A monolithic optoelectronic integrated circuit is provided, including: a substrate including photonic integrated device region and a peripheral circuit region; a first GaN-based multi-quantum well optoelectronic PN-junction device including a first P-type ohmic contact electrode and a first N-type ohmic contact electrode; and a first GaN-based field-effect transistor, where the first GaN-based field-effect transistor includes a first gate dielectric layer disposed on the surface of the substrate and having a first recess, a first gate filled within the first recess, and a first source and a first drain that are disposed the opposite sides of the first gate, where the first source is electrically connected to the first P-type ohmic contact electrode, the first drain is configured to be electrically connected to a first potential.

A group-III-nitride structure and a manufacturing method thereof are provided. In the manufacturing method, a first mask layer is first formed on a substrate; an uncoalesced second group-III-nitride epitaxial layer is formed by performing a first epitaxial growth with the first mask layer as a mask; and a second mask layer is formed at least on the second group-III-nitride epitaxial layer; a third group-III-nitride epitaxial layer is laterally grown and formed by performing a second epitaxial growth on the second group-III-nitride epitaxial layer with the second mask layer as a mask, where the second group-III-nitride epitaxial layer is coalesced by the third group-III-nitride epitaxial layer; a fourth group-III-nitride epitaxial layer is formed by performing a third epitaxial growth on the third group-III-nitride epitaxial layer.

A method for manufacturing a light-emitting element, includes: introducing a gas comprising gallium, an ammonia gas, and a gas comprising a p-type impurity to a reactor and forming a first p-type nitride semiconductor layer on a first light-emitting layer in a state in which the reactor has been heated to a first temperature; introducing an ammonia gas at a first flow rate and a nitrogen gas to the reactor in a state in which the reactor is held at the first temperature; and subsequently introducing a gas comprising gallium, an ammonia gas at a second flow rate, and a gas comprising an n-type impurity to the reactor, and forming a second n-type nitride semiconductor layer on the first p-type nitride semiconductor layer. The first flow rate is less than the second flow rate.

A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.

A method of manufacturing a light emitting element includes: forming a first n-type semiconductor layer containing an n-type impurity; forming, on the first n-type semiconductor layer, a first superlattice layer, which is grown at a first growth temperature; forming, on the first superlattice layer, a first light emitting layer; forming, on the first light emitting layer, a first p-type semiconductor layer containing a p-type impurity; forming, on the first p-type semiconductor layer, a tunnel junction part; forming, on the tunnel junction part, a second n-type semiconductor layer containing an n-type impurity; forming, on the second n-type semiconductor layer, a second superlattice layer, which is grown at a second growth temperature lower than the first growth temperature; forming, on the second superlattice layer, a second light emitting layer; and forming, on the second light emitting layer, a second p-type semiconductor layer containing a p-type impurity.

A method for manufacturing a light-emitting element includes: forming a first light-emitting part comprising a first n-type semiconductor layer, a first active layer on the first n-type semiconductor layer, and a first p-type semiconductor layer on the first active layer; forming an intermediate layer on the first light-emitting part; and forming a second light-emitting part on the intermediate layer, the second light-emitting part comprising a second n-type semiconductor layer, a second active layer on the second n-type semiconductor layer, and a second p-type semiconductor layer on the second active layer.

A device that includes a metal(III)-polar III-nitride substrate having a first surface opposite a second surface, a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface, a p-type III-nitride layer formed directly on the tunnel junction, and a number of material layers; a first material layer formed on the p-type III-nitride layer, each subsequent layer disposed on a preceding layer, where one layer from the number of material layers is patterned into a structure, that one layer being a III-nitride layer. Methods for forming the device are also disclosed.

A transfer-printable (e.g., micro-transfer-printable) device source wafer comprises a growth substrate comprising a growth material, a plurality of device structures comprising one or more device materials different from the growth material, the device structures disposed on and laterally spaced apart over the growth substrate, each device structure comprising a device, and a patterned dissociation interface disposed between each device structure of the plurality of device structures and the growth substrate. The growth material is more transparent to a desired frequency of electromagnetic radiation than at least one of the one or more device materials. The patterned dissociation interface has one or more areas of relatively greater adhesion each defining an anchor between the growth substrate and a device structure of the plurality of device structures and one or more dissociated areas of relatively lesser adhesion between the growth substrate and the device structure of the plurality of device structures.

A microdevice structure comprising at least part of an edge of a microdevice is covered with a metal-insulator-semiconductor (MIS) structure, wherein the MIS structure comprises a MIS dielectric layer and a MIS gate conductive layer, at least one gate pad provided to the MIS gate conductive layer, and at least one micro device contact extended upwardly on a top surface of the micro device.

Micro light-emitting diode (LED) displays, and fabrication and assembly of micro LED displays, are described. In an example, a pixel element for a micro-light emitting diode (LED) display panel includes a blue color nanowire or nanopyramid LED above a first nucleation layer above a substrate, the blue color nanowire or nanopyramid LED including a first GaN core. A green color nanowire or nanopyramid LED is above a second nucleation layer above the substrate, the green color nanowire or nanopyramid LED including a second GaN core. A red color nanowire or nanopyramid LED is above a third nucleation layer above the substrate, the red color nanowire or nanopyramid LED including a GaInP core.