Disclosed are a solar cell and a tandem solar cell, and the solar cell includes a first conductive layer, a first carrier transport layer, a perovskite absorption layer, and a second conductive layer stacked along a first direction. The solar cell further includes a perovskite absorption layer including a bonding matrix and multiple monocrystal perovskite particles arranged in the bonding matrix, where the bonding matrix includes a first side and a second side opposite to the first side. At least some of the multiple monocrystal perovskite particles has first convex surfaces and second convex surfaces, the first convex surfaces protrude out of the first side and the second convex surfaces protrude out of the second side. The solar cell is at least beneficial for improving the stability and photoelectric conversion ability of the perovskite solar cell.

A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

A heterojunction cell and a method for preparing same. The heterojunction cell comprises: a semiconductor substrate layer; and an intrinsic semiconductor composite layer, wherein the intrinsic semiconductor composite layer is located on the surface of at least one side of the semiconductor substrate layer, and the intrinsic semiconductor composite layer comprises: a bottom intrinsic layer; and a wide-band-gap intrinsic layer, which is located on the surface of the side of the bottom intrinsic layer that is away from the semiconductor substrate layer, the band gap of the wide-band-gap intrinsic layer being greater than the band gap of the bottom intrinsic layer. The band gap of a wide-band-gap intrinsic layer is larger, and when sunlight irradiates a heterojunction cell, photons, the energy of which is less than that of the band gap of the wide-band-gap intrinsic layer, cannot be subjected to parasitic absorption.

A heterojunction cell and a method for preparing same. The heterojunction cell comprises: a semiconductor substrate layer; and an intrinsic semiconductor composite layer, wherein the intrinsic semiconductor composite layer is located on the surface of at least one side of the semiconductor substrate layer, and the intrinsic semiconductor composite layer comprises: a bottom intrinsic layer; and a wide-band-gap intrinsic layer, which is located on the surface of the side of the bottom intrinsic layer that is away from the semiconductor substrate layer, the band gap of the wide-band-gap intrinsic layer being greater than the band gap of the bottom intrinsic layer. The band gap of a wide-band-gap intrinsic layer is larger, and when sunlight irradiates a heterojunction cell, photons, the energy of which is less than that of the band gap of the wide-band-gap intrinsic layer, cannot be subjected to parasitic absorption.

A method for preparing a solar cell includes: providing a carrier plate and a separation auxiliary layer, forming a perovskite absorption layer, having a first side facing away from the separation auxiliary layer and a second side opposite to the first side and including a bonding matrix and monocrystal perovskite particles, over the separation auxiliary layer away from the carrier plate, at least some of the monocrystal perovskite particles having first convex surfaces and second convex surfaces protruding from the bonding matrix on the first and second side respectively, and a functional layer formed over a respective monocrystal perovskite particle; forming a first carrier transport layer on the first side of the perovskite absorption layer; forming a first conductive layer over the first carrier transport layer; removing the carrier plate and the separation auxiliary layer, and forming a second conductive layer on the second side of the perovskite absorption layer.

A method for preparing a solar cell includes: providing a carrier plate and a separation auxiliary layer, forming a perovskite absorption layer, having a first side facing away from the separation auxiliary layer and a second side opposite to the first side and including a bonding matrix and monocrystal perovskite particles, over the separation auxiliary layer away from the carrier plate, at least some of the monocrystal perovskite particles having first convex surfaces and second convex surfaces protruding from the bonding matrix on the first and second side respectively, and a functional layer formed over a respective monocrystal perovskite particle; forming a first carrier transport layer on the first side of the perovskite absorption layer; forming a first conductive layer over the first carrier transport layer; removing the carrier plate and the separation auxiliary layer, and forming a second conductive layer on the second side of the perovskite absorption layer.

A solar cell and a photovoltaic module. The solar cell includes: a substrate including a front surface and a back surface, a tunneling layer formed on the back surface of the substrate, a doped conductive layer formed on the tunneling layer, an intrinsic polycrystalline silicon layer formed on the doped conductive layer, a first passivation layer formed on the intrinsic polycrystalline silicon layer, and a first electrode formed on the first passivation layer. The first electrode is in contact with the intrinsic polycrystalline silicon layer by running through the first passivation layer and is spaced apart from the tunneling layer. The photovoltaic module includes the solar cell.