A photo-detecting apparatus includes a semiconductor substrate. A first germanium-based light absorption material is supported by the semiconductor substrate and configured to absorb a first optical signal having a first wavelength greater than 800 nm. A first metal line is electrically coupled to a first region of the first germanium-based light absorption material. A second metal line is electrically coupled to a second region of the first germanium-based light absorption material. The first region is un-doped or doped with a first type of dopants. The second region is doped with a second type of dopants. The first metal line is configured to control an amount of a first type of photo-generated carriers generated inside the first germanium-based light absorption material to be collected by the second region.

A detection and locating device comprising a plurality of optical sensors (Q1, Q2, Q3, Q4) having fields that together define the field of the detection and locating device, each sensor having a plurality of photodiodes having fields that together define the field of the sensor, the sensors being connected to a control unit (10) in such a manner that each sensor supplies a first signal corresponding to the sum of the signals from at least two of the photodiodes.

Techniques regarding operating one or more parallel dipole line traps are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a parallel dipole line trap comprising a diamagnetic object positioned between a plurality of dipole line magnets. The system can also comprise a split photodetector sensor positioned adjacent to the parallel dipole line trap. The split photodetector sensor can detect a displacement of the diamagnetic object.

Provided is a position detection sensor. In a first pixel part, as an incident position is closer to a first end of a first pixel pair group in a second direction, an intensity of a first electric signal decreases. In a second pixel part, as the incident position is closer to the first end, an intensity of a second electric signal increases. In a third pixel part, as the incident position is closer to a second end of a second pixel pair group in a first direction, an intensity of a third electric signal decreases. In a fourth pixel part, as the incident position is closer to the second end, an intensity of a fourth electric signal increases. A calculation unit calculates a second position on the basis of the first and second electric signals, and calculates a first position on the basis of the third and fourth electric signals.

An optical sensor includes a semiconductor substrate having a first conductive type. The optical sensor further includes a photodiode disposed on the semiconductor substrate and a metal layer. The photodiode includes a first semiconductor layer having the first conductive type and a second semiconductor layer, formed on the first semiconductor layer, including a plurality of cathodes having a second conductive type. The first semiconductor layer is configured to collect photocurrent upon reception of incident light. The cathodes are configured to be electrically connected to the first semiconductor layer and the second semiconductor layer is configured to, based on the collected photocurrent, to track the incident light. The metal layer further includes a pinhole configured to collimate the incident light, and the plurality of cathodes form a rotational symmetry of order n with respect to an axis of the pinhole.

Provided is a position detection sensor including: a light-receiving unit that includes a first pixel, a second pixel and a calculation unit that performs center-of-gravity operation by using an intensity of first and second electric signals to calculate a first position. In the first pixel, as the incident position is closer to one end of the light-receiving unit in a second direction, the intensity of the first electric signal decreases. In the second pixel, as the incident position is closer to the one end, the intensity of the second electric signal increases. The calculation unit further calculates a second position on the basis of a first integrated value obtained by integrating the intensity of the first electric signal, and a second integrated value obtained by integrating the intensity of the second electric signal.

Provided is a shape measurement sensor including a light-receiving unit and a calculation unit. The light-receiving unit includes a plurality of pixel pairs. Each of the pixel pairs includes a first pixel and a second pixel that is disposed side by side with the first pixel along a first direction. In the first pixel, as an incident position is closer to one end of the light-receiving unit in a second direction, an intensity of a first electric signals decreases. In the second pixel, as the incident position is closer to the one end, an intensity of a second electric signal increases. The calculation unit calculates the incident position in the second direction for each of the pixel pairs on the basis of the intensity of the first electric signal and the intensity of the acquired second electric signal.

A photoelectric conversion element for detecting the spot size of input light. The photoelectric conversion element includes a photoelectric conversion substrate having two main surfaces; a first conductivity-type semiconductor layer and a first electrode layer, which are sequentially laminated on the light receiving surface side, i.e., one main surface, of the photoelectric conversion substrate; and a second conductivity-type semiconductor layer and a second electrode layer, which are sequentially laminated on the rear surface side, i.e., the other main surface, of the photoelectric conversion substrate. The photoelectric conversion element is also provided with an insulating layer that is provided between the photoelectric conversion substrate and the second electrode layer, and the insulating layer has a plurality of through holes that are two-dimensionally provided along the main surface of the photoelectric conversion substrate.

A photoelectric conversion element for detecting the spot size of incident light, including a photoelectric conversion substrate provided with two main surfaces, and multiple first sensitivity sections and second sensitivity sections arranged in a prescribed direction. When sensitivity regions on the respective main surfaces of the multiple first sensitivity sections are defined as first sensitivity regions, and sensitivity regions that appear on the main surfaces of the second sensitivity sections are defined as second sensitivity regions, each of the first sensitivity regions receives at least a part of light incident on the main surfaces, and has a pattern in which, in accordance with enlargement of an irradiation region irradiated with incident light on the main surface, the proportion of the first sensitivity regions in the irradiation region with respect to the first sensitivity regions other than those in the irradiation region and the second sensitivity regions is decreased.

A photoelectric conversion element for detecting the spot size of incident light. The photoelectric conversion element includes a photoelectric conversion substrate having two principal surfaces, and comprises a first sensitive part and a second sensitive part that have mutually different photoelectric conversion characteristics. When a sensitive region appearing in the principal surface of the first sensitive part is defined as a first sensitive region, and a sensitive region appearing in the principal surface of the second sensitive part is defined as a second sensitive region, the first sensitive region is configured to receive at least a portion of light incident on a light-receiving surface and to decrease, proportionally to enlargement in an irradiation region of the principal surface irradiated with the incident light, the ratio of the first sensitive region to the second sensitive region in the irradiation region.