H01L31/022483

Photovoltaic Devices and Method of Making

A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof. A method of making a photovoltaic device is also presented

METHOD FOR PRODUCING A REAR-SIDE CONTACT SYSTEM FOR A SILICON THIN-LAYER SOLAR CELL

A method for producing a rear-side contact system for a silicon thin-film solar cell having pn junction formed from a silicon absorber layer and an emitter layer includes applying an organic insulation layer to the emitter layer; producing contact holes in the insulation layer as far as the absorber layer and the emitter layer; subsequently insulating the contact holes; subsequently applying a low-melting metal layer to form n and p contacts in the contact holes; separating the metal layer into n-contacting and p-contacting regions by laser-cutting; before applying the organic insulation layer to the emitter layer, applying a TCO layer; producing holes for contacts for the silicon absorber layer in the organic insulation; and subsequently selectively doping the produced holes for the contacts as far as the silicon absorber layer.

OPTICAL SENSOR
20220310855 · 2022-09-29 · ·

The optical sensor includes a substrate, a first transistor for functioning as a light-receiving element and a second transistor for writing/reading in a pixel region provided on the substrate. The first transistor is formed by a transistor using polycrystalline silicon, the second transistor is formed by a transistor using an oxide semiconductor. A light-shielding layer is provided on the back side of the oxide semiconductor of the second transistor. Thus, it is possible to irradiate light to the optical sensor fora long time, and in addition to increasing the amount of light received by the first transistor, it is possible to suppress variations in the characteristics of the second transistor.

Conductive film, method for manufacturing the same and display device comprising the same

The present application relates to a conductive film, a method for manufacturing the same, and a display device including the same.

COLOR TUNABLE THIN FILM PHOTOVOLTAIC DEVICES
20170278995 · 2017-09-28 ·

A method of fabricating a color tunable thin film photovoltaic device includes depositing a layer of a semiconducting compound configured to exhibit a photovoltaic effect, and depositing a buffer layer over the layer of the semiconducting compound. Depositing transparent conducting oxides (TCO) over the buffer layer is followed by selecting two or more layers of optically transparent materials such that constructive interference among wavelengths reflected by the buffer layer, the TCO, and the two or more layers results in a desired exhibited color and depositing the two or more layers of the optically transparent materials above the TCO.

Thin-film solar module with improved shunt resistance

A thin-film solar module with a substrate and a layer structure applied thereon. The layer structure has a rear electrode layer, a front electrode layer, and an absorber layer arranged between the rear electrode layer and the front electrode layer. The absorber layer has doping of a first conductor type, while the front electrode layer has doping of a second conductor type. Serially connected solar cells are formed in the layer structure by patterning zones having a first patterning trench subdividing the rear electrode layer, a second patterning trench subdividing the absorber layer, and a third patterning trench subdividing the front electrode layer.

THIN-FILM SOLAR CELL
20210384370 · 2021-12-09 ·

A thin-film solar cell contains: a lens material layer, a conductive contact layer, a first n-p semiconductor layer, a second n-p semiconductor layer, an insulation layer, a transparent conducting layer, a substrate, multiple first vias, multiple insulators, and multiple electrical conductors. A respective first via passes through the lens material layer, the conductive contact layer, and the first n-p semiconductor layer. The multiple insulators are accommodated in the respective first via, a top of a respective insulator is connected with the second n-p semiconductor layer, and a bottom of the respective insulator is connected with the insulation layer. The respective insulator includes a respective second via. A respective electrical conductor is formed in the respective second via, a top of the respective electrical conductor is connected with a respective transparent conducting layer, and a bottom of the respective electrical conductor is connected with the substrate.

Lead halide adduct compound and perovskite element using same

Provided is an adduct represented by Formula 1:
A.PbY.sub.2.Q  (1) wherein A is an organic or inorganic halide, Y is F.sup.−, Cl.sup.−, Br.sup.− or I.sup.− as a halogen ion, and Q is a Lewis base including a functional group containing a nitrogen (N), oxygen (O) or sulfur (S) atom with an unshared pair of electrons as an electron pair donor. The Lewis base is maintained more stable in the lead halide adduct. Therefore, the use of the adduct enables the fabrication of a perovskite solar cell with high conversion efficiency.

Imaging element, solid state imaging device, and electronic device having an amorphous oxide electrode comprising tungsten
11374138 · 2022-06-28 · ·

There is provided imaging devices and methods of forming the same, including a stacked structure body including a first electrode, a light-receiving layer formed on the first electrode, and a second electrode formed on the light-receiving layer, where the second electrode comprises an amorphous oxide comprising at least one of zinc and tungsten, and where the second electrode is transparent and electrically conductive and has absorption characteristics of 20% or more at a wavelength of 300 nm.

HYBRID-ENERGY APPARATUS, SYSTEM, AND METHOD THEREFOR
20220149218 · 2022-05-12 ·

A multi-layer apparatus has a transparent or semi-transparent substrate, a solar-cell layer coupled to the substrate, an energy-storage layer coupled to the solar-cell layer, and a converter layer coupled to the energy-storage layer. The solar-cell layer has a plurality of solar cells for receiving light through the substrate and converting energy of the received light to a first electrical energy, the energy-storage layer has one or more energy-storage units for storing a second electrical energy, and the converter layer has one or more power converters electrically connected to the solar-cell layer and the energy-storage layer for receiving the first electrical energy and the second electrical energy therefrom and outputting a third electrical energy via an output thereof.