Systems and methods for generating electrical current from at least one photovoltaic cell is described herein. The photovoltaic cell may be disposed over a display of an electronic device. The photovoltaic cell may comprise first and second conductive layers and a photovoltaic layer. The first conductive layer may be etched such that a width of the metal layer is less than a width of the photovoltaic layer providing visibility to the display disposed below. In some embodiments, a capacitive touch sensor is disposed between the metal layer and the absorber layer for providing interaction with a user.

A multiplication layer on a semiconductor substrate of n-type contains Al atoms. An electric field control layer on the multiplication layer is of p-type, and includes a high-concentration area, and a low-concentration area lower in impurity concentration than the high-concentration area which is formed outside the high-concentration area. An optical absorption layer on the electric field control layer is lower in impurity concentration than the high-concentration area. A window layer of n-type formed on the optical absorption layer is larger in band gap than the optical absorption layer. A light-receiving area of p-type is formed apart from an outer edge of the window layer, and at least partly faces the high-concentration area through the window layer and the optical absorption layer. The guard ring area of p-type which the window layer separates from the light-receiving area penetrates through the window layer to extend into the optical absorption layer.

A method of manufacturing a back electrode type solar cell, may include forming by physical vapor deposition at least one layer of an electrode material film on both a first conductivity type semiconductor layer, to give a first electrode layer, and a second conductivity type semiconductor layer, to give a second electrode layer, and patterning the first electrode layer and the second electrode layer each in a strip-like shape such that the first electrode layer and the second electrode layer both extend in a first direction and are arranged in a second direction by removing a part of the electrode material film.

A method for preparing a P-type crystalline silicon rear electrode, comprising: printing an all-aluminum paste on a P-type crystalline silicon rear passivation layer, then printing a linear interlayer-glass paste on the all-aluminum paste, and finally overprinting rear silver electrodes on the linear middle layer-glass paste. In a solar cell prepared using the method, good contact with silver and aluminum is kept without causing damage to the passivation layer and compromising the conductivity. In the present invention, a complete all-aluminum back surface field can be formed, leading to an improved field passivation property of an electrode region and reduced carrier recombination.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

A monofacial or bifacial crystalline solar cell, on the front face of which over the entire area a first surface passivation layer is arranged directly on the semiconductor interface and above this a first optically opaque, electrically conductive material is arranged in first lateral regions as a front face contact, and a first optically transparent, electrically conductive material is arranged exclusively in second lateral regions. The first optically transparent, electrically conductive material is electrically conductively connected to the front face contact and to a first region of the semiconductor material of the solar cell. The method provides for application of the first optically transparent, electrically conductive material only after the first optically opaque, electrically conductive material has been applied, in such a way that firing of the front face contact is avoided.

A method for producing a thin-film solar module with serially connected solar cells and related device. A back electrode layer is deposited on one side of a flat substrate and subdivided by first patterning trenches. An absorber layer is deposited over the back electrode layer and subdivided by second patterning trenches. A front electrode layer is deposited over the absorber layer. At least the front electrode layer is subdivided by third patterning trenches. A direct succession of a first patterning trench, a second patterning trench, and two adjacent third patterning trenches forms a patterning zone. The third patterning trenches are produced by laser ablation through a pulsed laser beam, where one third patterning trench is produced with laser pulses of higher energy and the other third patterning trench of the patterning zone is produced with laser pulses of lower energy.

A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof. A method of making a photovoltaic device is also presented.