A photoelectric conversion apparatus includes a semiconductor substrate, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, an embedded electrode, and an insulation member arranged between the embedded electrode and the first semiconductor region and the second semiconductor region. A deepest portion of the embedded electrode is arranged at a position deeper than a p-n junction surface of the first semiconductor region and the second semiconductor region. A potential difference between the first semiconductor region and the second semiconductor region is a potential difference at which avalanche multiplication does not occur, and a potential difference between the embedded electrode and the second semiconductor region is a potential difference at which avalanche multiplication occurs.

Provided is an AlGaN unipolar carrier solar-blind ultraviolet detector that is based on the AlGaN polarization effect and that uses the double heterojunction of the p-AlzGa1-zN/i-AlyGa1-yN/n-AlxGa1-xN (0.45=<x,z<y) as the main structure of the detector. It makes full use of the polarization built-in electric field pointing from n-type AlGaN to p-type AlGaN to enhance the electric field strength of the i-type absorption region and enhance the efficiency of carrier absorption and separation. At the same time, the valence band step of the p-AlzGa1-zN/i-AlyGa1-yN heterojunction is used to effectively restrict holes from entering the absorption region to recombine with electrons, thereby increasing the carrier lifetime. Furthermore, during device manufacturing the structure is such designed that makes it difficult for photo-generated holes to participate in the photoconductivity so as to realize unipolar conduction of electrons, thereby obtaining a high response speed and high gain current.

Disclosed herein is a radiation detector comprising: a substrate of an intrinsic semiconductor; a semiconductor single crystal in a recess in the substrate, the semiconductor single crystal having a different composition from the intrinsic semiconductor; a first electrical contact in electrical contact with the semiconductor single crystal; a second electrical contact on or in the substrate, and surrounding the first electrical contact or the semiconductor single crystal, wherein the second electrical contact is electrically isolated from the semiconductor single crystal; wherein the radiation detector is configured to absorb radiation particles incident on the semiconductor single crystal and to generate charge carriers.

Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.

A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.

An apparatus comprises a transparent substrate (3), at least one sensor (5) for the detection of electromagnetic radiation (31), and for each sensor a corresponding mirror having a reflective surface (11). The reflective surface (11) is shaped so that electro-magnetic radiation (31) incident on the transparent substrate (3) at a specific angle, passing through the transparent substrate (3) and being reflected by the reflective surface (11) is directed towards the sensor (5). The sensor (5) comprises a two dimensional material like graphene and may be a quantum dot functionalised graphene field effect transistor. The present invention enables the incident electromagnetic radiation (31) to be focussed onto the at least one sensor (5) without the use of additional optical components like lenses or microlenses. This may enable focussed images to be obtained by the apparatus.

The present disclosure discloses an infrared sensor, an infrared gas detector and an air quality detection device. The infrared sensor includes electrodes, a substrate, an isolation layer and a graphene film. The graphene film has a periodical nanostructure. The infrared sensor enhances the absorption of infrared light, and is capable of only absorbing specific infrared wavelengths, thus improving the selective performance of the infrared gas detector.

A photoelectric conversion apparatus includes a semiconductor substrate, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, an embedded electrode, and an insulation member arranged between the embedded electrode and the first semiconductor region and the second semiconductor region. A deepest portion of the embedded electrode is arranged at a position deeper than a p-n junction surface of the first semiconductor region and the second semiconductor region. A potential difference between the first semiconductor region and the second semiconductor region is a potential difference at which avalanche multiplication does not occur, and a potential difference between the embedded electrode and the second semiconductor region is a potential difference at which avalanche multiplication occurs.

A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each having a light receiving region, the avalanche photodiodes being arranged in a matrix at the semiconductor substrate, and a plurality of through-electrodes electrically connected to corresponding light receiving regions. The plurality of through-electrodes are arranged for each area surrounded by four mutually adjacent avalanche photodiodes of the plurality of avalanche photodiodes. Each of the light receiving regions has, when viewed from a direction perpendicular to a first principal surface of the semiconductor substrate, a polygonal shape including a pair of first sides opposing each other in a row direction and extending in a column direction and four second side opposing four through-electrodes surrounding the light receiving region and extending in directions intersecting with the row direction and the column direction. The length of the first side is shorter than the length of the second side.

A photodiode has an absorption layer and a cap layer operatively connected to the absorption layer. A pixel is formed in the cap layer and extends into the absorption layer to receive charge generated from photons therefrom. The pixel defines an annular diffused area to reduce dark current and capacitance. A photodetector includes the photodiode. The photodiode includes an array of pixels formed in the cap layer. At least one of the pixels extends into the absorption layer to receive charge generated from photons therefrom. At least one of the pixels defines an annular diffused area to reduce dark current and capacitance.