Chalcogenidometallates of group IIB, IV and V elements and, particularly, alkali metal-containing chalcogenidometallates of cadmium, lead and bismuth are provided. Also provided are methods of using the chalcogenidometallates as molecular solders to form metal chalcogenide structures, including thin films, molded objects and bonded surfaces composed of metal chalcogenides.

Embodiments of the present disclosure are directed towards an integrated circuit (IC) die. In embodiments, an IC die may include a semiconductor substrate, a group III-Nitride or II-VI wurtzite layer disposed over the semiconductor substrate, and a plurality of buffer structures at least partially embedded in the group III-Nitride or II-VI wurtzite layer. In some embodiments, each of the plurality of buffer structures may include a central member disposed over the semiconductor substrate, a lower lateral member disposed over the semiconductor substrate and extending laterally away from the central member, and an upper lateral member disposed over the central member and extending laterally from the central member in an opposite direction from the lower lateral member. The plurality of buffer structures may be positioned in a staggered arrangement to terminate defects of the group III-Nitride or II-VI wurtzite layer. Other embodiments may be described and/or claimed.

In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

An electronic device comprising a bidirectional JFET can include a drain/source region; a lightly doped semiconductor layer overlying the drain/source region; a source/drain region overlying the lightly doped semiconductor layer; a trench extending through the source/drain region and into the lightly doped semiconductor layer; a gate electrode of the bidirectional JFET within the trench; and a field electrode within the trench. A process of forming an electronic device can include providing a workpiece including a first doped region and a lightly doped semiconductor layer overlying the first doped region; defining a trench extending into the lightly doped semiconductor layer; forming a gate electrode within the trench, wherein the gate electrode extends to a sidewall of the trench; and forming a field electrode within the trench, wherein a bidirectional JFET includes the first doped region, the lightly doped semiconductor layer, a second doped region, and the gate electrode.

The invention includes light-activated compositions and methods that are useful for promoting cell death or growth. In certain embodiments, the compositions comprise quantum dots (QD).