H01L31/02162

Optical detection apparatus and methods

An optical object detection apparatus and associated methods. The apparatus may comprise a lens (e.g., fixed-focal length wide aperture lens) and an image sensor. The fixed focal length of the lens may correspond to a depth of field area in front of the lens. When an object enters the depth of field area (e.g., due to a relative motion between the object and the lens) the object representation on the image sensor plane may be in-focus. Objects outside the depth of field area may be out of focus. In-focus representations of objects may be characterized by a greater contrast parameter compared to out of focus representations. One or more images provided by the detection apparatus may be analyzed in order to determine useful information (e.g., an image contrast parameter) of a given image. Based on the image contrast meeting one or more criteria, a detection indication may be produced.

MULTIFUNCTIONAL COLLIMATOR FOR CONTACT IMAGE SENSORS

Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.

Method of producing a radiation sensor semiconductor device comprising a multiple color filter
09837573 · 2017-12-05 · ·

The method comprises the steps of providing a semiconductor device comprising a semiconductor layer (1) with at least one radiation sensor (6) and a dielectric layer (2), arranging a web (3) comprising a plurality of recesses (4) on the dielectric layer, and introducing ink of different colors (A, B, C) in the recesses by inkjets (I).

Near infrared cutoff filter
09835779 · 2017-12-05 · ·

To provide a near infrared cutoff filter capable of suppressing an influence to a captured image when the incidence angle of light to the near infrared cutoff filter is large. The near infrared cutoff filter comprises a substrate to transmit at least light in the visible wavelength region and, on at least one side of the substrate, an infrared reflective layer constituted by a layered film having a high refractive index film H and a low refractive index film L repeatedly laminated, or a layered film having a high refractive index film H, an intermediate refractive index film M and a low refractive index film L′ repeatedly laminated, and has light transmittance characteristics such that the difference between the maximum value and the minimum value among the decrease rates in average transmittance in region R, region G and region B, is at most 0.05.

PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
20170345961 · 2017-11-30 ·

Disclosed is a package structure and a method for manufacturing the same. The package structure comprises: a lead frame; a first light sensor being electrically coupled to the lead frame; a light emitter separated from the first light sensor and being electrically coupled to the lead frame; a first plastic body in which a trench is formed; and a photoresist layer located on a side surface of the first plastic body, wherein the first plastic body is separated by the trench into a first portion covering the light emitter and a second portion covering the first light sensor, the first portion of the first plastic body has the side surface facing the first light sensor. The photoresist layer prevents the light with a specific wavelength from passing through and avoids the influence to the normal operation of the light sensor, so that the anti-interference capacity of the light sensor is ensured and the size of package structure is reduced while the light sensor is integrated.

COLORED PHOTOVOLTAIC MODULES

A low-reflection-loss low-angle-sensitive colored photovoltaic (PV) module is described. This colored PV module includes a transparent substrate; an array of solar cells encapsulated between a top encapsulation sheet and a bottom encapsulation sheet; and a color filter structure embedded between the top encapsulation sheet and the transparent substrate and configured to cause wavelength-selective reflections of incident light received by the colored PV module. Moreover, the transparent substrate includes a flat front surface configured to receive the incident light and a texture back surface configured with an array of features. The color filter structure is formed on the textured back surface of the transparent substrate to create a textured interface between the textured back surface and the color filter structure.

Method for manufacturing a sensing device

A method for manufacturing a sensing device is provided. The method includes: providing a substrate; forming a sensing unit on the substrate; forming a first light-shielding layer on the sensing unit; forming a first anti-reflection layer on the sensing unit; and patterning the first light-shielding layer and the first anti-reflection layer using a single lithography process to form a first pinhole corresponding to the sensing unit.

Illuminance sensor, proximity sensor, and display device including the sensor
09831373 · 2017-11-28 · ·

In order to provide a single-unit sensor which serves as both an illuminance sensor and a proximity sensor, the sensor (1) includes a light receiving element section (E1), an infrared cut-off filter (IRcutF), and a switching section (SWS) for switching spectral characteristics of the light receiving element section (E1). The infrared cut-off filter (IRcutF) has an opening, and an infrared light receiving P-N junction (PDir) is provided at a location deeper in a substrate than a visible light receiving P-N junction (PDvis).

Semiconductor optical package and method

Embodiments of the present disclosure are directed to optical packages having a package body that includes a light protection coating on at least one surface of a transparent material. The light protection coating includes one or more openings to allow light to be transmitted to the optical device within the package body. In one embodiment, the light protection coating and the openings allow substantially perpendicular radiation to be directed to the optical device within the package body. In one exemplary embodiment the light protection coating is located on an outer surface of the transparent material. In another embodiment, the light protection coating is located on an inner surface of the transparent material inside of the package body.

Metal mirror based multispectral filter array
11670658 · 2023-06-06 · ·

A device may include a multispectral filter array disposed on the substrate. The multispectral filter array may include a first metal mirror disposed on the substrate. The multispectral filter may include a spacer disposed on the first metal mirror. The spacer may include a set of layers. The spacer may include a second metal mirror disposed on the spacer. The second metal mirror may be aligned with two or more sensor elements of a set of sensor elements.