A photovoltaic device that includes a p-n junction of first type III-V semiconductor material layers, and a window layer of a second type III-V semiconductor material on the light receiving end of the p-n junction, wherein the second type III-V semiconductor material has a greater band gap than the first type III-V semiconductor material, and the window layer of the photovoltaic device has a cross-sectional area of microscale.

A photovoltaic device that includes a p-n junction of first type III-V semiconductor material layers, and a window layer of a second type III-V semiconductor material on the light receiving end of the p-n junction, wherein the second type III-V semiconductor material has a greater band gap than the first type III-V semiconductor material, and the window layer of the photovoltaic device has a cross-sectional area of microscale.

A transmitter of a wireless power transfer and data communication system comprising a transmitter system including a transmitter housing, one or more high-power laser sources, a laser controller, one or more low-power laser sources, one or more photodiodes, a beam steering system and lens assembly, and a safety system. High-power and low-power beams are directed to corresponding receivers and transceivers of a transceiver system inside a remote receiver system by the controller and the beam steering system and lens assembly. Low-power beams include optical communication to the transceiver system. The photodiodes of the transmitter system receive optical communication from the transceiver system. Low-power beams are co-propagated with and in close proximity to high-power beams substantially along an entire distance between the transmitter housing and the receiver system. The safety system instructs the controller to reduce the high-power sources in response to detected events.

A connector that provides alignment of an optical fiber to a photonic device. The connector has a threaded sleeve, a ferrule cavity, an aperture in optical communication with the ferrule cavity and having a center that is substantially aligned with a center of the ferrule cavity and a device cavity that is configured to receive the photonic device and further in optical communication with the ferrule cavity via the aperture.

A connector that provides alignment of an optical fiber to a photonic device. The connector has a threaded sleeve, a ferrule cavity, an aperture in optical communication with the ferrule cavity and having a center that is substantially aligned with a center of the ferrule cavity and a device cavity that is configured to receive the photonic device and further in optical communication with the ferrule cavity via the aperture.

A multijunction solar cell assembly and its method of manufacture including interconnected first and second discreate semiconductor body subassemblies disposed adjacent and parallel to each other, in the sense of the incoming illumination, each semiconductor body subassembly including first top subcell, and possibly third middle subcells and a bottom solar subcell; wherein the interconnected subassemblies form at least a Three junction solar cell by a series connection being formed between the bottom solar subcell in the first semiconductor body with its at least least two junctions and the bottom solar subcell in the second semiconductor body representing the additional junction.

A multijunction solar cell assembly and its method of manufacture including interconnected first and second discreate semiconductor body subassemblies disposed adjacent and parallel to each other, in the sense of the incoming illumination, each semiconductor body subassembly including first top subcell, and possibly third middle subcells and a bottom solar subcell; wherein the interconnected subassemblies form at least a Three junction solar cell by a series connection being formed between the bottom solar subcell in the first semiconductor body with its at least least two junctions and the bottom solar subcell in the second semiconductor body representing the additional junction.

A method of manufacturing an inverted metamorphic multijunction solar cell by providing a growth semiconductor substrate with a top surface having a doping in the range of 110.sup.18 to 110.sup.20 charge carriers/cm.sup.3; depositing a window layer for a top (light facing) subcell subsequently to be formed directly on the top surface of the growth substrate; depositing a sequence of layers of semiconductor material forming a solar cell directly on the window layer; providing a surrogate substrate on the top surface of the sequence of layers of semiconductor material, and removing a portion of the semiconductor substrate so that only the high doped surface portion of the substrate, having a thickness in the range of 0.5 m to 10 m, remains.

A method of manufacturing an inverted metamorphic multijunction solar cell by providing a growth semiconductor substrate with a top surface having a doping in the range of 110.sup.18 to 110.sup.20 charge carriers/cm.sup.3; depositing a window layer for a top (light facing) subcell subsequently to be formed directly on the top surface of the growth substrate; depositing a sequence of layers of semiconductor material forming a solar cell directly on the window layer; providing a surrogate substrate on the top surface of the sequence of layers of semiconductor material, and removing a portion of the semiconductor substrate so that only the high doped surface portion of the substrate, having a thickness in the range of 0.5 m to 10 m, remains.

A solar cell including a base region, a back surface field layer and a delta doping layer positioned between the base region and the back surface field layer.