Methods and structures for extracting at least one electric parametric testing from a back contact solar cell are provided.

An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

A photovoltaic module and its manufacturing method. The module includes a first support wafer made of sintered silicon and a second layer of single-crystal silicon.

Flat top beam laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, back surface field formation, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

The invention relates to a method for producing doping regions in a semiconductor layer of a semiconductor component, wherein the method includes the following steps: A) implanting a first dopant of a first doping type into at least one implantation region in the semiconductor layer, which implantation region adjoins a first side of the semiconductor layer; B) applying a doping layer, which contains a second dopant of a second doping type, indirectly or directly at least to the first side of the semiconductor layer, wherein the first and the second doping type are opposite; C) by the effect of heat, simultaneously driving the second dopant from the doping layer into the semiconductor layer and performing one or more of the processes of at least partially activating the implanted dopant in the implantation region and/or performing at least partial recovery of crystal damage in the semiconductor layer, which crystal damage was produced by the implantation, and/or driving in the first dopant from the implantation region.

Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming back contact solar cells are provided.

The invention, which discloses a back contact type solar cell module and a preparation method, relates to the technical field of solar cells. The back contact type solar cell module may comprise: N small cell pieces, p+ doped regions and n+ doped regions arranged in a staggered manner being provided on the back surface of the small cell piece, the p+ doped regions of the small cell piece being provided with positive electrode fine grid lines, the n+ doped regions of the small cell piece being provided with negative electrode fine grid lines, and each of the small cell pieces being not provided with a main grid line for collecting currents of the n+ doped regions and the p+ doped regions; (N−1) conductive strips, each of which includes a substrate and conductive patterns provided on the substrate, each of the substrates being provided between two adjacent small cell pieces, and the conductive patterns being used for electrically connecting fine grid lines with opposite polarities on two adjacent small cell pieces at intervals in sequence so as to connect the respective small cell pieces in series. The back contact type solar cell module provided in the implementation mode has a comparatively high efficiency stability, and a low resistance loss on silver grid lines, and the fill factor of the module is high.

A photovoltaic cell structure for converting light energy into electrical energy is provided herein. One of skill will appreciate having, for example, a photovoltaic cell structure configured to increase capture of electron hole pairs. Such a photovoltaic cell structure can include a semiconductor substrate configured with a circuit having a P-N junction: and, a P/P+ junction; wherein, the P-N junction and the P/P+ junction are separated by a maximum distance of no more than 3.5 microns to increase the capture of electron hole pairs by decreasing the distance the holes have to travel for the capture.

A solar cell module includes serially connected solar cells. A solar cell includes a carrier that is attached to the backside of the solar cell. Solar cells are attached to a top cover, and vias are formed through the carriers of the solar cells. A solar cell is electrically connected to an adjacent solar cell in the solar cell module with metal connections in the vias.