A space-qualified solar cell assembly comprising a plurality of space-qualified solar cells mounted on a support, the support comprising a plurality of conductive vias extending from the top surface to the rear surface of the support. Each one of the pluralities of space-qualified solar cells is placed on the top surface with the first contact of a first polarity of the space-qualified solar cell electrically connected to the first conductive via. A second contact of a second polarity of each space-qualified solar cell can be connected to a second conductive via so that the first and second conductive portions form terminals of opposite conductivity type. The space-qualified solar cells on the module can be interconnected to form a string or an electrical series and/or parallel connection by suitably interconnecting the terminal pads of the vias on the back side of the module.

A space-qualified solar cell assembly comprising a plurality of space-qualified solar cells mounted on a support, the support comprising a plurality of conductive vias extending from the top surface to the rear surface of the support. Each one of the pluralities of space-qualified solar cells is placed on the top surface with the first contact of a first polarity of the space-qualified solar cell electrically connected to the first conductive via. A second contact of a second polarity of each space-qualified solar cell can be connected to a second conductive via so that the first and second conductive portions form terminals of opposite conductivity type. The space-qualified solar cells on the module can be interconnected to form a string or an electrical series and/or parallel connection by suitably interconnecting the terminal pads of the vias on the back side of the module.

A method for making a photovoltaic device is provided that includes the steps of providing a silicon substrate having a complementary metal-oxide semiconductor (CMOS); bonding a first layer of silicon oxide to a second layer of silicon oxide wherein the bonded layers are deposited on the silicon substrate; and forming a III-V photovoltaic cell on a side of the bonded silicon oxide layers opposite the silicon substrate, wherein when the III-V photovoltaic cell is exposed to radiation, the III-V photovoltaic cell generates a current that powers a memory erasure device to cause an alteration of a memory state of a memory cell in an integrated circuit.

A method for making a photovoltaic device is provided that includes the steps of providing a silicon substrate having a complementary metal-oxide semiconductor (CMOS); bonding a first layer of silicon oxide to a second layer of silicon oxide wherein the bonded layers are deposited on the silicon substrate; and forming a III-V photovoltaic cell on a side of the bonded silicon oxide layers opposite the silicon substrate, wherein when the III-V photovoltaic cell is exposed to radiation, the III-V photovoltaic cell generates a current that powers a memory erasure device to cause an alteration of a memory state of a memory cell in an integrated circuit.

A method of forming a photovoltaic device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands.

A method of forming a photovoltaic device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands.

A laser light collecting assembly for a wireless power receiver. The assembly includes a compound parabolic concentrator (CPC) mirror and an optical to electrical converter. The CPC minor has curved internal walls that define an inlet aperture and connect the inlet aperture to an outlet aperture. The inlet aperture may be larger than the outlet aperture. The internal walls may focus a majority of the laser light entering the inlet aperture to the outlet aperture. The optical to electrical converter may be positioned adjacent to the outlet aperture and configured to receive the laser light exiting the outlet aperture so as to convert optical power in the laser light to electrical power.

The present disclosure provides a photodiode which maintains a photodiode characteristic even after the metal-assisted chemical etching and uses a metal-semiconductor structure having low reflectance and high conductance, a manufacturing method thereof, and a solar cell using the same. The photodiode of the present disclosure includes a semiconductor substrate with a low reflective and high conductive surface which has a selectively etched electrode formation area and a high conductive electrode formed by placing a metal catalyst used for a metal-assisted chemical etching process for forming an antireflection semiconductor substrate in an etching area of the antireflection semiconductor substrate.

A method of forming a photovoltaic device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands.

A method of forming a photovoltaic device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands.