The photoelectric conversion device includes a quantum dot accumulation zone, a base layer having current collecting properties which is disposed on at least one major surface of the quantum dot accumulation zone, and a plurality of columnar carrier collection zones, each extending from the base layer into the quantum dot accumulation zone and having an open end. Each of the carrier collection zones is composed mainly of metal oxide. An open end part has a higher mole ratio of oxygen to metal than a body part other than the open end part.

The photoelectric conversion device includes a quantum dot accumulation zone, a base layer having current collecting properties which is disposed on at least one major surface of the quantum dot accumulation zone, and a plurality of columnar carrier collection zones, each extending from the base layer into the quantum dot accumulation zone and having an open end. Each of the carrier collection zones is composed mainly of metal oxide. An open end part has a higher mole ratio of oxygen to metal than a body part other than the open end part.

The invention relates to a multi-junction device comprising a) a first photoactive region comprising a layer of a first photoactive material, b) a second photoactive region comprising a layer of a second photoactive material, and c) a charge recombination layer disposed between the first and second photoactive regions, wherein the charge recombination layer comprises a charge recombination layer material, wherein one of the first and second photoactive materials comprises at least one A/M/X material; wherein the other of the first and second photoactive materials comprises at least one A/M/X material or a compound which is a photoactive semiconductor other than an A/M/X material; wherein each A/M/X material is a crystalline compound of formula (I) [A].sub.a[M].sub.b[X].sub.c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18; and wherein the charge recombination layer material has a refractive index, η(λ), at a wavelength, λ, of at least 2, wherein λ is a wavelength of from 500 nm to 1200 nm.

The invention relates to a multi-junction device comprising a) a first photoactive region comprising a layer of a first photoactive material, b) a second photoactive region comprising a layer of a second photoactive material, and c) a charge recombination layer disposed between the first and second photoactive regions, wherein the charge recombination layer comprises a charge recombination layer material, wherein one of the first and second photoactive materials comprises at least one A/M/X material; wherein the other of the first and second photoactive materials comprises at least one A/M/X material or a compound which is a photoactive semiconductor other than an A/M/X material; wherein each A/M/X material is a crystalline compound of formula (I) [A].sub.a[M].sub.b[X].sub.c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18; and wherein the charge recombination layer material has a refractive index, η(λ), at a wavelength, λ, of at least 2, wherein λ is a wavelength of from 500 nm to 1200 nm.

The present invention refers to a photovoltaic cell (1) comprising a heterojunction with a base layer (L4, L4′, L4″) made from an Aluminium-Ar-senic-basedalloy and an emitter layer (L3, L3′) made from an Indium-Phosphorous based alloy wherein the emitter layer (L3, L3′) has a thickness smaller than 100 nm and acts as a passivation layer to prevent oxidation of the base layer and reduces surface recombination (L4, L4′, L4″).

The present invention refers to a photovoltaic cell (1) comprising a heterojunction with a base layer (L4, L4′, L4″) made from an Aluminium-Ar-senic-basedalloy and an emitter layer (L3, L3′) made from an Indium-Phosphorous based alloy wherein the emitter layer (L3, L3′) has a thickness smaller than 100 nm and acts as a passivation layer to prevent oxidation of the base layer and reduces surface recombination (L4, L4′, L4″).

A multi-junction solar cell module of an embodiment includes: a first solar cell module disposed on a light incident side and including a plurality of first solar cells and a first connection wiring electrically connecting the plurality of the first solar cells; a second solar cell module including a plurality of second solar cells and a second connection wiring electrically connecting the plurality of the second solar cells; and an adhesive layer between the first solar cell module and the second solar cell module.

A multi-junction solar cell module of an embodiment includes: a first solar cell module disposed on a light incident side and including a plurality of first solar cells and a first connection wiring electrically connecting the plurality of the first solar cells; a second solar cell module including a plurality of second solar cells and a second connection wiring electrically connecting the plurality of the second solar cells; and an adhesive layer between the first solar cell module and the second solar cell module.

A photovoltaic device and method of manufacture of a photovoltaic device including an assembly of at least two photovoltaic cells; and a lamination material inserted between each photovoltaic cell, each photovoltaic cell including: two current output terminals; at least one photovoltaic junction; current collection buses; and connection strips extending from the current collection buses to the current output terminals, all the current output terminals being placed on a single surface of the photovoltaic device is provided.

A photovoltaic device and method of manufacture of a photovoltaic device including an assembly of at least two photovoltaic cells; and a lamination material inserted between each photovoltaic cell, each photovoltaic cell including: two current output terminals; at least one photovoltaic junction; current collection buses; and connection strips extending from the current collection buses to the current output terminals, all the current output terminals being placed on a single surface of the photovoltaic device is provided.