Silicon Particle Detector, comprising an absorption region (10) capable of generating electrical charges in response to a particle passing therethrough, a first and a second electrode (20, 30) arranged on opposite sides of the absorption region (10), wherein the first electrode (20) is segmented into a plurality of pads (20a), and a plurality of multiplication layers (40) able to avalanche-multiply the electric charges generated in the absorption region (10), each of the multiplication layers (40) being arranged beneath a respective pad (20a) and interposed between it and the absorption region (10), each multiplication layer (40) is surrounded by a respective protection ring (50) formed by the material of the pad (20a). The protection ring (50) is laterally interposed between the multiplication layer (40) and the absorption region (10).

Silicon Particle Detector, comprising an absorption region (10) capable of generating electrical charges in response to a particle passing therethrough, a first and a second electrode (20, 30) arranged on opposite sides of the absorption region (10), wherein the first electrode (20) is segmented into a plurality of pads (20a), and a plurality of multiplication layers (40) able to avalanche-multiply the electric charges generated in the absorption region (10), each of the multiplication layers (40) being arranged beneath a respective pad (20a) and interposed between it and the absorption region (10), each multiplication layer (40) is surrounded by a respective protection ring (50) formed by the material of the pad (20a). The protection ring (50) is laterally interposed between the multiplication layer (40) and the absorption region (10).

A system for measuring gamma spectroscopy of a neutron irradiated material includes a plurality of semiconductor sensors. Each of the semiconductor sensors includes a gamma ray receiving surface disposed above a Schottky layer in contact with an n-doped active layer. The receiving surface is configured to emit electrons upon irradiation by gamma rays. The receiving surface contacts an adjustable telescoping mount configured to adjust the distance between the receiving surface and the Schottky layer. The n-doped layer is fabricated to have a thickness designed to pass through electrons having greater than a defined energy. The combination of adjustable receiving surface and active layer thickness define a minimum and maximum energy response of each of the sensors. Multiple sensors may be integrated in an array in which each sensor has its own energy response. An array of such sensors can measure the gamma spectrum of a material irradiated with neutrons.

An integrated radiation sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second lateral bipolar junction transistors (BJTs) having opposite polarities. The first lateral BJT has a base that is electrically coupled to the sensing structure and is configured to generate an output signal indicative of a change in stored charge in the sensing structure. The second lateral BJT is configured to amplify the output signal of the first bipolar junction transistor. The first and second lateral BJTs, the sensing structure, and the substrate on which they are formed comprise a monolithic structure.

An integrated radiation sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second lateral bipolar junction transistors (BJTs) having opposite polarities. The first lateral BJT has a base that is electrically coupled to the sensing structure and is configured to generate an output signal indicative of a change in stored charge in the sensing structure. The second lateral BJT is configured to amplify the output signal of the first bipolar junction transistor. The first and second lateral BJTs, the sensing structure, and the substrate on which they are formed comprise a monolithic structure.

In various embodiments, an electronic device comprises, for example, at least one photosensitive layer and at least one carrier selective layer. Under one range of biases on the device, the photosensitive layer produces a photocurrent while illuminated. Under another range of biases on the device, the photosensitive does not produce a photocurrent while illuminated. A carrier selective layer expands the range of biases over which the photosensitive layer does not produce any photocurrent while illuminated. In various embodiments, an electronic device comprises, for example, at least one photosensitive layer and at least one carrier selective layer. Under a first range of biases on the device, the photosensitive layer is configured to collect a photocurrent while illuminated. Under a second range of biases on the device, the photosensitive layer is configured to collect at least M times lower photocurrent while illuminated compared to under the first range of biases.

In various embodiments, an electronic device comprises, for example, at least one photosensitive layer and at least one carrier selective layer. Under one range of biases on the device, the photosensitive layer produces a photocurrent while illuminated. Under another range of biases on the device, the photosensitive does not produce a photocurrent while illuminated. A carrier selective layer expands the range of biases over which the photosensitive layer does not produce any photocurrent while illuminated. In various embodiments, an electronic device comprises, for example, at least one photosensitive layer and at least one carrier selective layer. Under a first range of biases on the device, the photosensitive layer is configured to collect a photocurrent while illuminated. Under a second range of biases on the device, the photosensitive layer is configured to collect at least M times lower photocurrent while illuminated compared to under the first range of biases.

A semiconductor detector for detecting radiation comprises a first semiconductor part in which an electron and a hole are generated by incident radiation; a signal output electrode outputting a signal base on the electron or the hole; and a gettering part gettering impurities in the first semiconductor part. In addition, the semiconductor detector further comprises a second semiconductor part doped with a type of dopant impurities and having dopant impurity concentration higher than that of the first semiconductor part. The second semiconductor part is in contact with the first semiconductor part. The gettering part is in contact with the second semiconductor part and not in contact with the first semiconductor part.

A semiconductor detector for detecting radiation comprises a first semiconductor part in which an electron and a hole are generated by incident radiation; a signal output electrode outputting a signal base on the electron or the hole; and a gettering part gettering impurities in the first semiconductor part. In addition, the semiconductor detector further comprises a second semiconductor part doped with a type of dopant impurities and having dopant impurity concentration higher than that of the first semiconductor part. The second semiconductor part is in contact with the first semiconductor part. The gettering part is in contact with the second semiconductor part and not in contact with the first semiconductor part.

A system for measuring gamma spectroscopy of a neutron irradiated material includes a plurality of semiconductor sensors. Each of the semiconductor sensors includes a gamma ray receiving surface disposed above a Shottky layer in contact with an n-doped active layer. The receiving surface is configured to emit electrons upon irradiation by gamma rays. The receiving surface contacts an adjustable telescoping mount configured to adjust the distance between the receiving surface and the Shottky layer. The n-doped layer is fabricated to have a thickness designed to pass through electrons having greater than a defined energy. The combination of adjustable receiving surface and active layer thickness define a minimum and maximum energy response of each of the sensors. Multiple sensors may be integrated in an array in which each sensor has its own energy response. An array of such sensors can measure the gamma spectrum of a material irradiated with neutrons.