Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. For example, a method of fabricating a solar cell involves forming a plurality of alternating N-type and P-type semiconductor regions in or above a substrate. The method also involves forming a paste between adjacent ones of the alternating N-type and P-type semiconductor regions. The method also involves curing the paste to form non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions. The method also involves adhering a metal foil to the alternating N-type and P-type semiconductor regions. The method also involves laser ablating through the metal foil in alignment with the locations between the alternating N-type and P-type semiconductor regions to isolate regions of remaining metal foil in alignment with the alternating N-type and P-type semiconductor regions. The non-conductive material regions act as a laser stop during the laser ablating.

A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiO.sub.xN.sub.y) material, where x > y. The second passivation layer includes a first silicon nitride (Si.sub.mN.sub.n) material, where m > n. The third passivation layer includes a second silicon oxynitride (SiO.sub.iN.sub.j) material, where a ratio of i/j∈ [0.97, 7.58].

Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

A method of fabricating solar cell, solar laminate and/or solar module string is provided. The method may include: locating a metal foil over a plurality of semiconductor substrates; exposing the metal foil to laser beam over selected portions of the plurality of semiconductor substrates, wherein exposing the metal foil to the laser beam forms a plurality conductive contact structures having of locally deposited metal portion electrically connecting the metal foil to the semiconductor substrates at the selected portions; and selectively removing portions of the metal foil, wherein remaining portions of the metal foil extend between at least two of the plurality of semiconductor substrates.

The present application relates to the field of solar cells, and in particular to a main-gate-free and high-efficiency back-contact solar cell module, assembly, and a preparation process thereof. The main-gate-free and high-efficiency back-contact solar cell module comprises solar cells and an electrical connection layer, a backlight side of the solar cells having P-electrodes connected to a P-type doping layer and N-electrodes connected to an N-type doping layer, wherein the electrical connection layer comprises a number of small conductive gate lines, part of which are connected to the P-electrodes on the backlight side of the solar cells while the other part of which are connected to the N-electrodes on the backlight side of the solar cells; and, the small conductive gate lines are of a multi-section structure. The present application has the following beneficial effects: the usage of silver paste is decreased, and the cost is reduced; moreover. The arrangement of small conductive gate lines in a multi-section structure reduces the series resistance and the transmission distance of a filling factor, so that the efficiency is improved and the stress on the cells from the small conductive gate lines can be effectively reduced.

Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

A solar cell, having a front side which faces the sun during normal operation, and a back side opposite the front side can include a silicon substrate having doped regions and a polysilicon layer disposed over the doped regions. The solar cell can include a conductive filling formed between a first metal layer and doped regions and through or at least partially through the polysilicon layer, where the conductive filling electrically couples the first metal layer and the doped region. In an embodiment, a second metal layer is formed on the first metal layer, where the first metal layer and the conductive filling electrically couple the doped regions and the second metal layer. In some embodiments, the solar cell can be a front contact solar cell or a back contact solar cell.

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

The disclosure provides a solar cell design featuring p-or-n type GaAs with alternating p-n junction regions on the back-surface of the cell, opposite incident solar irradiance. Various layers of p-or-n type GaAs are interfaced together to collect charge carriers, and a thin layer of AlGaAs is applied to the front and back surfaces to prevent recombination of charge carriers. In some embodiments, the layered an doped structure generally provides an AlGaAs window layer of about 20 nm doped to about 4×(10.sup.18) cm.sup.−3, a GaAs absorption layer of about 2000 nm doped to about 4×(10.sup.17) cm.sup.−3, a GaAs emitter layer of about 150 nm and doped to 1×(10.sup.18) cm.sup.−3, an AlGaAs heterojunction layer of about 40 nm doped to about 3×(10.sup.18) cm.sup.−3, and a GaAs emitter-contact layer of about 20 nm doped to about 1×(10.sup.19) cm.sup.−3. Additionally, AlGaAs BSF layer and GaAs BSF-contact layers each have a depth of about 20 nm and are doped to about 4×(10.sup.18) cm.sup.−3 and 1×(10.sup.19) cm.sup.−3 respectively. The emitter layer, heterojunction layer, and emitter-contact layer are doped to a conductivity type opposite the absorption layer.