An integrated circuit is formed by removing a sacrificial gate dielectric layer and a sacrificial gate to form a gate cavity. A conformal dielectric first liner is formed in the gate cavity and a conformal second liner is formed on the first liner. A first etch removes the second liner from the bottom of the gate cavity, leaving material of the second liner on sidewalls of the gate cavity. A second etch removes the first liner from the bottom of the gate cavity exposed by the second liner, leaving material of the first liner on the bottom of the gate cavity under the second liner on the sidewalls of the gate cavity. A third etch removes the second liner from the gate cavity, leaving an L-shaped spacers of the first liner in the gate cavity. A permanent gate dielectric layer and replacement gate are formed in the gate cavity.

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

The present disclosure relates to semiconductor structures and, more particularly, to a self-aligned deep contact for a vertical field effect transistor (VFET) and methods of manufacture. The structure includes a plurality of fin structures, a first contact landing on a substrate material between a first set of fin structures of the plurality of fin structures, sidewalls of the first contact being in direct contact with an insulator material of the first set of the fin structures, and a second contact landing on a work function material between a second set of fin structures of the plurality of fin structures, sidewalls of the second contact being in direct contact with the insulator material of the second set of the fin structures.

A method includes applying a first voltage to a source of a first transistor of a detector unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detector unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detector unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

A semiconductor device at least one first transistor of a first type disposed above a substrate and comprising a channel wider in one cross-section than tall, wherein the first type is a PFET transistor or an NFET transistor; and at least one second transistor of a second type disposed above the at least one first transistor and comprising a channel taller in the one cross-section than wide, wherein the second type is a PFET transistor or an NFET transistor, and the second type is different from the first type. Methods and systems for forming the semiconductor structure.

A diode and a transistor are connected in parallel. The transistor is located on a first doped region forming a PN junction of the diode with a second doped region located under the first region. The circuit functions as an ionizing radiation detection cell by generating a current through the PN junction which changes by a voltage generated across the transistor. This change in voltage is compared to a threshold to detect the ionizing radiation.

A method of forming a radiation detector includes forming a stack including a plurality of arrays of radiation detection devices. Forming an array of the plurality of arrays includes forming a polysilicon layer over an interlayer dielectric layer of another array of the plurality of arrays; forming charge storage layers over the polysilicon layer; forming a second polysilicon layer over the charge storage layers; etching the second polysilicon layer to form gate stacks; and depositing an interlayer dielectric disposed on at least three sides of the gate stacks, the interlayer dielectric including a radiation reactive material.

A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation. A non-radiation influenced threshold voltage shift may be measured and used in determining whether each logical pair of exposed sensor cells is influenced by radiation exposure.

A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.