A method of passive cooling for a high concentrating photovoltaic, the high concentrating photovoltaic, includes a photovoltaic receiver, a parabolic dish reflector and a plurality of thermally conductive heat pipes having a direct thermal contact between the receiver and the reflector to transfer excessive heat. The method includes receiving sunlight by the parabolic dish reflector, reflecting the sunlight towards the photovoltaic receiver that converts the sunlight into electricity and heat, transferring the heat through the thermally conductive heat pipes and absorbing the heat by the reflector serving a dual purpose as a heat sink. A reduction in weight and cost is accomplished by incorporating the flat heat pipes.

A method of passive cooling for a high concentrating photovoltaic, the high concentrating photovoltaic, includes a photovoltaic receiver, a parabolic dish reflector and a plurality of thermally conductive heat pipes having a direct thermal contact between the receiver and the reflector to transfer excessive heat. The method includes receiving sunlight by the parabolic dish reflector, reflecting the sunlight towards the photovoltaic receiver that converts the sunlight into electricity and heat, transferring the heat through the thermally conductive heat pipes and absorbing the heat by the reflector serving a dual purpose as a heat sink. A reduction in weight and cost is accomplished by incorporating the flat heat pipes.

A stacked multi-junction solar cell with a metallization comprising a multilayer system, wherein the multi-junction solar cell has a germanium substrate forming a bottom side of the multi-junction solar cell, a germanium subcell, and at least two III-V subcells, the multilayer system of the metallization has a first layer, comprising gold and germanium, a second layer comprising titanium, a third layer, comprising palladium or nickel or platinum, with a layer thickness, and at least one metallic fourth layer, and the multilayer system of the metallization covers at least one first and second surface section and is integrally connected to the first and second surface section, wherein the first surface section is formed by the dielectric insulation layer and the second surface section is formed by the germanium substrate or by a III-V layer.

A multijunction solar cell assembly and its method of manufacture including interconnected first and second discreate semiconductor body subassemblies disposed adjacent and parallel to each other, in the sense of the incoming illumination, each semiconductor body subassembly including first top subcell, and possibly third middle subcells and a bottom solar subcell; wherein the interconnected subassemblies form at least a Three junction solar cell by a series connection being formed between the bottom solar subcell in the first semiconductor body with its at least least two junctions and the bottom solar subcell in the second semiconductor body representing the additional junction.

A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed directly below and adjacent to the upper first solar subcell, and having a second band gap smaller than said first band gap; wherein a light scattering layer is provided below the upper first solar subcell and adjacent to the upper first solar subcell for redirecting the incoming light to be scattered along longer path lengths into the second solar subcell.

A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed directly below and adjacent to the upper first solar subcell, and having a second band gap smaller than said first band gap; wherein a light scattering layer is provided below the upper first solar subcell and adjacent to the upper first solar subcell for redirecting the incoming light to be scattered along longer path lengths into the second solar subcell.

The present embodiment provides a semiconductor element that can generate power with high efficiency and has high durability.

A multilayer junction photoelectric conversion element according to an embodiment comrises: a first electrode; a first photoactive layer including a perovskite semiconductor; a first passivation layer; a first doped layer; a second photoactive layer containing silicon; and a second electrode, in this order. The multilayer junction photoelectric conversion element further comprises a light scattering layer including a plurality of mutually separated silicon alloy layers that penetrate a part of the passivation layer and electrically connect the first photoactive layer and the first doped layer. The element can be manufactured by a method including forming a bottom cell including a second active layer and then forming a first photoactive layer by coating.

The present disclosure relates to a method for manufacturing a device, where the device includes, in order, a metamorphic contact layer, a first metamorphic junction, a metamorphic tunnel junction, and a second metamorphic junction. To produce the device, the manufacturing includes, in order, a first depositing of a buffer layer onto a substrate, a second depositing of the metamorphic contact layer, a third depositing of the first metamorphic junction, a fourth depositing of the metamorphic tunnel junction, a fifth depositing of the second metamorphic junction, and the removing of the buffer layer and the substrate.

Resonant cavity power converters for converting radiation in the wavelength range from 1 micron to 1.55 micron are disclosed. The resonant cavity power converters can be formed from one or more lattice matched GaInNAsSb junctions and can include distributed Bragg reflectors and/or mirrored surfaces for increasing the power conversion efficiency.

Resonant cavity power converters for converting radiation in the wavelength range from 1 micron to 1.55 micron are disclosed. The resonant cavity power converters can be formed from one or more lattice matched GaInNAsSb junctions and can include distributed Bragg reflectors and/or mirrored surfaces for increasing the power conversion efficiency.