This application discloses a photoreceptor, a panel, and a method for manufacturing a photoreceptor. The photoreceptor includes a photosensitive layer. The photosensitive layer includes a subject entity including a plurality of holes, and an object entity including at least two photosensitive materials whose photosensitive wavelength bands are different. The holes of the subject entity are filled with the photosensitive materials.

The present application provides a display panel and a display device. The display panel includes a plurality of light-sensing circuits and a position detection circuit. The plurality of light-sensing circuits are disposed in the display panel and are arranged in an array. Each of the plurality of light-sensing circuits includes a light-sensing transistor. The present application disposes a quantum dot layer, which can absorb interactive light and convert its light intensity signal into an electrical signal, and determines an irradiation position of the interactive light through the position detection circuit, so that an interaction with light with a longer wavelength can be realized.

An electromagnetic radiation detector includes an InP substrate having a first surface opposite a second surface; a first InGaAs electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths; a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths; a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; and an immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber.

An imaging device includes a plurality of light-receiving elements arranged in a two-dimensional matrix shape. Each of the light-receiving elements includes a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a laminated structure in which a first compound semiconductor layer having a first conductivity type and a second compound semiconductor layer having a second conductivity type that is a reverse conductivity type to the first conductivity type are laminated from a side of the first electrode. The second compound semiconductor layer has been removed in a region between the light-receiving elements. The first electrode and the first compound semiconductor layer are shared by the light-receiving elements. An impurity concentration of a first compound semiconductor layer near the first electrode is lower than that of a first compound semiconductor layer near the second compound semiconductor layer.

A photodetector comprising a contact layer; an absorbing region positioned such that light admitted passes into the absorbing region; a diffractive region comprising at least one diffractive element operating to diffract light into the absorbing region; the configuration of the photodetector being determined by computer simulation to determine an optimal diffractive region and absorbing region configuration for optimal quantum efficiency for at least one predetermined wavelength range, the diffractive region operating to diffract light entering through the contact layer such that phases of diffracted waves from locations within the photodetector including waves reflected by sidewalls and waves reflected by the diffractive elements form a constructive interference pattern inside the absorbing region. A method of designing a photodetector comprises using a computer simulation to determine an optimal configuration for at least one wavelength range occurring when waves reflected by the diffractive element form a constructive interference pattern inside the absorbing region.

Imaging apparatus (2000, 2100, 2200) includes a photosensitive medium (2004, 2204) and an array of pixel circuits (302), which are arranged in a regular grid on a semiconductor substrate (2002) and define respective pixels (2006, 2106) of the apparatus. Pixel electrodes (2012, 2112, 2212) are connected respectively to the pixel circuits in the array and coupled to read out photocharge from respective areas of the photosensitive medium to the pixel circuits. The pixel electrodes in a peripheral region of the array are spatially offset, relative to the regular grid, in respective directions away from a center of the array.

Methods, systems, and apparatus that filters noise within a signal collected by a detector assembly. The detector assembly includes a first semiconductor layer of a first type configured to receive a photon. The detector assembly includes a second semiconductor layer of a second type. The second semiconductor layer is formed above the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are configured to collect a signal. The detector assembly includes an interface layer including an insulator portion for filtering noise. The interface layer is formed on the second semiconductor layer. The detector assembly includes a metal contact layer formed on the interface layer. The interface layer is configured to capacitively couple the first semiconductor layer and second semiconductor layer with the metal contact layer.

An infrared photo-detector array and a method for manufacturing it are disclosed. The infrared photo-detector array contains a plurality of pyramid-shaped structures, a first light-absorbing material supporting the plurality of the pyramid-shaped structure, a carrier-selective electronic barrier supporting the first light-absorbing material, a second light-absorbing material supporting the carrier-selective electronic barrier, and a metal reflector supporting the second light-absorbing material, wherein the plurality of the pyramid shaped structures are disposed on the side of the photo-detector array facing the incident light to be detected and the metal reflector is disposed on the opposite side of the photo-detector array. The method disclosed teaches how to manufacture the infrared photo-detector array.

Provided is a semiconductor light detection device having a relatively high detection sensitivity to a light component of a specific wavelength. The semiconductor light detection device includes: a semiconductor light receiving element, in which a first conductive layer is formed on a surface of a semiconductor substrate, a second conductive layer is formed below the first conductive layer, a third conductive layer is formed below the second conductive layer, and a photocurrent based on the intensity of incident light is output from the third conductive layer while an input voltage is applied to the first conductive layer; and a semiconductor detection circuit configured to output an output voltage based on a current difference between a first photocurrent and a second photocurrent being output in response to the application of the first input voltage and the second input voltage, respectively.

Semiconductor structures including optically-transparent metamorphic buffer regions, devices employing such structures, and methods of fabrication. The optically-transparent metamorphic buffer is grown to provide a lattice constant transition between a smaller lattice constant and a larger lattice constant (or vice-versa), allowing materials with two different lattice constants to be monolithically integrated. Such buffer layer may include at least two elements from group V of the periodic table. The optically-transparent metamorphic buffer region may include digital-alloy superlattice structure (s) to confine material defects to the metamorphic buffer layer, and improve electrical properties of the metamorphic buffer layer, thereby improving the electronic properties of electronic devices such as optoelectronic devices and photovoltaic cells. Photonic devices such as solar cells and optical detectors containing such semiconductor structures.