Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter (SSE) at the surface of the support. The SSE can emit a first light propagating along a plurality of first vectors. The SSL device can further include a converter material over at least a portion of the SSE. The converter material can emit a second light propagating along a plurality of second vectors. Additionally, the SSL device can include a lens over the SSE and the converter material. The lens can include a plurality of diffusion features that change the direction of the first light and the second light such that the first and second lights blend together as they exit the lens. The SSL device can emit a substantially uniform color of light.

A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.

A monolithic display device including a plurality of first pixels capable of emitting light in a first wavelength range, and a plurality of second pixels capable of emitting light in a second wavelength range, the first pixels each including a gallium nitride light-emitting diode, and the second pixels each including an organic light-emitting diode.

A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.

A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

A method for manufacturing a light emitting element includes: forming a semiconductor structure on a first substrate; providing a second substrate configured to be bonded above a side of the semiconductor structure opposite the first substrate; forming a metal layer above at least one of (i) a side of the semiconductor structure opposite the first substrate, and/or (ii) a side of the second substrate that is to be located closer to the semiconductor structure; bonding the second substrate above the semiconductor structure via a bonding member; removing the first substrate from the semiconductor structure to obtain a bonded body in which the second substrate is bonded above the semiconductor structure; and singulating the bonded body.

A method of manufacturing a light-emitting element includes: providing a wafer including: a substrate, and a semiconductor structure; forming a plurality of modified regions inside the substrate of the wafer by irradiating the substrate with a laser beam; and separating the wafer into a plurality of light-emitting elements after said irradiating the substrate with the laser beam. Said forming the plurality of modified regions includes: scanning the laser beam along a plurality of first lines, the plurality of first lines extending in a first direction and being arranged in a second direction, the first direction being parallel to the first surface, the second direction intersecting the first direction and being parallel to the first surface, and scanning the laser beam along a plurality of second lines, the plurality of second lines extending in the second direction and being arranged in the first direction.

A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 110.sup.4 cm.sup.2 or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 m250 m in the first main plan is 110.sup.6 cm.sup.2 or less.

By using chip-by-chip, mainly separation technology, micro LED can be made very accurately and efficiently. First, after epitaxial process, the LED epi-wafer is processed into micro LEDs. Second, bonding substrates with driving circuits are provided for the LED epi-wafer. Then, each LED chip is fastened to the substrate chip-by-chip simultaneously or sequentially, and each LED chip may be transferred by using separation technology simultaneously or sequentially. The LED epi-wafer per se can be also provided as LED display substrate.

A thin film, flexible optoelectronic device is described. In an aspect, a method for fabricating a single junction optoelectronic device includes forming a p-n structure on a substrate, the p-n structure including a semiconductor having a lattice constant that matches a lattice constant of substrate, the semiconductor including a dilute nitride, and the single-junction optoelectronic device including the p-n structure; and separating the single-junction optoelectronic device from the substrate. The dilute nitride includes one or more of GaInNAs, GaInNAsSb, alloys thereof, or derivatives thereof.