H01L31/0328

PHOTODETECTOR, MODULATOR, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS
20230327043 · 2023-10-12 ·

The present invention relates to a photodetector (3) comprising: a longitudinal portion (12) of a waveguide (11) which comprises or is formed by two waveguide segments (12a, 12b), which extend at least substantially parallel to one another in the longitudinal direction and are preferably distanced from one another in the transverse direction, forming a gap (14) between them; and an active element (13), which overlies the longitudinal portion (12) of the waveguide and comprises at least one material or consists of at least one material that absorbs electromagnetic radiation of at least one wavelength and generates an electric photosignal as a result of the absorption, the two waveguide segments (12a, 12b) each being in contact, at least in some portions, on at least one side, in particular on the side facing the active element (14), with a gate electrode (15a, 15b) which preferably comprises silicon or consists of silicon.

PHOTODETECTOR, MODULATOR, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS
20230327043 · 2023-10-12 ·

The present invention relates to a photodetector (3) comprising: a longitudinal portion (12) of a waveguide (11) which comprises or is formed by two waveguide segments (12a, 12b), which extend at least substantially parallel to one another in the longitudinal direction and are preferably distanced from one another in the transverse direction, forming a gap (14) between them; and an active element (13), which overlies the longitudinal portion (12) of the waveguide and comprises at least one material or consists of at least one material that absorbs electromagnetic radiation of at least one wavelength and generates an electric photosignal as a result of the absorption, the two waveguide segments (12a, 12b) each being in contact, at least in some portions, on at least one side, in particular on the side facing the active element (14), with a gate electrode (15a, 15b) which preferably comprises silicon or consists of silicon.

High Efficiency Graphene/Wide Band-Gap Semiconductor Heterojunction Solar Cells
20210343962 · 2021-11-04 ·

A photovoltaic solar cell apparatus is described herein combining the advantages of several discoveries that address the previously unsolved problem of creating high conversion efficiency solar cells at a low cost. The solar cell designs and underlying principals disclosed herein may be applied in any type of photovoltaic solar power application, such as large scale photovoltaic solar plants, rooftop panels, solar powered electronic devices, and many others.

OPTICAL CLADDING LAYER DESIGN
20220393047 · 2022-12-08 ·

Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

OPTICAL CLADDING LAYER DESIGN
20220393047 · 2022-12-08 ·

Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
20230371291 · 2023-11-16 ·

A method for manufacturing a solar cell includes: forming a first photoelectric conversion part including a photoelectric conversion layer including a perovskite compound, a first transport layer, and a second transport layer; and forming a first electrode electrically connected to the first photoelectric conversion part and forming a second electrode electrically connected to the first photoelectric conversion part. The formation of the first photoelectric conversion part includes: forming a first film using a first material constituting the perovskite compound; spraying a second material constituting the perovskite compound on the first film to form a second film; performing a first heat treatment to diffuse the first film and the second film to form the perovskite compound; and performing washing to remove the residual second film residual on the perovskite compound.

High Efficiency Graphene/Wide Band-Gap Semiconductor Heterojunction Solar Cells
20220190267 · 2022-06-16 ·

A photovoltaic solar cell apparatus is described herein combining the advantages of several discoveries that address the previously unsolved problem of creating high conversion efficiency solar cells at a low cost. The solar cell designs and underlying principals disclosed herein may be applied in any type of photovoltaic solar power application, such as large scale photovoltaic solar plants, rooftop panels, solar powered electronic devices, and many others.

High efficiency graphene/wide band-gap semiconductor heterojunction solar cells
11296291 · 2022-04-05 · ·

A photovoltaic solar cell apparatus is described herein combining the advantages of several discoveries that address the previously unsolved problem of creating high conversion efficiency solar cells at a low cost. The solar cell designs and underlying principals disclosed herein may be applied in any type of photovoltaic solar power application, such as large scale photovoltaic solar plants, rooftop panels, solar powered electronic devices, and many others.

Bandgap-tunable perovskite materials and methods of making the same

Bandgap-tunable perovskite compositions are provided having the formula CsPb(A).sub.xB.sub.y).sub.3, wherein A and B are each a halogen. The mixed halide perovskite composition has a morphology which suppresses phase segregation to stabilize a tuned bandgap of the mixed halide perovskite composition. For example, the perovskite may be in the form of nanocrystals embedded in a non-perovskite matrix, which, for example, may have the formula Cs.sub.4Pb(A).sub.xB.sub.y).sub.6, wherein A and B are each a halogen. Solar cells and light-emitting diodes comprising the mixed perovskite compositions are also provided.

Bandgap-tunable perovskite materials and methods of making the same

Bandgap-tunable perovskite compositions are provided having the formula CsPb(A).sub.xB.sub.y).sub.3, wherein A and B are each a halogen. The mixed halide perovskite composition has a morphology which suppresses phase segregation to stabilize a tuned bandgap of the mixed halide perovskite composition. For example, the perovskite may be in the form of nanocrystals embedded in a non-perovskite matrix, which, for example, may have the formula Cs.sub.4Pb(A).sub.xB.sub.y).sub.6, wherein A and B are each a halogen. Solar cells and light-emitting diodes comprising the mixed perovskite compositions are also provided.