A process for manufacturing a multilayered thin film, includes: forming a photovoltaic conversion layer, comprising Cu.sub.2O as a main component, on a first transparent electrode; and placing, under a first atmosphere at an oxygen level of from 5.0×10.sup.−8 [g/L] to 5.0×10.sup.−5 [g/L] for 1 h to 1600 h, a member having the photovoltaic conversion layer formed on the first transparent electrode.

A multijunction solar cell including a growth substrate; a graded interlayer disposed over the growth substrate, a plurality of subcells disposed over the graded interlayer including a second solar subcell disposed over and lattice mismatched with respect to the growth substrate, and at least a third solar subcell disposed over the second subcell; the grading interlayer including a plurality of N step-graded sublayers (where N is an integer and the value of N is 1<N<10), wherein each successive sublayer has an incrementally greater lattice constant than the sublayer below it and grown in such a manner that each sublayer is fully relaxed, a distributed Bragg reflector (DBR) layer over the grading interlayer and an upper solar subcell disposed over the third solar subcell, a band gap in the range of 1.95 to 2.20 eV, and composed of a semiconductor compound including at least indium, aluminum and phosphorus.

A multijunction solar cell including a growth substrate; a graded interlayer disposed over the growth substrate, a plurality of subcells disposed over the graded interlayer including a second solar subcell disposed over and lattice mismatched with respect to the growth substrate, and at least a third solar subcell disposed over the second subcell; the grading interlayer including a plurality of N step-graded sublayers (where N is an integer and the value of N is 1<N<10), wherein each successive sublayer has an incrementally greater lattice constant than the sublayer below it and grown in such a manner that each sublayer is fully relaxed, a distributed Bragg reflector (DBR) layer over the grading interlayer and an upper solar subcell disposed over the third solar subcell, a band gap in the range of 1.95 to 2.20 eV, and composed of a semiconductor compound including at least indium, aluminum and phosphorus.

Integrated circuits described herein implement an x-input logic gate. The integrated circuit includes a plurality of Schottky diodes that includes x Schottky diodes and a plurality of source-follower transistors that includes x source-follower transistors. Each respective source-follower transistor of the plurality of source-follower transistors includes a respective gate node that is coupled to a respective Schottky diode. A first source-follower transistor of the plurality of source-follower transistors is connected serially to a second source-follower transistor of the plurality of source-follower transistors.

Integrated circuits described herein implement an x-input logic gate. The integrated circuit includes a plurality of Schottky diodes that includes x Schottky diodes and a plurality of source-follower transistors that includes x source-follower transistors. Each respective source-follower transistor of the plurality of source-follower transistors includes a respective gate node that is coupled to a respective Schottky diode. A first source-follower transistor of the plurality of source-follower transistors is connected serially to a second source-follower transistor of the plurality of source-follower transistors.

A multijunction solar cell includes a base substrate comprising a Group IV semiconductor and a dopant of a first carrier type. A patterned emitter is formed at a first surface of the base substrate. The patterned emitter comprises a plurality of well regions doped with a dopant of a second carrier type in the Group IV semiconductor. The base substrate including the patterned emitter form a first solar subcell. The multijunction solar cell further comprises an upper structure comprising one or more additional solar subcells over the first solar subcell. Methods of making a multijunction solar cell are also described.

A multijunction solar cell includes a base substrate comprising a Group IV semiconductor and a dopant of a first carrier type. A patterned emitter is formed at a first surface of the base substrate. The patterned emitter comprises a plurality of well regions doped with a dopant of a second carrier type in the Group IV semiconductor. The base substrate including the patterned emitter form a first solar subcell. The multijunction solar cell further comprises an upper structure comprising one or more additional solar subcells over the first solar subcell. Methods of making a multijunction solar cell are also described.

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

There is provided a method of producing a photovoltaic device comprising a photoactive region comprising a layer of perovskite material, wherein the layer of perovskite material is disposed on a surface that has a roughness average (R.sub.a) or root mean square roughness (R.sub.rms) of greater than or equal to 50 nm. The method comprises using vapour deposition to deposit a substantially continuous and conformal solid layer comprising one or more initial precursor compounds of the perovskite material, and subsequently treating the solid layer with one or more further precursor compounds to form a substantially continuous and conformal solid layer of the perovskite material on the rough surface. There is also provided a photovoltaic device comprising a photoactive region comprising a layer of perovskite material disposed using the method.