An optical sensor package includes a substrate, a wall disposed upon the substrate, and a cover layer disposed on the wall. The substrate, the wall, and the cover layer at least partially define a cavity. The optical sensor package also includes a sensor disposed upon the substrate within the cavity. A cloaking layer is disposed upon to the cover layer. The cloaking layer is transmissive to at least a portion of a light spectrum and is configured to at least partially conceal the sensor. In some examples, the optical sensor package also includes a light source disposed upon the substrate within another cavity at least partially defined by the wall and the cover layer.

A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

The present disclosure relates to a semiconductor device, an array substrate, and a method for fabricating the semiconductor device. The semiconductor device comprises a substrate, a thin film transistor formed on the substrate, and a first light detection structure adjacent to the thin film transistor, wherein the first light detection structure includes a first bottom electrode, a top electrode, and a first photo-sensing portion disposed between the first bottom electrode and the first top electrode, one of a source electrode and a drain electrode of the thin film transistor is disposed in the same layer as the first bottom electrode of the first light detection structure; the other of the source electrode and the drain electrode of the thin film transistor is used as the first top electrode.

A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

A detector for determining a position of at least one object, in particular for 3D-sensing concepts, is disclosed. The detector comprises a longitudinal optical sensor (110) for determining a longitudinal position of an object by a light beam traveling from the object to the detector and a transversal optical detector (112) which may be designed as an imaging device or a position sensitive detector. The longitudinal sensor (110) has at least two PN structures or PIN structures (138, 140). Each of the PN structures or PIN structures is located between two electrode layers (144), thereby forming photodiodes (146) having a longitudinal sensor region (148) each. Longitudinal sensor signals from the photodiodes (146) are, given the same total power of illumination, are dependent on a beam cross-section of the light beam in the longitudinal sensor regions (148). As an alternative, instead of the transversal optical detector (112) the photodiodes (146) of the longitudinal optical sensor (110) may be adapted to operate as one-dimensional position sensitive detectors each, for determining a transversal x-coordinate and a transversal y-coordinate, respectively.

A simple and still reliable detector for an accurate determination of a position of at least one object in space is provided. The detector comprises a longitudinal optical sensor (114) having a stack of at least two individual pin diodes (130, 130) arranged between at least two electrodes (132, 132). Upon illumination of the sensor region by an incident light beam (136), a longitudinal sensor signal is generated. The longitudinal sensor signal, given the same power of illumination, is dependent on a beam cross-section of the light beam (136). The at last two individual pin diodes (130, 130) have different spectral sensitivities in order to enable the determination of a distance between the object and the detector by light beams in different spectral ranges, e.g. by light beams in the visible spectral range and in the infrared spectral range.

The present disclosure relates to a semiconductor device, an array substrate, and a method for fabricating the semiconductor device. The semiconductor device comprises a substrate, a thin film transistor formed on the substrate, and a first light detection structure adjacent to the thin film transistor, wherein the first light detection structure includes a first bottom electrode, a top electrode, and a first photo-sensing portion disposed between the first bottom electrode and the first top electrode, one of a source electrode and a drain electrode of the thin film transistor is disposed in the same layer as the first bottom electrode of the first light detection structure; the other of the source electrode and the drain electrode of the thin film transistor is used as the first top electrode.

A sensor device provided in the disclosure includes a sensor substrate, a first transparent layer, a collimator layer, and a lens. The first transparent layer is disposed on the sensor substrate, wherein the first transparent layer defines an alignment structure. The collimator layer is disposed on the first transparent layer. The lens is disposed on the collimator layer.

A resonant cavity-enhanced infrared photodetector has an absorber layer disposed between a first transparent layer and a second transparent layer within an optical cavity. The first transparent layer and the second transparent layer have a bandgap which is larger by at least 0.1 eV compared to the absorber layer. Since the bandgaps of the first and second layer are increased relative to the bandgap of the absorber layer, generation of dark current is limited to the absorber layer. The band profiles of the layers had been designed in order to avoid carrier trapping. In one embodiment, the conduction and valence band offsets are configured to allow unimpeded flow of photogenerated charge carriers away from the absorber layer. The photodetector may be a photoconductor, or a photodiode having n-type and p-type layers. In some embodiments, an interface between the absorber layer and a transparent layer is compositionally graded. In other embodiments, one of a conduction band and a valence band of the absorber layer is aligned with an opposite band of a transparent layer so that a photogenerated charge carrier can tunnel from one band of the absorber layer into the opposite band of the transparent layer.

A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.