A photoelectric conversion element of an embodiment includes a first electrode, a second electrode, and a light absorbing layer, containing a chalcopyrite-type compound containing at least a group-Ib element, a group-IIIb element, and a group-VIb element, between the first electrode and the second electrode. The group-VIb element includes at least sulfur. An average sulfur atom concentration S1 in a side surface region of the light absorbing layer is higher than an average sulfur atom concentration S2 in an inside region of the light absorbing layer.

Architectures for tandem solar cell including two thin films forming a top layer and a bottom layer. Such cells can be bi-facial. Exemplary materials used for the top layer are CIGS (CGS), perovskites (Sn and Ge), amorphous silicon (a-Si), copper oxide, tin sulfide, CZTS and III-V materials. For the bottom layer an inorganic film such as either silicon or germanium may be used. In general, the architecture includes of a glass, plastic or metal substrate and a buffer layer, either an oxide insulator or nitride conductor.

Provided is an energy harvesting device, including a solar cell including at least one active layer for receiving a first range of electromagnetic frequencies, at least one layer including antenna structures for receiving RF energy and formed on a first side of the solar cell, and at least one semiconductor for absorbing IR energy, and formed on a second side of the solar cell opposite the first side.

The present disclosure provides a method of manufacturing a solar cell comprising: providing a semiconductor growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell; applying a metal contact layer over said sequence of layers; and affixing the surface of a permanent supporting substrate composed of a carbon fiber reinforced polymer utilizing a conductive polyimide binding resin directly over said metal contact layer and permanently bonding it thereto by a thermocompressive technique.

An optoelectronic semiconductor device is disclosed. The optoelectronic device comprises a plurality of stacked p-n junctions. The optoelectronic semiconductor device includes a n-doped layer disposed below the p-doped layer to form a p-n layer such that electric energy is created when photons are absorbed by the p-n layer. Recesses are formed on top of the p-doped layer at the top of the plurality of stacked p-n junctions. The junctions create an offset and an interface layer is formed on top of the p-doped layer at the top of the plurality stacked p-n junctions. The optoelectronic semiconductor device also includes a window layer disposed below the plurality stacked p-n junctions. In another aspect, one or more optical filters are inserted into a multi-junction photovoltaic device to enhance its efficiency through photon recycling.

A method of manufacturing a solar cell assembly by providing a substrate; depositing on the substrate a sequence of layers of semiconductor material forming a solar cell; mounting a permanent laminate supporting member with a thickness of 50 microns or less on top of the sequence of layers; utilizing the laminate structure for supporting the epitaxial sequence of layers of semiconductor material forming a solar cell during the processes of removing the substrate and depositing and lithographically patterning a plurality of metal grid lines disposed on the top surface of the first solar subcell, and attaching a cover glass over at least the grid lines of the solar cell.

A method of manufacturing a solar cell assembly by providing a substrate; depositing on the substrate a sequence of layers of semiconductor material forming a solar cell; mounting a permanent laminate supporting member with a thickness of 50 microns or less on top of the sequence of layers; utilizing the laminate structure for supporting the epitaxial sequence of layers of semiconductor material forming a solar cell during the processes of removing the substrate and depositing and lithographically patterning a plurality of metal grid lines disposed on the top surface of the first solar subcell, and attaching a cover glass over at least the grid lines of the solar cell.

A method of manufacturing a solar cell comprising: providing a growth substrate depositing on the growth substrate an epitaxial sequence of layers of semiconductor material forming at least a first and second solar subcells depositing a semiconductor contact layer on top of the second solar subcell depositing a reflective metal layer over said semiconductor contact layer such that the reflectivity of the reflective metal layer is greater than 80% in the wavelength range 850 to 2000 nm depositing a contact metal layer composed on said reflective metal layer mounting and bonding a supporting substrate on top of the contact metal layer and removing the growth substrate.

A method of manufacturing a solar cell comprising: providing a growth substrate depositing on the growth substrate an epitaxial sequence of layers of semiconductor material forming at least a first and second solar subcells depositing a semiconductor contact layer on top of the second solar subcell depositing a reflective metal layer over said semiconductor contact layer such that the reflectivity of the reflective metal layer is greater than 80% in the wavelength range 850 to 2000 nm depositing a contact metal layer composed on said reflective metal layer mounting and bonding a supporting substrate on top of the contact metal layer and removing the growth substrate.

A multi-junction solar cell of an embodiment includes a first solar cell including a first photoelectric conversion device, a second solar cell including a plurality of second photoelectric conversion devices connected in series and having a back contact, and an insulating layer between the first solar cell and the second solar cell. A device isolation region is provided between the second photoelectric conversion devices connected in series.