Patent classifications
H01L31/076
Back contact layer for photovoltaic cells
A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.
Back contact layer for photovoltaic cells
A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.
COLOR TANDEM PHOTOVOLTAIC DEVICE
A color tandem photovoltaic device includes a bottom cell, an optical reflective layer, a series connection layer, and a top cell. The series connection layer connects the bottom cell and the top cell; the optical reflective layer is located between the bottom cell and the top cell such that the color tandem photovoltaic device presents color.
COLOR TANDEM PHOTOVOLTAIC DEVICE
A color tandem photovoltaic device includes a bottom cell, an optical reflective layer, a series connection layer, and a top cell. The series connection layer connects the bottom cell and the top cell; the optical reflective layer is located between the bottom cell and the top cell such that the color tandem photovoltaic device presents color.
Photoelectrochemical cell, system and process for light-driven production of hydrogen and oxygen with a photoelectrochemical cell, and process for producing the photoelectrochemical cell
The invention relates to a photoelectrochemical cell 100 for light-driven production of hydrogen and oxygen, especially from water or another electrolyte based on aqueous solution, having a photoelectric layer structure 1 and an electrochemical layer structure 2 in a layer construction 40, wherethe photoelectric layer structure 1 for absorption of light 3 uninfluenced by the electrolyte 10 forms a front side 41 of the layer structure 40, andthe electrochemical layer structure 2, for accommodation of the electrolyte 10, forms a reverse side 42 of the layer construction 40, anda conductive and corrosion-inhibiting coupling layer 13 forms electrical contact between the photoelectric layer structure 1 and the electrochemical layer structure 2 in the layer construction 40, wherethe electrochemical layer structure 2 has an electrode structure of a front electrode 21 and an electrode structure of a rear electrode 22, between which is arranged an ion exchange layer 61 such that an integrated layer construction 40 is formed with the ion exchange layer 61 in contact with the electrode structure of the front electrode 21 formed for conversion of the electrolyte 10 and/or with the electrode structure of the rear electrode 22.
Photoelectrochemical cell, system and process for light-driven production of hydrogen and oxygen with a photoelectrochemical cell, and process for producing the photoelectrochemical cell
The invention relates to a photoelectrochemical cell 100 for light-driven production of hydrogen and oxygen, especially from water or another electrolyte based on aqueous solution, having a photoelectric layer structure 1 and an electrochemical layer structure 2 in a layer construction 40, wherethe photoelectric layer structure 1 for absorption of light 3 uninfluenced by the electrolyte 10 forms a front side 41 of the layer structure 40, andthe electrochemical layer structure 2, for accommodation of the electrolyte 10, forms a reverse side 42 of the layer construction 40, anda conductive and corrosion-inhibiting coupling layer 13 forms electrical contact between the photoelectric layer structure 1 and the electrochemical layer structure 2 in the layer construction 40, wherethe electrochemical layer structure 2 has an electrode structure of a front electrode 21 and an electrode structure of a rear electrode 22, between which is arranged an ion exchange layer 61 such that an integrated layer construction 40 is formed with the ion exchange layer 61 in contact with the electrode structure of the front electrode 21 formed for conversion of the electrolyte 10 and/or with the electrode structure of the rear electrode 22.
TYPE IV SEMICONDUCTOR BASED HIGH VOLTAGE LATERALLY STACKED MULTIJUNCTION PHOTOVOLTAIC CELL
A method of forming a photovoltaic device that includes ion implanting a first conductivity type dopant into first regions of a semiconductor layer of an SOI substrate, wherein the first regions are separated by a first pitch; and ion implanting a second conductivity type dopant into second regions of the semiconductor layer of the SOI substrate. The second regions are separated by a second pitch. Each second conductivity type implanted region of the second regions is in direct contact with first conductivity type implanted region of the first regions to provide a plurality of p-n junctions, and adjacent p-n junctions are separated by an intrinsic portion of the semiconductor layer to provide P-I-N cells that are horizontally oriented.
TYPE IV SEMICONDUCTOR BASED HIGH VOLTAGE LATERALLY STACKED MULTIJUNCTION PHOTOVOLTAIC CELL
A method of forming a photovoltaic device that includes ion implanting a first conductivity type dopant into first regions of a semiconductor layer of an SOI substrate, wherein the first regions are separated by a first pitch; and ion implanting a second conductivity type dopant into second regions of the semiconductor layer of the SOI substrate. The second regions are separated by a second pitch. Each second conductivity type implanted region of the second regions is in direct contact with first conductivity type implanted region of the first regions to provide a plurality of p-n junctions, and adjacent p-n junctions are separated by an intrinsic portion of the semiconductor layer to provide P-I-N cells that are horizontally oriented.
Manufacturing semiconductor-based multi-junction photovoltaic devices
Manufacture of multi junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields, greater efficiency, and lower costs. Certain solar cells may be from a different manufacturing processes and further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.
Manufacturing semiconductor-based multi-junction photovoltaic devices
Manufacture of multi junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields, greater efficiency, and lower costs. Certain solar cells may be from a different manufacturing processes and further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.