Provided are a solar cell and a method of manufacturing the same. The solar cell includes a substrate, a first electrode on the substrate, a second electrode on the first electrode, and at least one semiconductor layer interposed between the first and second electrodes, and a first connection layer interposed between the first electrode and the semiconductor layer and electrically connecting the first and second electrodes to each other. The first connection layer includes a plurality of two-dimensional layers vertically extending from a top surface of the first electrode to a bottom surface of the semiconductor layer. The two-dimensional layers include a metal compound.

Provided are a solar cell and a method of manufacturing the same. The solar cell includes a substrate, a first electrode on the substrate, a second electrode on the first electrode, and at least one semiconductor layer interposed between the first and second electrodes, and a first connection layer interposed between the first electrode and the semiconductor layer and electrically connecting the first and second electrodes to each other. The first connection layer includes a plurality of two-dimensional layers vertically extending from a top surface of the first electrode to a bottom surface of the semiconductor layer. The two-dimensional layers include a metal compound.

A method for producing a CdTe solar cell is provided, wherein at least the following layers are deposited on a glass substrate within a vacuum chamber: a TCO layer acting as a frontal contact; at least one CdTe layer; a thin layer of a chlorine-containing compound, and an electrically conductive layer acting as a return contact. Here, a maximally 20 nm thick passivation layer made from CdS, in which chemically non-bound oxygen is embedded, is deposited on the TCO layer prior to deposition of at least one CdTe-layer.

A photovoltaic cell can include a dopant in contact with a semiconductor layer.

A photovoltaic cell can include a dopant in contact with a semiconductor layer.

Photovoltaic devices, and methods of making the same, are described.

A perovskite-silicon tandem cell capable of absorbing solar radiation with energy lower than that of 1.12 eV, i.e., the bandgap of crystalline silicon—corresponding to the wavelength of 1100 nm. Ho.sup.3+ can absorb photons of wavelength range 1120 to 1190 nm, Tm.sup.3+, 1190 to 1260 nm, and Er.sup.3+, 1145 to 1580 nm, but up-conversion can be achieved using Ho.sup.3+, Tm.sup.3+, and Er.sup.3+-doped metal oxide, such as ZrO.sub.2, in perovskite-silicon tandem solar cells. Doped metal oxides, such as ZrO.sub.2 can also work as selective contacts. Such perovskite-silicon tandem structures can achieve over 30% solar energy conversion efficiency.

A perovskite-silicon tandem cell capable of absorbing solar radiation with energy lower than that of 1.12 eV, i.e., the bandgap of crystalline silicon—corresponding to the wavelength of 1100 nm. Ho.sup.3+ can absorb photons of wavelength range 1120 to 1190 nm, Tm.sup.3+, 1190 to 1260 nm, and Er.sup.3+, 1145 to 1580 nm, but up-conversion can be achieved using Ho.sup.3+, Tm.sup.3+, and Er.sup.3+-doped metal oxide, such as ZrO.sub.2, in perovskite-silicon tandem solar cells. Doped metal oxides, such as ZrO.sub.2 can also work as selective contacts. Such perovskite-silicon tandem structures can achieve over 30% solar energy conversion efficiency.

Described herein is a diffusion-based ex-situ group V element doping method in the CdCl.sub.2 heat-treated polycrystalline CdTe film. The ex-situ doping using group V halides, such as PCl.sub.3, AsCl.sub.3, SbCl.sub.3, or BiCl.sub.3, demonstrated a promising PCE of ˜18% and long-term light soaking stability in CdSe/CdTe and CdS/CdTe devices with decent carrier concentration>10.sup.15 cm.sup.−3. This ex-situ solution or vapor process can provide a low-cost alternative pathway for effective doping of As, as well as P, Sb, and Bi, in CdTe solar cells with limited deviation from the current CdTe manufacturing process.

A method for preparing a solar cell, includes: forming a first electrode on a substrate; forming a light absorbing layer on the first electrode; and forming a second electrode on the light absorbing layer, wherein the method further comprises forming an impurity material layer including an impurity element on the light absorbing layer adjacent to the first electrode or the second electrode in any one side or both sides thereof, and forming a doping layer by diffusing the impurity element into a portion of the light absorbing layer.