A method includes forming a first n-type nitride semiconductor layer; forming a first light-emitting layer on the first n-type nitride semiconductor layer; forming a first nitride semiconductor layer on the first light-emitting layer by introducing a gas comprising gallium and having a first flow rate; forming a first p-type nitride semiconductor layer on the first nitride semiconductor layer; forming an n-type intermediate layer on the first p-type nitride semiconductor layer; forming a second n-type nitride semiconductor layer on the n-type intermediate layer; forming a second light-emitting layer on the second n-type nitride semiconductor layer; forming a second nitride semiconductor layer on the second light-emitting layer by introducing a gas comprising gallium and having a second flow rate; and forming a second p-type nitride semiconductor layer on the second nitride semiconductor layer. The first flow rate is less than the second flow rate.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

A method of forming a light emitting structure, the light emitting structure comprising: a first light emitting region configured to emit light having a first primary peak wavelength; a second light emitting region configured to emit light having a second primary peak wavelength, wherein the first primary peak wavelength is different to the second primary peak wavelength; and a partially reflective layer positioned at least partially between the first light emitting region and the second light emitting region, wherein the partially reflective layer is configured to reflect light having the first primary peak wavelength emitted by the first light emitting region and allow light having the second primary peak wavelength emitted by the second light emitting region to pass through the partially reflective layer.

An optical device includes a multilayered GaAs structure including a plurality of sublayers and an optical structure layer on the multilayered GaAs structure, the optical structure layer including a Group III-V compound semiconductor material. The optical structure layer may be, for example, a light-emitting layer having a multi-quantum well structure.

Embodiments described herein comprise micro light emitting diodes (LEDs) and methods of forming such micro LEDs. In an embodiment, a nanowire LED comprises a nanowire core that includes GaN, an active layer shell around the nanowire core, where the active layer shell includes InGaN, a cladding layer shell around the active layer shell, where the cladding layer comprises p-type GaN, a conductive layer over the cladding layer, and a spacer surrounding the conductive layer. In an embodiment, a refractive index of the spacer is less than a refractive index of the cladding layer shell.

A light emitting device for a display including a first LED stack configured to generate light having a first peak wavelength, a second LED stack disposed under the first LED stack, and configured to generate light having a second peak wavelength, a third LED stack disposed under the second LED stack, and configured to generate light having a third peak wavelength, and a floating reflection layer disposed over the first LED stack, and configured to reflect light having the first peak wavelength, in which the first peak wavelength is longer than the second and third peak wavelengths.

The forming of the tunnel junction layer includes forming a first n-type layer, forming a second n-type layer by introducing a first raw material gas into a furnace at a first temperature, the first raw material gas including a first gas having a first flow rate, and forming a third n-type layer by introducing a second raw material gas into a furnace at a second temperature, the second raw material gas including a second gas having a second flow rate, the second temperature being less than the first temperature. A first flow rate ratio of the first gas in the first raw material gas is greater than a second flow rate ratio of the second gas in the second raw material gas.

A light-emitting device includes a laminate provided at a substrate, a first electrode provided on an opposite side of the laminate from the substrate, and a second electrode provided on an opposite side of the first electrode from the substrate. The laminate includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is provided between the substrate and the light-emitting layer. The first electrode constitutes a plurality of column portions. The second electrode is coupled to the plurality of column portions. The first electrode is a transparent electrode formed of a metal oxide transmitting light generated at the light-emitting layer.

A semiconductor light emitting element for a display device can include a semiconductor light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a light extraction structure disposed on top of the second conductivity type semiconductor layer of the semiconductor light emitting structure, in which the light extraction structure includes a plurality of organic protrusions protruding in a vertical direction of the second conductivity type semiconductor layer; and a surface roughness pattern formed on at least a portion of a top surface of the second conductivity type semiconductor layer, and at least one of the plurality of organic protrusions contains nanoparticles positioned at an end of the at least one of the plurality of organic protrusions and an organic component supporting the nanoparticles.

A method for local removal of semiconductor wires (SW) including the following steps: —Provide a stack of layers including at least a substrate, a nucleation layer, a growth masking layer, and a layer including SW being grown from the nucleation layer through the growth masking layer, —Encapsulate the SW with an encapsulation layer so as to form a composite layer including SW and encapsulating material, —Pattern a hard mask on the composite layer, so as to expose regions of the composite layer, —Perform anisotropic etching of the composite layer in the exposed regions, the anisotropic etching having a selectivity S.sub.semicon:S.sub.encaps between semiconductor-based material and encapsulating material such as 0.9:1<S.sub.semicon:S.sub.encaps<1.1:1.