An optical coupling device includes a first lead frame, a second lead frame, a first mounting member, a second mounting member, the members respectively provided on the first lead frame and, the second lead frame a light emitter provided on the first mounting member, a light receiver provided on the second mounting member, a first wire and a second wire electrically connecting the light emitter to the first lead frame, and the light receiver to the second lead frame, and an outer resin enclosure enclosing a part of the first lead frame and the second lead frame, the light emitter, and the light receiver, wherein at least the light emitter and the light receiver in the outer resin enclosure are covered with a silicone resin cured material.

A high-voltage optical transformer may include (1) an array of light-emitting devices that are connected in parallel with one another and are electrically coupled to an electrical input, (2) a transfer medium, and (3) an array of photovoltaic cells that (A) are optically coupled to the array of light-emitting devices via the transfer medium, (B) are connected in series with one another, and (C) produce an electrical output whose voltage is higher than the electrical input. Various other apparatuses, systems, and methods are also disclosed.

A photoelectric conversion device includes a first photoelectric conversion portion configured to generate electrons; a second photoelectric conversion portion configured to generate holes; a charge-to-voltage conversion portion including an n-type first semiconductor region configured to collect the generated electrons and a p-type second semiconductor region configured to collect the generated holes, the charge-to-voltage conversion portion being configured to convert a charge that is based on the electrons and the holes to a voltage; and a signal generation portion configured to generate a signal corresponding to the voltage, the signal generation portion including an amplification transistor.

An infrared (IR) sensor and a method of detecting molecular species in a liquid. In one embodiment, the IR sensor includes: (1) an IR light source configured to emit IR light, (2) a sensing element configured to receive the IR light, the IR light generating an evanescent field about the sensing element as the IR light propagates therethrough, molecules in a subject liquid interacting with the evanescent field and affecting a characteristic of the IR light and (3) an IR light detector configured to receive the IR light from the sensing element and detect the characteristic.

A semiconductor relay includes: a light-emitting element; and a light-receiving element facing the light-emitting element. The light-receiving element includes: a substrate; a semiconductor layer having a direct transition type, the semiconductor layer being disposed on the substrate and having a semi-insulating property; a first electrode having at least a part in contact with the semiconductor layer; and a second electrode having at least a part in contact with either one of the semiconductor layer and the substrate, in a position separated from the first electrode. The semiconductor layer is reduced in resistance by absorbing light from the light-emitting element.

An infrared (IR) sensor and a method of detecting molecular species in a liquid. In one embodiment, the IR sensor includes: (1) an IR light source configured to emit IR light, (2) a sensing element configured to receive the IR light, the IR light generating an evanescent field about the sensing element as the IR light propagates therethrough, molecules in a subject liquid interacting with the evanescent field and affecting a characteristic of the IR light and (3) an IR light detector configured to receive the IR light from the sensing element and detect the characteristic.

A light emitting device including: a light emitting element; a molded resin portion configured to seal at least a portion of the light emitting element; a temperature information acquiring unit configured to acquire temperature information; a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light emitting element and the temperature information; and a controlling unit configured to control the light emitting element, based on the temperature information and the humidity information.

A power electronics assembly includes a cooling chip having a first subassembly and a second subassembly. The cooling chip includes a first metallization layer and a second metallization layer on a portion of a first surface of the cooling chip, an inlet through a second surface of the cooling chip opposite to the first surface, an outlet through the second surface, and one or more micro-channels extending between and fluidly coupled to the inlet and the outlet. The first subassembly includes a light source coupled to a first electrode and the first metallization layer, which provides a second electrode. The light source is configured to receive an electrical signal and operable to produce light in response to the electrical signal. The second subassembly includes one or more wide band gap semiconductor photonic cores acting as an electric switch positioned to receive the light produced by the light source.

An electro-optically triggered power switch is disclosed utilizing a wide bandgap, high purity III-nitride semiconductor material such as BN, AlN, GaN, InN and their compounds. The device is electro-optically triggered using a laser diode operating at a wavelength of 10 to 50 nanometers off the material's bandgap, and at a power level of 10 to 100 times less than that required in a conventionally triggered device. The disclosed device may be configured as a high power RF MOSFET, IGBT, FET, or HEMT that can be electro-optically controlled using photons rather than an electrical signal. Electro-optic control lowers the power losses in the semiconductor device, decreases the turn-on time, and simplifies the drive signal requirements. It also allows the power devices to be operated from the millisecond to the sub-picosecond timeframe, thus allowing the power device to be operated at RF frequencies (i.e., kilohertz to terahertz range) and at high temperatures where the bandgap changes with temperature.

A cover for an electronic circuit package, including an element having peripheral portions housed in an inner groove of a through opening.