A photovoltaic device and method for fabrication include multijunction cells, each cell having a material grown independently from the other and including different band gap energies. An interface is disposed between the cells and configured to wafer bond the cells wherein the cells are configured to be adjacent without regard to lattice mismatch.

Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

A hybrid photovoltaic device (1) comprising a thin film solar cell (2) disposed in a first layer (21) comprising an array of vertically aligned nanowires (25), said nanowires having a junction with a first band gap corresponding to a first spectral range. The nanowires (25) form absorbing regions, and non-absorbing regions are formed between the nanowires. A bulk solar cell (3) s disposed in a second layer (31), positioned below the first layer (21), having a junction with a second band gap, which is smaller than said first band gap and corresponding to a second spectral range. The nanowires are provided in the first layer with a lateral density selected a such that a predetermined portion of an incident photonic wave-front will pass through the non-absorbing regions without absorption in the first spectral range, into the bulk solar cell for absorption in both the first spectral range and the second spectral range.

A hybrid photovoltaic device (1) comprising a thin film solar cell (2) disposed in a first layer (21) comprising an array of vertically aligned nanowires (25), said nanowires having a junction with a first band gap corresponding to a first spectral range. The nanowires (25) form absorbing regions, and non-absorbing regions are formed between the nanowires. A bulk solar cell (3) s disposed in a second layer (31), positioned below the first layer (21), having a junction with a second band gap, which is smaller than said first band gap and corresponding to a second spectral range. The nanowires are provided in the first layer with a lateral density selected a such that a predetermined portion of an incident photonic wave-front will pass through the non-absorbing regions without absorption in the first spectral range, into the bulk solar cell for absorption in both the first spectral range and the second spectral range.

The present disclosure relates to a method for manufacturing a monolithic tandem solar cell in which a perovskite solar cell is laminated and bonded on a silicon solar cell. According to the present disclosure, a first microporous precursor thin film is formed through a sputtering method on a substrate having an unevenly structured texture and then a halide thin film is formed on the first microporous precursor thin film to form a perovskite absorption layer, whereby light reflectance can be reduced and a path of light can be increased, and accordingly a light absorption rate can be increased.

A photoelectric conversion element of an embodiment includes a first electrode, a second electrode, and a light absorbing layer, containing a chalcopyrite-type compound containing at least a group-Ib element, a group-IIIb element, and a group-VIb element, between the first electrode and the second electrode. The group-VIb element includes at least sulfur. An average sulfur atom concentration S1 in a side surface region of the light absorbing layer is higher than an average sulfur atom concentration S2 in an inside region of the light absorbing layer.

A device, system, and method for a multi junction solar cell are described herein. An exemplary multi-solar cell structure can have a substrate having a first surface having a (111) crystalline etched surface. A dielectric layer can be deposited on the first surface of the substrate. A graded buffer layer can be grown on a second surface of the substrate with the second surface having a (100) crystalline surface. A first solar subcell within or on top of the graded buffer layer and a second solar subcell grown on top of the first solar subcell.

A device, system, and method for a multi junction solar cell are described herein. An exemplary multi-solar cell structure can have a substrate having a first surface having a (111) crystalline etched surface. A dielectric layer can be deposited on the first surface of the substrate. A graded buffer layer can be grown on a second surface of the substrate with the second surface having a (100) crystalline surface. A first solar subcell within or on top of the graded buffer layer and a second solar subcell grown on top of the first solar subcell.

A photonic bandgap structure having multiple stacked layers has a thickness from the top of its top layer to the bottom of its bottom layer of less than one micron. Metal conducting layers having negative real dielectric constants are positioned between semiconductor layers having positive dielectric constants. The layers are arranged and stacked, and the thicknesses and materials for the semiconductor layers and conductive layers are selected to realize desired absorption, transmission, and reflection characteristics.