A neutron beam detecting device according to the invention includes: a first solar cell-type detector that is provided with, on a surface thereof, a conversion film for converting neutrons into photons or any charged particle beam among alpha particles, protons, lithium nuclei, gamma rays or beta rays, and generates a current in response to incident radiation; a radiation detector that generates a current insensitive to neutrons as an output signal in response to the radiation incident; a current measuring device that detects, as signals, the current generated by the first solar cell-type detector and the current generated by the radiation detector in response to the incident radiation; and a flux calculating unit that compares the current signals from the detectors which are detected by the current measuring device. The flux calculating unit associates the detected current signals from the solar cell-type detector and the radiation detector with a relation between a flux of incident radiation of a predetermined type obtained in advance and the detected currents from the solar cell-type detector and the radiation detector, and calculates a flux of a neutron beam.

A neutron beam detecting device according to the invention includes: a first solar cell-type detector that is provided with, on a surface thereof, a conversion film for converting neutrons into photons or any charged particle beam among alpha particles, protons, lithium nuclei, gamma rays or beta rays, and generates a current in response to incident radiation; a radiation detector that generates a current insensitive to neutrons as an output signal in response to the radiation incident; a current measuring device that detects, as signals, the current generated by the first solar cell-type detector and the current generated by the radiation detector in response to the incident radiation; and a flux calculating unit that compares the current signals from the detectors which are detected by the current measuring device. The flux calculating unit associates the detected current signals from the solar cell-type detector and the radiation detector with a relation between a flux of incident radiation of a predetermined type obtained in advance and the detected currents from the solar cell-type detector and the radiation detector, and calculates a flux of a neutron beam.

There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.

There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.

An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component includes a silicon photomultiplier for: measuring the intensity of the light signal received by the component, and outputting a measurement signal that is indicative of the light intensity of the received light signal. The component is characterised by a comparator circuit: having a first input section, a second input section and an output section, and operatively connected to the silicon photomultiplier via its first input section.

A solid state detector for ionizing radiation having a semiconductor substrate, a conductive metal layer, a first and a second active region, the first active region having a faster response time to ionizing radiation than the second active region. A first voltage is applied to the first active region and a second voltage applied to the second active region, the first and second voltages having opposite polarities and equal magnitudes. The solid state detector being configured to maintain a constant output voltage when not irradiated and to output an output voltage when irradiated, the output voltage being the time resolved sum of a first charge and a second charge accumulated by the two active regions, the first charge and the second charge having opposite polarities and configured to drain residual charges from the active regions.

An integrated radiation sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second lateral bipolar junction transistors (BJTs) having opposite polarities. The first lateral BJT has a base that is electrically coupled to the sensing structure and is configured to generate an output signal indicative of a change in stored charge in the sensing structure. The second lateral BJT is configured to amplify the output signal of the first bipolar junction transistor. The first and second lateral BJTs, the sensing structure, and the substrate on which they are formed comprise a monolithic structure.

In various embodiments, an electronic device comprises, for example, at least one photosensitive layer and at least one carrier selective layer. Under one range of biases on the device, the photosensitive layer produces a photocurrent while illuminated. Under another range of biases on the device, the photosensitive does not produce a photocurrent while illuminated. A carrier selective layer expands the range of biases over which the photosensitive layer does not produce any photocurrent while illuminated. In various embodiments, an electronic device comprises, for example, at least one photosensitive layer and at least one carrier selective layer. Under a first range of biases on the device, the photosensitive layer is configured to collect a photocurrent while illuminated. Under a second range of biases on the device, the photosensitive layer is configured to collect at least M times lower photocurrent while illuminated compared to under the first range of biases.

A semiconductor detector for detecting radiation comprises a first semiconductor part in which an electron and a hole are generated by incident radiation; a signal output electrode outputting a signal base on the electron or the hole; and a gettering part gettering impurities in the first semiconductor part. In addition, the semiconductor detector further comprises a second semiconductor part doped with a type of dopant impurities and having dopant impurity concentration higher than that of the first semiconductor part. The second semiconductor part is in contact with the first semiconductor part. The gettering part is in contact with the second semiconductor part and not in contact with the first semiconductor part.

The present invention is a photodiode or photodiode array having improved ruggedness for a shallow junction photodiode which is typically used in the detection of short wavelengths of light. In one embodiment, the photodiode has a relatively deep, lightly-doped P zone underneath a P+ layer. By moving the shallow junction to a deeper junction in a range of 2-5 m below the photodiode surface, the improved device has improved ruggedness, is less prone to degradation, and has an improved linear current.