Patent classifications
H01L31/073
Schottky UV solar cell
Optically transmissive UV solar cells may be coupled to glass substrates, for example windows, in order to generate electricity while still providing suitable optical behavior for the window. The UV solar cells may be utilized to power electrochromic components coupled to the window to adjust or vary the transmissivity of the window. The UV solar cells may utilize a Schottky ZnO/ZnS heterojunction.
Schottky UV solar cell
Optically transmissive UV solar cells may be coupled to glass substrates, for example windows, in order to generate electricity while still providing suitable optical behavior for the window. The UV solar cells may be utilized to power electrochromic components coupled to the window to adjust or vary the transmissivity of the window. The UV solar cells may utilize a Schottky ZnO/ZnS heterojunction.
Photovoltaic devices and method of making
Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
Photovoltaic devices and method of making
Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
MULTIJUNCTION SOLAR CELLS ON BULK GeSi SUBSTRATE
A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.
Solar cell module
A solar cell module includes a plurality of compound semiconductor solar cells each including a compound semiconductor substrate, a first electrode part on a front surface of the compound semiconductor substrate, an insulating substrate positioned at a back surface of the compound semiconductor substrate, a second electrode part positioned between the back surface of the compound semiconductor substrate and a front surface of the insulating substrate, and an insulating adhesive attaching the insulating substrate to the second electrode part; a conductive connection member electrically connecting two adjacent compound semiconductor solar cells to each other; a conductive adhesive attaching the conductive connection member to a corresponding electrode part of the compound semiconductor solar cell; a front substrate positioned on the compound semiconductor solar cells; and a back substrate positioned below the compound semiconductor solar cells.
Solar cell module
A solar cell module includes a plurality of compound semiconductor solar cells each including a compound semiconductor substrate, a first electrode part on a front surface of the compound semiconductor substrate, an insulating substrate positioned at a back surface of the compound semiconductor substrate, a second electrode part positioned between the back surface of the compound semiconductor substrate and a front surface of the insulating substrate, and an insulating adhesive attaching the insulating substrate to the second electrode part; a conductive connection member electrically connecting two adjacent compound semiconductor solar cells to each other; a conductive adhesive attaching the conductive connection member to a corresponding electrode part of the compound semiconductor solar cell; a front substrate positioned on the compound semiconductor solar cells; and a back substrate positioned below the compound semiconductor solar cells.
Multijunction solar cells on bulk GeSi substrate
A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.
Method of reclaiming cadmium and tellurium from CdTe for CdTe photovoltaic modules
A method of reclaiming cadmium material from photovoltaic (PV) modules is provided. The method includes submerging one or more portions of a PV module in a solution including non-distilled water, wherein the one or more portions of the PV module are submerged until cadmium material present on the PV module dissolves into the solution, boiling the solution until the dissolved cadmium material precipitates, and collecting the precipitated cadmium material.
CATHODE OF SOLAR UNIT AND METHOD FOR MANUFACTURING THEREOF, AND SOLAR CELL
A cathode of a solar unit and a solar cell including thereof are provided. The cathode of solar unit includes a film which is formed by curing a composition, and a pixel electrode which is formed on the film; wherein the composition includes conducting polymer, curing material, ionic liquid and phosphorene, wherein the weight ratio of the phosphorene to the sum of the conducting polymer, the curing material and the ionic liquid is about 2%10%.