A method of fabricating a color tunable thin film photovoltaic device includes depositing a layer of a semiconducting compound configured to exhibit a photovoltaic effect, and depositing a buffer layer over the layer of the semiconducting compound. Depositing transparent conducting oxides (TCO) over the buffer layer is followed by selecting two or more layers of optically transparent materials such that constructive interference among wavelengths reflected by the buffer layer, the TCO, and the two or more layers results in a desired exhibited color and depositing the two or more layers of the optically transparent materials above the TCO.

Provided is a method of forming a tin oxide layer using a tin metal target which forms the tin oxide layer on a glass substrate using the tin metal target. The present invention provides the method of forming a tin oxide layer using a tin metal target, which includes forming a tin oxide buffer layer (SnO.sub.2) on the glass substrate by sputtering using the tin metal target and forming a tin oxide (SnO.sub.2−x) semiconductor layer (0<x≦0.01) on the tin oxide buffer layer by sputtering using the tin metal target.

Disclosed is a solar cell having a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side, and further includes an insulating layer between the first electroconductive layer and the second electroconductive layer. The first electroconductive layer includes a low-melting-point material, and a part of the second electroconductive layer is conductively connected with the first electroconductive layer through, for example, an opening in the insulating layer. The second electrode layer is preferably formed by a plating method. In addition, it is preferable that before forming the second electroconductive layer, annealing by heating is carried out to generate the opening section in the insulating layer.

An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

An interlayer is used to reduce Fermi-level pinning phenomena in a semiconductive device with a semiconductive substrate. The interlayer may be a rare-earth oxide. The interlayer may be an ionic semiconductor. A metallic barrier film may be disposed between the interlayer and a metallic coupling. The interlayer may be a thermal-process combination of the metallic barrier film and the semiconductive substrate. A process of forming the interlayer may include grading the interlayer. A computing system includes the interlayer.

A transparent electro-conductive laminate comprising: a substrate film made of a polyimide; and a thin film made of an electro-conductive material and stacked on the substrate film, wherein the polyimide is a polyimide containing at least one repeating unit represented by the following general formula (1): ##STR00001##
[in the formula (1), R.sup.1, R.sup.2, and R.sup.3 each independently represent one selected from the group consisting of a hydrogen atom, alkyl groups having 1 to 10 carbon atoms, and a fluorine atom, R.sup.4 represents an aryl group having 6 to 40 carbon atoms, and n represents an integer of 0 to 12], having a glass transition temperature of 350° C. to 450° C., and having a linear expansion coefficient of 30 ppm/° C. or less, the linear expansion coefficient being determined by measuring change in length under a nitrogen atmosphere and under a condition of a rate of temperature rise of 5° C./minute in a temperature range from 50° C. to 200° C.

Disclosed herein are a core-shell nano particle for formation of a transparent conductive film, a manufacturing method of the core-shell nano particle, and a manufacturing method of a transparent conductive film using the core-shell nano particle and, more particularly, a core-shell structured nano particle consisting of a core including indium or indium oxide and a shell including tin, a manufacturing method of the core-shell structured nano particle, and a manufacturing method of a transparent conductive film including (i) dispersing a core-shell structured nano particle into a solvent to manufacture a coating liquid, (ii) applying the coating liquid onto a substrate to form a coating layer, (iii) drying the coating layer, and (iv) performing an annealing process on the coating layer.

An electronic device is provided and includes a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the first electrode including an amorphous oxide including a quaternary compound including one or more of indium, gallium and aluminum and further including zinc and oxygen, the first electrode having a laminated structure including a first B layer and a first A layer from a photoelectric conversion layer side, and a work function value of the first A layer of the first electrode being lower than a work function of the first B layer of the first electrode.

A method for manufacturing a substrate with a transparent conductive film, includes emitting subnano-to-nanosecond laser light to a transparent conductive film formed on a surface of a substrate to form a laser-induced periodic surface structure having a corrugated shape in at least a part of the transparent conductive film.

A thin-film solar cell contains: a lens material layer, a conductive contact layer, a first n-p semiconductor layer, a second n-p semiconductor layer, an insulation layer, a transparent conducting layer, a substrate, multiple first vias, multiple insulators, and multiple electrical conductors. A respective first via passes through the lens material layer, the conductive contact layer, and the first n-p semiconductor layer. The multiple insulators are accommodated in the respective first via, a top of a respective insulator is connected with the second n-p semiconductor layer, and a bottom of the respective insulator is connected with the insulation layer. The respective insulator includes a respective second via. A respective electrical conductor is formed in the respective second via, a top of the respective electrical conductor is connected with a respective transparent conducting layer, and a bottom of the respective electrical conductor is connected with the substrate.