Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
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H01L29/02
Semiconductor bodies; ; Multistep manufacturing processes therefor
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H01L29/12
characterised by the materials of which they are formed
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including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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H01L29/245
Pb compounds, e.g. PbO
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H01L29/245

METHYLBENZENE GAS SENSOR USING PALLADIUM-CONTAINING COBALT OXIDE NANOSTRUCTURES AND METHOD FOR MANUFACTURING THE SAME
20180031532 · 2018-02-01 · ·

Provided is an oxide semiconductor gas sensor with improved performance that senses selectively methylbenzene gases with high sensitivity. The gas sensor includes a gas sensing layer composed of palladium (Pd)-loaded cobalt oxide (Co.sub.3O.sub.4) nanostructures. The response of the gas sensor according to the present invention to xylene gas at a concentration as low as 5 ppm is at least 150 times higher than that to ethanol gas. The response of the gas sensor to toluene gas at a concentration as low as 5 ppm is at least 100 times higher than that to ethanol gas. In addition, the oxide semiconductor gas sensor has the ability to selectively detect methylbenzene gases, including xylene and toluene (with at least 30-fold higher response to xylene and at least 15 times higher response to toluene than that to ethanol gas).