A semiconductor device includes a substrate including a first semiconductor material, a gate structure formed on the substrate, and a source stressor and a drain stressor formed in the substrate respectively in a recess at two sides of the gate structure. The source stressor and the drain stressor respectively include at least a first quantum wire and at least a second quantum wire formed on the first quantum wire. The first quantum wire includes the first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. And the second quantum wire includes the second semiconductor material.

Device architectures based on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either in near-interface deep ambipolar states or in quantum wells/dots, either serving as ambipolar traps in semiconductor layers or in gate dielectric/barrier layers. In either case, the potential barrier for trapping is small and retention is provided by carrier confinement in the deep trap states and/or quantum wells/dots. The device architectures are usable as three terminal or two terminal devices.

Device architectures based on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either in near-interface deep ambipolar states or in quantum wells/dots, either serving as ambipolar traps in semiconductor layers or in gate dielectric/barrier layers. In either case, the potential barrier for trapping is small and retention is provided by carrier confinement in the deep trap states and/or quantum wells/dots. The device architectures are usable as three terminal or two terminal devices.

A light-emitting component includes a light-emitting element, a thyristor, and a light-absorbing layer. The thyristor includes a semiconductor layer having a bandgap energy smaller than or equal to a bandgap energy equivalent to a wavelength of light emitted by the light-emitting element. The thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-absorbing layer is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked. The light-absorbing layer absorbs the light emitted by the light-emitting element.

A layered structure includes a thyristor and a light-emitting element. The thyristor at least includes four layers. The four layers are an anode layer, a first gate layer, a second gate layer, and a cathode layer arranged in this order. The light-emitting element is disposed such that the light-emitting element and the thyristor are connected in series. The thyristor includes a semiconductor layer having a bandgap energy smaller than bandgap energies of the four layers.

A light-emitting component includes a light-emitting element, a driving thyristor, and a light-absorbing layer. The light-emitting element emits light of a predetermined wavelength. The driving thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-absorbing layer is disposed between the light-emitting element and the driving thyristor such that the light-emitting element and the driving thyristor are stacked, and absorbs light emitted by the driving thyristor.

A light-emitting component includes a substrate, a light-emitting element, a thyristor, and a light-transmission reduction layer. The light-emitting element is disposed on the substrate. The thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-transmission reduction layer is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked, and suppresses light emitted by the thyristor from passing therethrough.

A semiconductor device includes a substrate including a first semiconductor material, a gate structure formed on the substrate, and a source stressor and a drain stressor formed in the substrate respectively in a recess at two sides of the gate structure. The source stressor and the drain stressor respectively include at least a first quantum wire and at least a second quantum wire formed on the first quantum wire. The first quantum wire includes the first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. And the second quantum wire includes the second semiconductor material.

Techniques are disclosed for forming high mobility NMOS fin-based transistors having an indium-rich channel region electrically isolated from the sub-fin by an aluminum-containing layer. The aluminum aluminum-containing layer may be provisioned within an indium-containing layer that includes the indium-rich channel region, or may be provisioned between the indium-containing layer and the sub-fin. The indium concentration of the indium-containing layer may be graded from an indium-poor concentration near the aluminum-containing barrier layer to an indium-rich concentration at the indium-rich channel layer. The indium-rich channel layer is at or otherwise proximate to the top of the fin, according to some example embodiments. The grading can be intentional and/or due to the effect of reorganization of atoms at the interface of indium-rich channel layer and the aluminum-containing barrier layer. Numerous variations and embodiments will be appreciated in light of this disclosure.

A semiconductor film includes a cluster of semiconductor quantum dots each having a metal atom and ligands coordinating to respective semiconductor quantum dots, and the semiconductor quantum dots have an average shortest inter-dot distance of less than 0.45 nm. A solar cell, a light-emitting diode, a thin film transistor, and an electronic device include the semiconductor film.