An optoelectronic device is specified, with a radiation-emitting semiconductor chip configured to generate electromagnetic radiation, and an active element configured to change a physical state, wherein the active element is embedded in a component of the component, and the physical change of state comprises the following: temperature change, sound generation, mechanical motion.

An optoelectronic device is specified, with a radiation-emitting semiconductor chip configured to generate electromagnetic radiation, and an active element configured to change a physical state, wherein the active element is embedded in a component of the component, and the physical change of state comprises the following: temperature change, sound generation, mechanical motion.

An image sensor is disclosed which includes a substrate, a pixel array, a peripheral circuit, an SPAD detector and a VCSEL integrated in the substrate. The peripheral circuit is configured to process an electrical signal obtained from photoelectric conversion in the pixel array, the SPAD detector is configured to convert a first external optical pulse into an electrical pulse to provide a clock signal to the peripheral circuit. The VCSEL is driven by the peripheral circuit and configured to output a second optical pulse. The number of electrical connection terminals in the image sensor is reduced to only two, which is favorable to the miniaturization of the image sensor and simplifies the design of the mating device while allowing the inputting of a first optical pulse and outputting of a second optical pulse. By using these optical signals, extremely high speed and high bandwidth data transmission can be achieved.

A method of producing an optical sensor at wafer-level, comprising the steps of providing a wafer having a main top surface and a main back surface and arrange at or near the top surface of the wafer at least one first integrated circuit having at least one light sensitive component. Furthermore, providing in the wafer at least one through-substrate via for electrically contacting the top surface and back surface and forming a first mold structure by wafer-level molding a first mold material over the top surface of the wafer, such that the first mold structure at least partly encloses the first integrated circuit. Finally, forming a second mold structure by wafer-level molding a second mold material over the first mold structure, such that the second mold structure at least partly encloses the first mold structure.

A photoelectric sensor capable of saving a space is provided. A photoelectric sensor includes a case body with a substantially rectangular parallelepiped shape that accommodates at least one of a light projecting section and a light receiving section. The case body has a front surface that has a light projecting and receiving surface that allows at least one of light from the light projecting section and light to the light receiving section to pass therethrough and a rear surface that is located on a side opposite to the front surface, and a cable that accommodates cords that are connected to at least one of the light projecting section and the light receiving section via a control section is attached to the rear surface.

A photoelectric sensor capable of saving a space is provided. A photoelectric sensor includes a case body with a substantially rectangular parallelepiped shape that accommodates at least one of a light projecting section and a light receiving section. The case body has a front surface that has a light projecting and receiving surface that allows at least one of light from the light projecting section and light to the light receiving section to pass therethrough and a rear surface that is located on a side opposite to the front surface, and a cable that accommodates cords that are connected to at least one of the light projecting section and the light receiving section via a control section is attached to the rear surface.

A light emitting device includes an n-type AlGaN structure, a p-type AlGaN structure, and a light-emitting active-region sandwiched between the n-type AlGaN structure and the p-type AlGaN structure. A first p-contact is formed on the p-type AlGaN structure defining a light-emitting structure, a second p-contact is formed on the p-type AlGaN structure defining a light-detecting structure, and an n-contact is formed on the n-type AlGaN structure serving as a common cathode for the light-emitting structure and the light-detecting structure. There is a bridge zone between the first and the second p-contacts and the p-type AlGaN structure in the bridge zone is not removed.

An electronic device may include an array of pixels. Each pixel may include a first single photon avalanche photodiode circuit that generates a first output signal on a first conductive line, a second avalanche photodiode circuit that generates a second output signal on a second conductive line, and a logic NAND gate having a first input coupled to the first conductive line, a second input coupled to the second conductive line, and an output coupled to an output line. The logic NAND gate may generate a third output signal based on the first and second output signals that is independent of dark current generated by the avalanche photodiodes. The third output signal may be processed to generate range values that are further processed to generate three-dimensional images of a scene.

An electronic device may include an array of pixels. Each pixel may include a first single photon avalanche photodiode circuit that generates a first output signal on a first conductive line, a second avalanche photodiode circuit that generates a second output signal on a second conductive line, and a logic NAND gate having a first input coupled to the first conductive line, a second input coupled to the second conductive line, and an output coupled to an output line. The logic NAND gate may generate a third output signal based on the first and second output signals that is independent of dark current generated by the avalanche photodiodes. The third output signal may be processed to generate range values that are further processed to generate three-dimensional images of a scene.

The object of the present invention is to provide an ultraviolet-emitting device which achieves suppresses deterioration, and prolonged life of the components used in a light-emitting device while monitoring a light emitting state of the light-emitting element and maintaining an emission intensity. The ultraviolet-emitting device is provided with a light-emitting element configured to emit an ultraviolet ray, a mounting board on which the light-emitting element is placed, and a fluorescent glass element placed at a position irradiated with the ultraviolet ray emitted by the light-emitting element, and placed in a through hole formed through the mounting board, emitting fluorescence in a visible range by excitation of an ultraviolet ray.