A field effect transistor comprising a buffer and channel layer formed successively on a substrate. A source electrode, drain electrode, and gate are all formed in electrical contact with the channel layer, with the gate between the source and drain electrodes. A spacer layer is formed on at least a portion of a surface of the channel layer between the gate and drain electrode and a field plate is formed on the spacer layer isolated from the gate and channel layer. The spacer layer is electrically connected by at least one conductive path to the source electrode, wherein the field plate reduces the peak operating electric field in the MESFET.

Disclosed are a solar cell and preparing method of the same. The solar cell includes a back electrode layer on a support substrate, a molybdenum oxide layer on the back electrode layer, a light absorbing layer on the molybdenum oxide layer, and a front electrode layer on the light absorbing layer.

A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

The present invention relates to an exchanger apparatus (1) for supplying electricity and heat, comprising a radiator element (2) able to irradiate energy as a function of an operating temperature thereof; an electronic device (3) designed to produce output electricity from the energy irradiated by the element, thereby dissipating heat; and a heat exchanger (4) designed to absorb the heat dissipated by the electronic device (3), thereby increasing the temperature of an output fluid.

The present invention relates to an exchanger apparatus (1) for supplying electricity and heat, comprising a radiator element (2) able to irradiate energy as a function of an operating temperature thereof; an electronic device (3) designed to produce output electricity from the energy irradiated by the element, thereby dissipating heat; and a heat exchanger (4) designed to absorb the heat dissipated by the electronic device (3), thereby increasing the temperature of an output fluid.

A light emitting device with on-chip optical power readout includes a light emitting mesa and a light detecting mesa formed adjacent to each other on the same substrate of a chip, and a portion of the light emitted from the light emitting mesa is transmitted to the light detecting mesa at least through the substrate. The light emitting mesa and the light detecting mesa have exactly the same epitaxial structure and can be electrically isolated from each other by an insulation layer, or an airgap formed therebetween, or by ion implantation. The light emitting mesa and the light detecting mesa can also share an n-type structure and a common n-electrode while having their own p-electrode, respectively.

The present technology relates to a solid-state image capturing apparatus and an electronic device that can acquire a normal image and a narrow band image at the same time. The solid-state image capturing apparatus includes a plurality of substrates laminated in two or more layers, and two or more substrates of the plurality of substrates have pixels that perform photoelectric conversion. At least one substrate of the substrates having the pixels is a visible light sensor that receives visible light, and at least another substrate of the substrates having the pixels is a narrow band light sensor that includes narrow band filters being optical filters permeating light in a narrow wavelength band, and receives narrow band light in the narrow band.