Provided is a photo-detection device including: a semiconductor substrate having a first face; a pixel unit in which a pixel having an avalanche diode is arranged in the semiconductor substrate; and a sixth semiconductor region arranged so as to surround a first semiconductor region to a fifth semiconductor region that form the avalanche diode in a planar view from a direction perpendicular to the first face, and an electric potential that is different from the electric potential supplied to the avalanche diode is supplied to the sixth semiconductor region.

The present disclosure discloses an infrared sensor, an infrared gas detector and an air quality detection device. The infrared sensor includes electrodes, a substrate, an isolation layer and a graphene film. The graphene film has a periodical nanostructure. The infrared sensor enhances the absorption of infrared light, and is capable of only absorbing specific infrared wavelengths, thus improving the selective performance of the infrared gas detector.

A light detection device includes a semiconductor substrate. The semiconductor substrate forms an APD and a temperature compensation diode so as to be spaced apart from each other when viewed from a direction perpendicular to a main surface. The semiconductor substrate includes a peripheral carrier absorbing portion surrounding the APD when viewed from the direction perpendicular to the first main surface and configured to absorb carriers located at the periphery. A part of the peripheral carrier absorbing portion is located between the APD and the temperature compensation diode when viewed from the direction perpendicular to the main surface.

A photonic mixer device for multiplying an impinging optical signal with a reference electrical signal includes: a semiconductor substrate of a first conductivity type; two detector regions of a second conductivity type different from the first conductivity type; two biasing regions of the first conductivity type with a higher dopant concentration than the dopant concentration of the semiconductor substrate, each biasing region positioned near one of the respective detector regions, wherein an electrical field can be formed in the semiconductor substrate by applying a voltage bias between the biasing regions; two bias electrodes, which are isolated from the substrate and the biasing regions, wherein each bias electrode is only locally, partially or completely, covering an outer edge of one of the respective biasing regions.

Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers. An intrinsically-doped silicon layer may be below the germanium layer between the n-type silicon layer and the p-type silicon layer. A top portion of the germanium layer may be p-doped.

An apparatus includes a first semiconductor region of a first conductivity type configured to collect a signal charge, and a connection region of a second conductivity type configured to feed a predetermined potential to a well including a second semiconductor region of the second conductivity type at a depth to which the connection region extends, a third semiconductor region of the second conductivity type at a position deeper than the connection region and the second semiconductor region, and a fourth semiconductor region between the second semiconductor region and the third semiconductor region, wherein a dopant for use in forming a semiconductor region of the first conductivity type is injected in the fourth semiconductor region, and a main carrier of the fourth semiconductor region is a carrier of the same conductivity type as a majority carrier of a semiconductor region of the second conductivity type.

Provided are a radiation detector and a radiation detection apparatus in which the efficiency of detecting radiation is enhanced by increasing a portion capable of detecting radiation. A radiation detector includes a semiconductor part having a plate-like shape, the semiconductor part being provided with a through hole penetrating the semiconductor part, one surface of the semiconductor part being an incident surface for radiation. The semiconductor part has a sensitive portion capable of detecting incident radiation, the sensitive portion including an inner edge of the incident surface.

An embodiment of the present technology includes an avalanche photodiode including a substrate including a first side with a first surface and a second side with a second surface that is opposite the first surface. The second surface is a light-incident surface of the substrate. The avalanche photodiode includes an anode region disposed in the substrate at the first side of the substrate, an anode electrode coupled to the anode region, a cathode region disposed in the substrate at the first side of the substrate, a cathode electrode coupled to the cathode region, and an insulating layer disposed in the substrate at the first side of the substrate. The anode electrode or the cathode electrode passes through the insulating layer.

A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

A light detecting device includes a light absorbing layer configured to absorb light in a wavelength range from visible light to short-wave infrared (SWIR); a first semiconductor layer provided on a first surface of the light absorbing layer; an anti-reflective layer provided on the first semiconductor layer and comprising a material having etch selectivity with respect to the first semiconductor layer; and a second semiconductor layer provided on a second surface of the light absorbing layer. The first semiconductor layer has a thickness less than 500 nm so as to be configured to allow light to transmit therethrough in the wavelength range from visible light to SWIR.