Patent classifications
H01L31/0693
METHOD FOR PRODUCING ELECTRONIC DEVICE
The present invention is a method for producing an electronic device having a drive circuit including a solar cell structure, the method including the steps of: obtaining a bonded wafer by bonding a first wafer having a plurality of independent solar cell structures including a compound semiconductor, the solar cell structures being formed on a starting substrate by epitaxial growth, and a second wafer having a plurality of independent drive circuits formed, so that the plurality of solar cell structures and the plurality of drive circuits are respectively superimposed; wiring the bonded wafer so that electric power can be supplied from the plurality of solar cell structures to the plurality of drive circuits respectively; and producing an electronic device having the drive circuit including the solar cell structure by dicing the bonded wafer. This provides a method for producing an electronic device including a drive circuit and a solar cell structure in one chip and having a suppressed production cost.
Inverted metamorphic multijunction solar cell
A solar cell comprising an epitaxial sequence of layers of semiconductor material thrilling at least a first and second solar subcells; a semiconductor contact layer disposed on the bottom surface of the second solar subcell; a reflective metal layer disposed below the semiconductor contact layer such that the reflectivity of the reflective metal layer is greater than 80% in the wavelength range 850 to 2000 nm, for reflecting light back into the second solar subcell.
Transmitter assembly for free space power transfer and data communication system
A transmitter of a wireless power transfer and data communication system comprising a transmitter system including a transmitter housing, one or more high-power laser sources, a laser controller, one or more low-power laser sources, one or more photodiodes, a beam steering system and lens assembly, and a safety system. High-power and low-power beams are directed to corresponding receivers and transceivers of a transceiver system inside a remote receiver system by the controller and the beam steering system and lens assembly. Low-power beams include optical communication to the transceiver system. The photodiodes of the transmitter system receive optical communication from the transceiver system. Low-power beams are co-propagated with and in close proximity to high-power beams substantially along an entire distance between the transmitter housing and the receiver system. The safety system instructs the controller to reduce the high-power sources in response to detected events.
Multijunction solar cell assembly
A multijunction solar cell assembly and its method of manufacture including interconnected first and second discreate semiconductor body subassemblies disposed adjacent and parallel to each other, in the sense of the incoming illumination, each semiconductor body subassembly including first top subcell, and possibly third middle subcells and a bottom solar subcell; wherein the interconnected subassemblies form at least a Three junction solar cell by a series connection being formed between the bottom solar subcell in the first semiconductor body with its at least least two junctions and the bottom solar subcell in the second semiconductor body representing the additional junction.
Multijunction solar cell assembly
A multijunction solar cell assembly and its method of manufacture including interconnected first and second discreate semiconductor body subassemblies disposed adjacent and parallel to each other, in the sense of the incoming illumination, each semiconductor body subassembly including first top subcell, and possibly third middle subcells and a bottom solar subcell; wherein the interconnected subassemblies form at least a Three junction solar cell by a series connection being formed between the bottom solar subcell in the first semiconductor body with its at least least two junctions and the bottom solar subcell in the second semiconductor body representing the additional junction.
Optical systems fabricated by printing-based assembly
Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.
Optical systems fabricated by printing-based assembly
Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.
Betavoltaics with absorber layer containing coated scintillating particles
A beta-voltaic device made up of silica covered scintillating particles incorporated within an isotope absorbing layer to produce an improved power source. Lost beta particles are converted to UV light which is also converted to power in a beta-voltaic converter. The addition of the scintillating particles effectively increases the power efficiency of a BV device while maintaining the slim profile and smaller size of the power source. This arrangement makes possible implementation in space, defense, intelligence, medical implants, marine biology and other applications.
Betavoltaics with absorber layer containing coated scintillating particles
A beta-voltaic device made up of silica covered scintillating particles incorporated within an isotope absorbing layer to produce an improved power source. Lost beta particles are converted to UV light which is also converted to power in a beta-voltaic converter. The addition of the scintillating particles effectively increases the power efficiency of a BV device while maintaining the slim profile and smaller size of the power source. This arrangement makes possible implementation in space, defense, intelligence, medical implants, marine biology and other applications.
Focused energy photovoltaic cell
A photovoltaic device that includes a p-n junction of first type III-V semiconductor material layers, and a window layer of a second type III-V semiconductor material on the light receiving end of the p-n junction, wherein the second type III-V semiconductor material has a greater band gap than the first type III-V semiconductor material, and the window layer of the photovoltaic device has a cross-sectional area of microscale.