, thereby allowing a decreased radius of curvature (more severe curving) as compared to without the distribution.

Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed within a substrate. The substrate has a front-side surface and a back-side surface. An absorption enhancement structure is disposed along the back-side surface of the substrate and overlies the photodetector. The absorption enhancement structure includes a plurality of protrusions that extend outwardly from the back-side surface of the substrate. Each protrusion comprises opposing curved sidewalls.