A luminous panel includes a substrate having electric connections and an array of microchips secured to the substrate and connected to the electric connections in order to be driven. Each microchip includes control circuit based on transistors formed in a silicon volume, the circuit being connected to the substrate connections, and a micro-LED secured to the control circuit and connected thereto in order to be controlled.

An optoelectronic device (50) comprising a semiconductor body (10a, 10b, 10c) having an optically active region (12), a carrier (60), and a pair of connection layers (30a, 30b, 30c) having a first connection layer (32) and a second connection layer (34), wherein: the semiconductor body is disposed on the carrier, the first connection layer is disposed between the semiconductor body and the carrier and is connected to the semiconductor body, the second connection layer is disposed between the first connection layer and the carrier, at least one layer selected from the first connection layer and the second connection layer contains a radiation-permeable and electrically conductive oxide, and the first connection layer and the second connection layer are directly connected to each other at least in regions in one or more bonding regions, so that the pair of connection layers is involved in the mechanical connection of the semiconductor body to the carrier. A production process is also specified.

The present disclosure provides an ultraviolet LED epitaxial production method and an ultraviolet LED, where the method includes: pre-introducing a metal source and a group-V reactant on a substrate, to form a buffer layer through decomposition at a first temperature; growing an N-doped AlwGa1-wN layer on the buffer layer at a second temperature; growing a multi-section LED structure on the N-doped AlwGa1-wN layer at a third temperature, wherein a number of sections of the multi-section LED structure is in a range of 2 to 50; and each section of the LED structure comprises an AlxGa1-xN/AlyGa1-yN multi-quantum well structure and a P-doped AlmGa1-mN layer, and the multi-section LED structure emits light of one or more wavelengths, which realizes that a single ultraviolet LED emits ultraviolet light of different wavelengths, thereby improving the luminous efficiency of the ultraviolet LED.

The present invention relates to an LED display device and a method for manufacturing the same. A manufacturing method, according to one embodiment of the present invention, comprises the steps of: growing a semiconductor layer on a growth substrate; forming an LED element in an asymmetrical shape from which the semiconductor layer is separated; separating the LED element from the growth substrate; forming a bonding electrode, to which the LED element is bonded, on a display substrate comprising a TFT; forming a groove by patterning the display substrate in the same shape as the LED element formed asymmetrically; seating the LED element in a pattern having the groove in the same shape as the LED element by means of a physical force; and electrically connecting by the bonding electrode of the display substrate or an adhesive conductive material formed on a bonding electrode of the LED element.

Provided is a deep ultraviolet LED with a design wavelength , including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength . The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.

A thin-film manufacturing method, a thin-film manufacturing apparatus, a manufacturing method for a photoelectric conversion element, a manufacturing method for a logic circuit, a manufacturing method for a light-emitting element, and a manufacturing method for a light control element with which number-of-layers control and laminating and film-forming of different kinds of materials is described. A thin-film manufacturing method according to the present technology includes bringing an electrically conductive film-forming target into contact with a first terminal and a second terminal, heating a first region that is a region of the film-forming target between the first terminal and the second terminal by applying voltage between the first terminal and the second terminal, supplying a film-forming raw material to the first region; and forming a thin film in the first region by controlling reaction time such that a thin film having a desired number of layers is formed.

A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 /sq or less.

Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

A device comprising a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is disclosed. The device comprises a porous region. The device comprises a first layer disposed between the light emitting layer and the porous region. The device comprises a mask layer disposed between the porous region and the first layer. The device comprises a plurality of openings formed in the mask layer.