A light emitting diode includes an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure; a p-contact layer formed on the p-type structure; and a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.

The problem of the present disclosure is to provide a photo sensor circuit that uses oxide semiconductor transistors and the operation of which is stable. The photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. Each of the photo transistor, the first switching transistor, and the second transistor includes an oxide semiconductor layer as a channel layer.

A sensor device provided in the disclosure includes a sensor substrate, a first transparent layer, a collimator layer, and a lens. The first transparent layer is disposed on the sensor substrate, wherein the first transparent layer defines an alignment structure. The collimator layer is disposed on the first transparent layer. The lens is disposed on the collimator layer.

A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

A photosensitive sensor, a manufacturing method thereof and a display panel are provided. The photosensitive sensor includes a first type semiconductor layer, an intrinsic semiconductor layer disposed on a side of the first type semiconductor layer, and a second type semiconductor layer disposed on a side of the intrinsic semiconductor layer away from the first type semiconductor layer. The intrinsic semiconductor layer is provided with metal particles capable of generating a surface plasmon effect. The metal particles are dispersely distributed in the intrinsic semiconductor layer.

The invention relates to an infrared-transmitting high-sensitivity visible light detector and its preparation method. The detector is composed of passivation layer (14), upper electrode (13), heterojunction (15), lower electrode (3), and intrinsic monocrystalline silicon substrate (2). The upper electrode (13) is the material that is electrically conductive and transparent to visible light and infrared light. The heterojunction (15) is divided into heterojunction upper layer (5) and heterojunction lower layer (4), wherein the upper heterojunction layer (5) is a nano film sensitive to visible light and capable of transmitting infrared ray, and the lower heterojunction layer (4) is intrinsic monocrystalline silicon. When visible light and infrared light pass through the upper electrode (13) and the heterojunction upper layer (5), the visible light excites electron-hole pairs in the heterojunction (15), which are collected by the upper and lower electrodes and flow out through longitudinally arranged metal columns, while infrared light passes through the whole detection structure, so that visible light can be detected without affecting infrared transmission. The distance between the electrode and the junction zone is very small, which can reduce the recombination rate of electron-hole pairs before reaching the electrode and improve the collection efficiency of photo-generated carriers. The structural design of longitudinal metal reduces light shielding and improves sensitivity.

A method of forming a high voltage optical transformer includes forming a via through a transparent carrier wafer, forming a conductive layer within the via, bonding a solid state lighting (SSL) package to a first side of the carrier wafer, and bonding a photovoltaic (PV) wafer to a second side of the carrier wafer opposite to the first side. The photovoltaic wafer may include an active area and a conductive area located outside of the active area that is in electrical contact with the conductive layer. The method further includes forming both an SSL contact with the solid state lighting package and a PV contact with the conductive layer on the same side of the carrier wafer.

A sensor device provided in the disclosure includes a sensor substrate, a first transparent layer, a collimator layer, and a lens. The first transparent layer is disposed on the sensor substrate, wherein the first transparent layer defines an alignment structure. The collimator layer is disposed on the first transparent layer. The lens is disposed on the collimator layer.

An avalanche photodiode (APD) sensor includes a photoelectric conversion region disposed in a substrate and that converts light incident to a first side of the substrate into electric charge, and a cathode region disposed at a second side of the substrate. The second side is opposite the first side. The APD sensor includes an anode region disposed at the second side of the substrate, a first region of a first conductivity type disposed in the substrate, and a second region of a second conductivity type disposed in the substrate. The second conductivity type is different than the first conductivity type. In a cross-sectional view, the first region and the second region are between the photoelectric conversion region and the second side of the substrate. In the cross-sectional view, an interface between the first region and the second region has an uneven pattern.

The invention relates to an infrared-transmitting high-sensitivity visible light detector and its preparation method. The detector is composed of passivation layer (14), upper electrode (13), heterojunction (15), lower electrode (3), and intrinsic monocrystalline silicon substrate (2). The upper electrode (13) is the material that is electrically conductive and transparent to visible light and infrared light. The heterojunction (15) is divided into heterojunction upper layer (5) and heterojunction lower layer (4), wherein the upper heterojunction layer (5) is a nano film sensitive to visible light and capable of transmitting infrared ray, and the lower heterojunction layer (4) is intrinsic monocrystalline silicon. When visible light and infrared light pass through the upper electrode (13) and the heterojunction upper layer (5), the visible light excites electron-hole pairs in the heterojunction (15), which are collected by the upper and lower electrodes and flow out through longitudinally arranged metal columns, while infrared light passes through the whole detection structure, so that visible light can be detected without affecting infrared transmission. The distance between the electrode and the junction zone is very small, which can reduce the recombination rate of electron-hole pairs before reaching the electrode and improve the collection efficiency of photo-generated carriers. The structural design of longitudinal metal reduces light shielding and improves sensitivity.