The invention relates to semiconductor devices for converting ionizing radiation into an electrical signal. The present ionizing radiation sensor has an n+-i-p+ structure, produced using the planar process. The sensor contains an i-region in the form of a high-resistivity substrate of high-purity float-zone silicon with p-type conductivity, having on its front face n+-regions (2, 3), an SiO2 layer (4), aluminium metallization (5), and a passivation layer. On the front face of the substrate (1) n-regions (2) are formed by ion implantation; a masking layer of SiO2 (layer 4) is grown; aluminium metallization (5) is deposited; and a passivation layer (6) is applied. At least one or more n+-regions (2) are situated in the central portion of the front face of the substrate and occupy most of the surface area, forming a sensitive zone of the sensor, and at least two n+-regions and two p+-regions are formed as annular elements (guard rings) (3), arranged concentrically in a non-sensitive zone along the periphery of the substrate (1), in order to reduce the amount of surface current and to provide for a smooth drop in potential from the sensitive region to the periphery of the device. The number of n+-regions (2) that form the matrix, i.e. the sensitive zone, of the sensor is equal to 2k, where k can be equal to 0one region. Ports (9) for connecting leads are situated around the edges of the substrate in its non-sensitive region. The n+-regions (2) which form the sensitive zone of the sensor have profiled portions along the edges in the form of a series of recesses (12).

The invention relates to semiconductor devices for converting ionizing radiation into an electrical signal. The present ionizing radiation sensor has an n+-i-p+ structure, produced using the planar process. The sensor contains an i-region in the form of a high-resistivity substrate of high-purity float-zone silicon with p-type conductivity, having on its front face n+-regions (2, 3), an SiO2 layer (4), aluminium metallization (5), and a passivation layer. On the front face of the substrate (1) n-regions (2) are formed by ion implantation; a masking layer of SiO2 (layer 4) is grown; aluminium metallization (5) is deposited; and a passivation layer (6) is applied. At least one or more n+-regions (2) are situated in the central portion of the front face of the substrate and occupy most of the surface area, forming a sensitive zone of the sensor, and at least two n+-regions and two p+-regions are formed as annular elements (guard rings) (3), arranged concentrically in a non-sensitive zone along the periphery of the substrate (1), in order to reduce the amount of surface current and to provide for a smooth drop in potential from the sensitive region to the periphery of the device. The number of n+-regions (2) that form the matrix, i.e. the sensitive zone, of the sensor is equal to 2k, where k can be equal to 0one region. Ports (9) for connecting leads are situated around the edges of the substrate in its non-sensitive region. The n+-regions (2) which form the sensitive zone of the sensor have profiled portions along the edges in the form of a series of recesses (12).

An array substrate for a digital X-ray detector and the digital X-ray detector including the same are disclosed. The array substrate effectively protects a PIN diode from external moisture or water, maximizes a light transmission region of a PIN diode, and reduces resistance by maximizing the region of a bias wiring. To this end, a closed-loop bias electrode formed to cover a circumferential surface of a PIN diode is used. In detail, the bias electrode includes a closed loop portion and a contact extension portion. The contact extension portion extends from one end of the closed loop portion so as to directly contact an upper electrode, and includes a hollow part therein.

An array substrate for a digital X-ray detector and the digital X-ray detector including the same are disclosed. The array substrate effectively protects a PIN diode from external moisture or water, maximizes a light transmission region of a PIN diode, and reduces resistance by maximizing the region of a bias wiring. To this end, a closed-loop bias electrode formed to cover a circumferential surface of a PIN diode is used. In detail, the bias electrode includes a closed loop portion and a contact extension portion. The contact extension portion extends from one end of the closed loop portion so as to directly contact an upper electrode, and includes a hollow part therein.

A nuclear microbattery is disclosed comprising: a radioactive material that emits photons or particles; and at least one diode comprising a semiconductor material arranged to receive and absorb photons or particles and generate electrical charge-carriers in response thereto, wherein said semiconductor material is a crystalline lattice structure comprising Aluminium, Indium and Phosphorus.

A nuclear microbattery is disclosed comprising: a radioactive material that emits photons or particles; and at least one diode comprising a semiconductor material arranged to receive and absorb photons or particles and generate electrical charge-carriers in response thereto, wherein said semiconductor material is a crystalline lattice structure comprising Aluminium, Indium and Phosphorus.

An array substrate for an X-ray detector and an X-ray detector including the reduces or minimizes a leakage current caused by etching of a PIN layer, and also reduces or minimizes light reaction of the PIN layer within a non-pixel region. The array substrate for the X-ray detector includes an integrated PIN layer formed to cover all pixel regions. Upper electrodes, which are spaced apart from each other according to individual pixel regions, are disposed over the PIN layer. A light shielding portion is disposed between neighboring upper electrodes.

An array substrate for an X-ray detector and an X-ray detector including the reduces or minimizes a leakage current caused by etching of a PIN layer, and also reduces or minimizes light reaction of the PIN layer within a non-pixel region. The array substrate for the X-ray detector includes an integrated PIN layer formed to cover all pixel regions. Upper electrodes, which are spaced apart from each other according to individual pixel regions, are disposed over the PIN layer. A light shielding portion is disposed between neighboring upper electrodes.

Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.

An off-leakage current of a photodiode is reduced in a photoelectric conversion device. A photoelectric conversion device (100) includes: an oxide semiconductor layer (5) provided on a substrate (1); a passivation film (6) and a planarizing film (7) which are stacked on the oxide semiconductor layer; and a photodiode (9) including a lower electrode (91), a photoelectric conversion layer (92), and an upper electrode (93). The lower electrode is connected to a source electrode (4) via a contact hole provided in the passivation film and the planarizing film. No photoelectric conversion layer is provided directly above the contact hole.